化学学报 ›› 2017, Vol. 75 ›› Issue (3): 271-279.DOI: 10.6023/A16100552 上一篇    下一篇

综述

基于二维材料的III族氮化物外延

谭晓宇, 杨少延, 李辉杰   

  1. 中国科学院半导体研究所 半导体材料科学重点实验室 北京 100083
  • 收稿日期:2016-10-17 修回日期:2017-01-21 出版日期:2017-03-15 发布日期:2017-02-13
  • 通讯作者: 杨少延,E-mail:sh-yyang@semi.ac.cn,Tel.:010-82304968;李辉杰,E-mail:hjli2009@semi.ac.cn,Tel.:010-82304968 E-mail:sh-yyang@semi.ac.cn;hjli2009@semi.ac.cn
  • 作者简介:谭晓宇,中国科学院半导体研究所2016级在读博士生,研究方向为宽禁带半导体的可控制备;杨少延,中国科学院半导体所,研究员.主要从事宽禁带和超宽禁带半导体的材料、器件及物理研究;李辉杰,中国科学院半导体研究所,助理研究员.研究方向为氮化物的材料生长及器件制备.
  • 基金资助:

    项目受国家自然科学基金(Nos.61504128,61504129,61274041和11275228)、国家高技术研究发展计划(863计划)项目(Nos.2014AA032609和2015AA016801)、国家重点研发计划(No.2016YFB0400601)以及广东省科技计划项目(No.2014B010119002)资助.

Epitaxy of III-Nitrides Based on Two-Dimensional Materials

Tan Xiaoyu, Yang Shaoyan, Li Huijie   

  1. Institute of Semiconductors, Chinese Academy of Sciences, Key Laboratory of Semiconductor Materials Science, Beijing 100083
  • Received:2016-10-17 Revised:2017-01-21 Online:2017-03-15 Published:2017-02-13
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Nos. 61504128, 61504129, 61274041, and 11275228), the 863 High Technology R&D Program of China (Nos. 2014AA032609 and 2015AA016801), National Key Research and Development Plan (No. 2016YFB0400601), and the Guangdong Provincial Scientific and Technologic Planning Program (No. 2014B010119002).

III族氮化物合金因其宽广的可调能隙和优良的光电性能,在照明、电力电子、通讯、能源等领域有巨大优势,促使其材料制备技术不断发展.如何解决III族氮化物异质外延过程中晶格及热胀失配对材料质量的影响,是当前的研究重点.近年来,二维材料作为一类新兴材料受到了极大的关注.借助二维材料层间弱键合的特性,有望降低III族氮化物的制备成本、提高晶体质量,并实现柔性器件的制备,从而将其应用领域拓宽至可穿戴器件、可折叠器件等.本文综述了近年来国内外在二维材料上制备III族氮化物的研究报道,介绍了石墨烯、六方氮化硼、过渡金属硫族化物等二维材料上制备氮化物的各种尝试和成果,总结了二维材料上III族氮化物制备的特点,并对其未来发展趋势做了展望.

关键词: 氮化镓, 石墨烯, 六方氮化硼, 过渡金属硫族化物

III-nitrides have attracted huge interest from commercial market of lighting, power electronics and communications due to their unique optoelectronic properties, while their further enlargement is hampered by the limited crystal quality resulting from current heterogeneous epitaxy techniques. Recently, the exotic properties of layered two-dimensional materials have caught wide attention. The weak van der Waals interaction between the layers of two dimensional materials may help III-nitrides improving the crystal quality by relieving mismatching between lattice and thermal expansion, reducing costs of preparation by reusing expensive substrate, and realizing the fabrication of flexible devices, which will facilitates their generalization in wearable and foldable applications. This review present a comprehensive summary on the recent progress in regard of the III-nitride synthesis on the two-dimensional materials, including graphene, hexagonal boron nitride and transition metal dichalcogenides. Various attempts and their results are presented. Two important aspects in the preparation of GaN and AlN on two-dimensional materials are presented, which are the nucleation on defects and the lateral overgrowth of the nitride islands. A detailed knowledge on the nucleation and lateral overgrowth mechanism and precise controlling on the density and distribution of defects are indispensable for the ultimate realization of this route. The challenges and opportunities are also discussed.

Key words: gallium nitride, graphene, hexagonal boron nitride, transition metal dichalcogenides