化学学报 ›› 1990, Vol. 48 ›› Issue (6): 561-565. 上一篇    下一篇

研究论文

交流电方法用于单晶n-CdTe光电极性能的研究

范钦柏;邓薰南   

  1. 上海科学技术大学化学系
  • 出版日期:1990-06-15 发布日期:1990-06-15

The characterization of single-crystal n-CdTe photoelectrodes by the alternate current methods

FAN QINBAI;DENG XUNNAN   

  • Online:1990-06-15 Published:1990-06-15

本文应用循环伏安法研究了n型碲化镉单晶电极的光致腐蚀行为; 并运用PAR M368电化学阻抗系统测得了此电极在不同电位下的交流复阻抗图, 估算了此电极表面态密度及其它参数。实验结果表明, n-CdTe/液体结具有Sehottky结的特征, 此电极的Fermi能级可能有"钉扎"现象。

关键词: 单晶, 交流电路, 碲化镉, 阻抗测量, 半导体电极, 光刻, 循环伏安法, 光电极

The photocorrosion behavior of n-CdTe electrodes was investigated by cyclic voltammetry measurement. By using PAR M368 electrochem. impedance system, the impedance diagrams of this electrode at different potentials were determine The surface state d. and other factors are estimated The experimental results show that n-CdTe/liq. junction has the characteristics of a Schottky junction and that the Fermi level of the electrode may be pinned.

Key words: SINGLE CRYSTALS, ALTERNATING CURRENT CIRCUITS, CADMIUM TELLURIDE, IMPEDANCE MEASUREMENTS, SEMICONDUCTOR ELECTRODE, PHOTOETCHING, CYCLOVOLTAMGRAPH, PHOTOELECTROD

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