化学学报 ›› 2011, Vol. 69 ›› Issue (20): 2471-2478. 上一篇    下一篇

研究论文

NiO@SnO2@Zn2TiO4@TiO2同轴四层纳米电缆的制备、表征及形成机理研究

宋超,董相廷*,王进贤,刘桂霞   

  1. (长春理工大学化学与环境工程学院 长春 130022)
  • 收稿日期:2011-01-03 修回日期:2011-05-23 出版日期:2011-10-28 发布日期:2011-06-20
  • 通讯作者: 董相廷 E-mail:dongxiangting888@yahoo.com.cn
  • 基金资助:

    国家自然科学基金

Preparation, Characterization and Formation Mechanism of NiO@SnO2@Zn2TiO4@TiO2 Coaxial Tetralayered Nanocables by Electrospinning

SONG Chao, DONG Xiang-Ting, WANG Jin-Xian, LIU Gui-Xia   

  1. (School of Chemistry and Environmental Engineering, Changchun University of Science and Technology, Changchun 130022)
  • Received:2011-01-03 Revised:2011-05-23 Online:2011-10-28 Published:2011-06-20
  • Contact: XiangTing Dong E-mail:dongxiangting888@yahoo.com.cn

采用静电纺丝技术, 通过改进实验装置, 在最佳的纺丝条件下制备了[Ni(CH3COO)2+PVP]@[SnCl4+PVP]@[Zn(CH3COO)2+PVP]@[Ti(OC4H9)4+CH3COOH+PVP]前驱体复合电缆, 将其进行热处理, 制备出NiO@ SnO2@Zn2TiO4@TiO2同轴四层纳米电缆. 采用热重-差热(TG-DTA)、X射线衍射(XRD)、傅立叶变换红外光谱(FTIR)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)等分析技术对样品进行了表征. 结果表明, 所得产物为同轴四层纳米电缆, 芯层为NiO, 直径为35~55 nm|第二层为SnO2, 厚度为30~50 nm|第三层为Zn2TiO4, 厚度为25~40 nm|壳层为TiO2, 厚度为40~90 nm. 对同轴四层纳米电缆的形成机理进行了探讨.

关键词: NiO@SnO2@Zn2TiO4@TiO2, 同轴四层纳米电缆, 静电纺丝技术, 形成机理

[Ni(CH3COO)2+PVP]@[SnCl4+PVP]@[Zn(CH3COO)2+PVP]@[Ti(OC4H9)4+CH3COOH+PVP] precursor composite cables have been fabricated through modified electrospinning equipment via electrospinning technique. NiO@SnO2@Zn2TiO4@TiO2 coaxial tetralayered nanocables were obtained by calcination of the relevant precursor composite cables. The samples were characterized by thermogravimetric-differential thermal analysis (TG-DTA), X-ray diffractometry (XRD), fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Results showed that the samples are coaxial tetralayered nanocables. The core layer is NiO, and its diameter is ca. 35~55 nm. The second layer is SnO2, and its thickness is 30~50 nm. The third layer is Zn2TiO4, and its thickness is 25~40 nm. The outer layer is TiO2, and its thickness is 40~90 nm. Formation mechanism of coaxial tetralayered nanocables was discussed.

Key words: NiO@SnO2@Zn2TiO4@TiO2, coaxial tetralayered nanocables, electrospinning, formation mechanism

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