化学学报 ›› 1980, Vol. 38 ›› Issue (6): 529-534. 上一篇    下一篇

论文

痕量碲在金膜电极上阳极溶出伏安法的研究

邓家祺, 何佩鑫, 陈晓明   

  1. 复旦大学化学系 上海
  • 收稿日期:1978-12-18 出版日期:1980-11-15 发布日期:2013-06-03

A STUDY OF ANODIC STRIPPING VOLTAMMETRY OF TRACE TELLURIUM ON GOLD FILM ELECTRODE

DENG JIA-QI, HE PEI-XING, CHEN XIAO-MING   

  1. Department of Chemistry, Fudan University, Shanghai
  • Received:1978-12-18 Online:1980-11-15 Published:2013-06-03

本文报道了痕量碲在玻璃态石墨电极为基体的金膜电极上的阳极溶出伏安法。在0.1M高氯酸介质中于+0.65伏左右得到一个碲的溶出峰,峰面积与碲浓度在1.0×10-9M~5.0×10-6M范围内有良好的线性关系。定量下限达1.0×10-9M,相当于0.13ppb,成为目前碲的分析中最灵敏的方法之一。本文并用三角波周期伏安法观察了电极反应过程,证明电极反应属不可逆反应,并认为碲在电极上的浓集可能是由于形成了碲-的金属间化合物。

This paper reports the anodio stripping voltammetry of trace amount of tellurium on a gold film which is deposited on a glassy graphite electrode.In 0.1M perohlorio acid medium,a peak of stripping current of tellurium appears at +0.55~+0.65 V(va.N Ag/AgCl).It shows a linear relation between the peak area and the conoentrsficu of tellurium in the range of 1.010-9M to 5.0×10-6M.This method is one of the moat sensitive methods for the determination of tellurium.Furthermore,we have studied the electrode process with the triangle cyclic valtrammetry.It shows that the electrod.reaction is irreversible and it is possible that the deposition of tellurium on the gold film electrode results in the formation of an intermetallio compound between tellurium and gold.Arsenic seems to behave similarly.