Acta Chimica Sinica ›› 2012, Vol. 70 ›› Issue (10): 1221-1226.DOI: 10.6023/A12030013 Previous Articles     Next Articles

Full Papers


谢云龙, 钟国, 杜高辉   

  1. 浙江师范大学物理化学研究所 先进催化材料省部共建教育部重点实验室 金华 321004
  • 投稿日期:2012-03-17 修回日期:2012-05-01 发布日期:2012-05-07
  • 通讯作者: 杜高辉
  • 基金资助:

    国家自然科学基金(No. 10904129)和教育部新世纪优秀人才支持计划(NCET-11-1081)资助项目.

Preparation and Characterization of ZnS and ZnS/ZnO Heterostructure Nanowire by Chemical Vapor Deposition

Xie Yunlong, Zhong Guo, Du Gaohui   

  1. Key laboratory of the Ministry of Education for Advanced Catalysis Material, Institute of Physical Chemistry, Zhejiang Normal University, Jinhua 321004
  • Received:2012-03-17 Revised:2012-05-01 Published:2012-05-07
  • Supported by:

    This work was supported by the National Natural Science Foundation of China (No. 10904129) and the Program for New Century Excellent Talents in University of Ministry of Education of China (NCET-11-1081).

This paper presents a rapid preparation of large amounts of ZnS nanowires and ZnS/ZnO heterostructure nanowires by chemical vapor deposition based on graphite reduction. The mixtures of ZnS and graphite powder with weight ratio of 3:1 were placed in a quartz boat, and the quartz boat was positioned at the center of a quartz tube furnace. A Si substrate coated with gold nanoparticles was placed at 5 cm downstream of carrying gas flow from ZnS source. Under a constant nitrogen flow rate of 100 sccm, the furnace was elevated to 870-935 °C at a pressure of 15-20 Torr. After reaction for 5-30 min, the Si substrate was taken out of the furnace after it was cooled down to room temperature, and the ZnS nanowires were grown on the substrate. Moreover, the superlattice and biaxial ZnS/ZnO heterostructure nanowires can be produced using the mixtures of ZnS, ZnO, and graphite with weight ratio of 1.5:1.5:1 as raw materials with a reaction temperature of 935-970 °C. The cable-like ZnS/ZnO heterostructure nanowires can be obtained by annealing the obtained ZnS nanowires in nitrogen at 700 °C for 2 h. The as-grown products have been characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence. The as-grown ZnS nanowires contain Wurtzite and Zinc blende structures, and the nanowires are tens of micrometers in length and 20-50 nm in diameter with high yield. To the best of our knowledge, it is the first report concerning the ZnO superstructure found in the as-gown biaxial ZnS/ZnO heterostructures. The HRTEM analysis shows ZB-ZnS(111) // ZnO(0001) in the superlattice heterojunctions and W-ZnS(0001) // ZnO(0001) in the cable-like heterojunctions. The three crystal planes are all polar planes, and they are parallel to each other in the ZnS/ZnO heterojunctions. The growth mechanism of ZnS and ZnS/ZnO heterostructure nanowires has been discussed. Their photoluminescence properties have been analyzed, and they all show broad green emission band.

Key words: ZnS, ZnO, Heterostructure nanowire, Growth mechanism, Interface