Acta Chimica Sinica ›› 2012, Vol. 70 ›› Issue (21): 2197-2207.DOI: 10.6023/A12070398 Previous Articles     Next Articles

Review

SiC衬底上石墨烯的性质、改性及应用研究

方楠, 刘风, 刘小瑞, 廖瑞娴, 缪灵, 江建军   

  1. 华中科技大学 光学与电子信息学院 武汉 430074
  • 收稿日期:2012-07-09 出版日期:2012-11-14 发布日期:2012-09-12
  • 通讯作者: 缪灵 E-mail:miaoling@hust.edu.cn

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Fang Nan, Liu Feng, Liu Xiaorui, Liao Ruixian, Miao Ling, Jiang Jianjun   

  1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
  • Received:2012-07-09 Online:2012-11-14 Published:2012-09-12

It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few- layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and Ion/Ioff ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Key words: graphene, substract, SiC, modification, epitaxy