Acta Chimica Sinica ›› 2012, Vol. 70 ›› Issue (10): 1173-1178.DOI: 10.6023/A1110103 Previous Articles     Next Articles

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电沉积Bi2Te3 基薄膜的电化学阻抗谱研究

林青含a, 邱丽琴a, 程璇a,b, 周健a   

  1. a 厦门大学材料学院材料科学与工程系 厦门 361005;
    b 福建省特种先进材料重点实验室 厦门 361005
  • 投稿日期:2011-10-10 修回日期:2012-03-07 发布日期:2012-05-28
  • 通讯作者: 程璇, 周健 E-mail:xcheng@xmu.edu.cn
  • 基金资助:

    福建省特种先进材料重点实验室基金(No. 2006L2003).

Electrochemical Impedance Spectroscopic Study of Electrodeposited Bi2Te3-based Thin Films

Lin Qinghana, Qiu Liqina, Cheng Xuana,b, Zhou Jiana   

  1. a Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361005;
    b Fujian Key Laboratory of Advanced Materials, Xiamen University, Xiamen 361005
  • Received:2011-10-10 Revised:2012-03-07 Published:2012-05-28
  • Supported by:

    Project supported by the Fujian Key Laboratory of Advanced Materials, China (No. 2006L2003).

The Bi2Te3-based thin films have been prepared by electrochemical deposition on stainless-steel substrates. The microstructure and composition of the films were studied by X-ray diffraction (XRD) and electron probe microanalysis (EPMA). The deposition mechanisms of Bi2Te3 thin films on stainless-steel substrates were preliminary investigated using electrochemical impedance spectroscopy (EIS). The results showed that the similar deposition mechanisms were obtained for Bi-Te binary and Bi-Te-Se ternary systems, i.e., the Bi3+, HTeO2+ and H2SeO3 were electrochemically reduced to form simple substances Bi(0), Te(0) and Se(0), respectively, then the Bi2Te3-based compounds were formed by reacting Te(0) or Se(0) with Bi(0). For Bi-Sb-Te ternary system, the HTeO2+ was first electrochemically reduced to form simple substance Te(0), and then the Bi2Te3-based compounds were formed by reacting Te(0) with Bi3+ and Sb(III). The deposition processes were controlled by electrochemical polarization.

Key words: Bi2Te3, electrochemical impedance spectroscopy, electrodeposition