Acta Chimica Sinica ›› 2004, Vol. 62 ›› Issue (19): 1948-1950. Previous Articles     Next Articles

不同疏水基表面活性剂溶剂化的电子结构特征

颜肖慈1, 罗明道1, 曾晖1, 张高勇1,2   

  1. 1. 武汉大学化学与分子科学学院, 武汉, 430072;
    2. 中国日用化学工业研究院, 太原, 030001
  • 投稿日期:2003-11-01 修回日期:2004-05-30 发布日期:2014-02-17
  • 通讯作者: 颜肖慈,E-mail:YXC0008@163.com;Fax:027-87647617. E-mail:YXC0008@163.com
  • 基金资助:
    国家重大基础(973)预研基金(No.2001CCC01300)资助项目.

Study on Characters of Electronic Structures for Anionic Surfactants with Different Hydrophobic Bases in Gas and Solvent Using Onsager Model and ab initio Method

YAN Xiao-Ci1, LUO Ming-Dao1, ZENG Hui1, ZHANG Gao-Yong1,2   

  1. 1. College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072;
    2. China Research Institute of Daily Chemical Industry, Taiyuan 030001
  • Received:2003-11-01 Revised:2004-05-30 Published:2014-02-17

The geometries of the anionic surfactants with different hydrophobic bases in gas and water were optimized using RHF/6-31G* and Onsager reaction field model, respectively. The total energies, net charges, dipole moments and polarization energies of the surface-active anions were obtained in gas and water. The characters of geometries and electronic structures for the surface-active anions in gas and water were compared. The effect of the different hydrophobic bases on the surface tension was also investigated.

Key words: anionic surfactant with different hydrophobic base, ab initio, Onsager model, surfactant tension