Application of Low Temperature Atomic Layer Deposition Packaging Technology in OLED and Its Implications for Organic and Perovskite Solar Cell Packaging

doi:10.6023/A21110513

Acta Chimica Sinica ›› 2022, Vol. 80 ›› Issue (3): 395-422.DOI: 10.6023/A21110513 Previous Articles

Review

低温原子层沉积封装技术在OLED上的应用及对有机、钙钛矿太阳能电池封装的启示

周静^a, 田雪迎^a^,^b, 王斌凯^a^,^b, 张沙沙^c, 刘宗豪^a^,^*(), 陈炜^a^,^*()

a 华中科技大学武汉国家光电研究中心武汉 430074
b 华中科技大学中欧清洁与可再生能源学院武汉 430074
c 郑州大学河南先进技术研究院郑州 450001

投稿日期:2021-11-12 发布日期:2022-01-10
通讯作者: 刘宗豪, 陈炜

作者简介:

周静, 2018年于中国地质大学(武汉)获应用化学系理学士学位.目前是华中科技大学武汉国家光电研究中心2018级博士研究生, 主要研究方向为反式钙钛矿太阳能电池的稳定性研究.

田雪迎, 2019年于济南大学新能源科学与工程学院获理学士学位. 目前是华中科技大学中欧清洁与可再生能源学院2019级硕士研究生, 主要研究方向为钙钛矿太阳能电池的封装和长期稳定性研究.

王斌凯, 2019年于河北大学质量技术监督学院获管理学学士学位. 目前是华中科技大学中欧清洁与可再生能源学院2019级硕士研究生, 主要研究方向为大面积钙钛矿太阳能电池的刮涂及模组制备研究.

刘宗豪, 副教授, 2011年于华中科技大学获理学士学位, 2016年于华中科技大学获博士学位. 2015年在美国洛杉矶加利福尼亚州访学交流. 2016至2017年在北京大学做研究助理. 2017至2019年在日本冲绳理工大学研究生院做博士后. 目前是华中科技大学武汉国家光电研究中心副教授, 主要从事有机无机杂化钙钛矿光电器件性能研究.

陈炜, 教授, 于清华大学材料科学与工程系获硕士和博士学位. 2008年2010年于香港科技大学化学系做博士后. 2014年至2015年于日本国际材料化学协会做访问学者. 目前是华中科技大学武汉国家光电研究中心教授, 主要从事纳米材料的合成、基础研究和应用以及新型太阳能电池(包括钙钛矿太阳能电池)半导体薄膜的研究.

基金资助:
国家自然科学基金(51672094); 国家自然科学基金(51861145404); 国家自然科学基金(51822203); 国家自然科学基金(52002140); 国家自然科学基金(21401167); 华中科技大学自主创新研究计划基金(2018KFYRCPY003); 华中科技大学自主创新研究计划基金(2020kfyXJJS008); 湖北省自然科学基金(ZRMS2020001132); 深圳科技改革委员会(JCYJ20180507182257563)

Application of Low Temperature Atomic Layer Deposition Packaging Technology in OLED and Its Implications for Organic and Perovskite Solar Cell Packaging

Jing Zhou^a, Xueying Tian^a^,^b, Binkai Wang^a^,^b, Shasha Zhang^c, Zonghao Liu^a(), Wei Chen^a()

a Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
b China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan 430074, China
c Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou 450001, China

Received:2021-11-12 Published:2022-01-10
Contact: Zonghao Liu, Wei Chen
Supported by:
National Natural Science Foundation of China(51672094); National Natural Science Foundation of China(51861145404); National Natural Science Foundation of China(51822203); National Natural Science Foundation of China(52002140); National Natural Science Foundation of China(21401167); Self-determined and Innovative Research Funds of HUST(2018KFYRCPY003); Self-determined and Innovative Research Funds of HUST(2020kfyXJJS008); Natural Science Foundation of Hubei Province(ZRMS2020001132); Shenzhen Science and Technology Innovation Committee(JCYJ20180507182257563)

Organic semiconductor optoelectronic devices have made rapid development and progress in both research and industrial applications. The related directions have become a mature and emerging field. However, the organic materials in such devices usually are extremely sensitive to water vapor or oxygen existed in ambient air, which seriously affects the long-term stability of the devices. In addition to interface engineering, selecting appropriate charge (holes or electrons) transport layers and interfacial materials to improve the water and oxygen tolerance of the device and packing the device with robust encapsulation are all effective strategies to isolate the device from the water and oxygen in ambient air. Among various encapsulation technologies, atomic layer deposition (ALD) is an almost perfect encapsulation approach, which could deposit thin films in the layer-by-layer growth mode at low-temperature, with the characteristics of accurate and controllable thickness, high repeatability, excellent uniformity and high density. These characteristics make ALD to be widely used in semiconductor industry. Here, we review the progress of the applications of the ALD encapsulation techniques in organic light emitting diode (OLED) and provide further discussions on the enlightening significance of ALD encapsulation techniques in organic photovoltaics (OPV) and perovskite solar cell (PSC) encapsulations.

Key words: atomic layer deposition, organic light emitting diode, organic photovoltaics, perovskite solar cells, encapsulation

Cite this article

Jing Zhou, Xueying Tian, Binkai Wang, Shasha Zhang, Zonghao Liu, Wei Chen. Application of Low Temperature Atomic Layer Deposition Packaging Technology in OLED and Its Implications for Organic and Perovskite Solar Cell Packaging[J]. Acta Chimica Sinica, 2022, 80(3): 395-422.

Export EndNote|Reference Manager|ProCite|BibTeX|RefWorks

share this article

Fig. & Tab. 15

Figure 1. The schematic diagram of three different ALD processes (take ALD-Al2O3 as an example)

Figure 2. The schematic diagram of S-ALD processes (take ALD-Al2O3 as an example)

Figure 3. (a) Optical microscope image of an OLED working at a luminance of 100 cd/m2 under water vapor atmosphere. Non-emitting dark spots can clearly be seen. Reproduced with permission from ref. [64]. Copyright 2001, WILEY-VCH. (b) Oxidation mechanism of the P3HT alkyl side chain. Reproduced with permission from ref. [73]. Copyright 2009, Elsevier Ltd. (c) Schematic representation of the outer aluminum electrode showing the two different entrance channels for water and molecular oxygen. The molecular oxygen mainly diffuses through microscopic pinholes and water mainly diffuses in between the aluminum grains. Reproduced with permission from ref. [76]. Copyright 2012, John Wiley & Sons, Inc. (d) Factors inducing instability in perovskite solar cells can be classiﬁed as external, i.e., temperature, moisture, oxygen, light (including UV light) and electric ﬁeld, and internal. Reproduced with permission from ref. [78]. Copyright 2017, Elsevier Ltd.

Deposition temp./℃	Structure	Thickness/nm	dyads	Test temp./℃	Test temp. RH%	WVTR/ (g•m^-2•d^-1)	Bending radius/ cm	Bending cycle	WVTR change after bending/%	Ref.
80	Al₂O₃	25	1	85	85	4.50×10^-4	1.5	1000	374%	^[85]
80	Al₂O₃/cyclohexane-plasma polymer/Al₂O₃	12.5/100/12.5	1	85	85	2.70×10^-4	1.5	1000	101%	^[85]
80	Al₂O₃/Li(acac)/Al₂O₃	12.5/100/12.5	1	85	85	1.50×10^-4	1.5	1000	131%	^[85]
80	Al₂O₃/TiMO/ Al₂O₃	12.5/100/12.5	1	85	85	1.70×10^-4	1.5	1000	137%	^[85]
120	Al₂O₃/HfO₂	2/2	9	38	100	6.00×10^-6	—	—	—	^[86]
300	Al₂O₃/HfO₂	2/2	5	38	100	5.00×10^-6	—	—	—	^[86]
80	Al₂O₃/ 4MP	3/0.6	3.5	r.t.	r.t.	2.32×10^-7	—	—	—	^[87]
80	Al₂O₃	50	1	85	85	3.10×10^-4	—	—	—	^[88]
90	Al₂O₃/alucone	15/2.5	5.5	25	60	1.44×10^-4	—	—	—	^[89]
80	SAM/Al₂O₃/Ag	40/8	1	38	100	5.00×10^-5	—	—	—	^[90]
80	Al₂O₃/15% C Al₂O₃	6.7/2.5	5	85	85	3.20×10^-4	1.5	1000	186%	^[91]
60	parylene C/Al₂O₃	30/500	3	38	100	5.00×10^-5	—	—	—	^[92]
80	AMO / CYTOP	100/2000	1	60	100	1.05×10^-6	—	—	—	^[93]
80	SAOLs/Al₂O₃	10.4/20.1	5	r.t./25	r.t./40	2.99×10^-7	—	—	—	^[94]
80	SAOLs/Al₂O₃	10.4/20.1	5	85	85	1.58×10^-3	—	—	—	^[94]
40	Al₂O₃	100	1	85	85	1.84×10^-3	—	—	—	^[95]
80	ZrO₂	80	1	20	60	6.09×10^-4	—	—	—	^[84]
40	Al₂O₃	100	1	37.8	100	9.20×10^-7	—	—	—	^[95]
70	Al₂O₃/ZnO	3/3	5	30	90	4.92×10^-4	—	—	—	^[96]
70	(Al₂O₃/ZnO nano-stratified stack)/S-H nanocomposite	30/120	2.5	30	90	1.91×10^-5	3	1000	212%	^[96]
100	Al₂O₃/ZrO₂	10/10	5	50	50	3.97×10^-4	—	—	—	^[97]
80	AlOx/plasma polymer	1/20	20	85	85	3.00×10^-4	0.5	10000	≈100%	^[98]
80	Al₂O₃/TiO₂	5/5	8	85	85	2.10×10^-5	—	—	—	^[99]
60	Al₂O₃/ZnO	2/2	9	38	100	1.00×10^-6	—	—	—	^[100]
50	Al₂O₃/HfO₂	2/2	9	38	100	3.50×10^-6	—	—	—	^[100]
80	Al₂O₃/MgO	0.082/1.01	50/10	60	100	4.70×10^-6	—	—	—	^[101]
75	SiO₂	70	1	37.8	100	7.73×10^-3	—	—	—	^[80]
85	MgO/S-H nanocomposite	40/200	4.5	30	90	4.33×10^-6	—	—	—	^[102]
80	NOA63/ZrO₂/NOA63	16000/85/16000	1	20	50	9.00×10^-5	—	—	—	^[103]
80	ZrO₂/NOA63	28/16000	2	20	60	1.27×10^-4	—	—	—	^[104]
80	ZrO₂/zircone	4/1	15	20	60	3.078×10^-5	—	—	—	^[105]
70	ZnO/Al₂O₃/MgO	20/12/10	6	30	90	2.06×10^-6	0.5	—	10^-6	^[106]
70	Al₂O₃/S-H nanocomposite	60/2000	3	30	90	1.11×10^-6	1	100	—	^[107]

Deposition temp./℃	Structure	Thickness/nm	dyads	Test temp./℃	Test temp. RH%	WVTR/ (g•m^-2•d^-1)	Bending radius/ cm	Bending cycle	WVTR change after bending/%	Ref.
80	Al₂O₃	25	1	85	85	4.50×10^-4	1.5	1000	374%	^[85]
80	Al₂O₃/cyclohexane-plasma polymer/Al₂O₃	12.5/100/12.5	1	85	85	2.70×10^-4	1.5	1000	101%	^[85]
80	Al₂O₃/Li(acac)/Al₂O₃	12.5/100/12.5	1	85	85	1.50×10^-4	1.5	1000	131%	^[85]
80	Al₂O₃/TiMO/ Al₂O₃	12.5/100/12.5	1	85	85	1.70×10^-4	1.5	1000	137%	^[85]
120	Al₂O₃/HfO₂	2/2	9	38	100	6.00×10^-6	—	—	—	^[86]
300	Al₂O₃/HfO₂	2/2	5	38	100	5.00×10^-6	—	—	—	^[86]
80	Al₂O₃/ 4MP	3/0.6	3.5	r.t.	r.t.	2.32×10^-7	—	—	—	^[87]
80	Al₂O₃	50	1	85	85	3.10×10^-4	—	—	—	^[88]
90	Al₂O₃/alucone	15/2.5	5.5	25	60	1.44×10^-4	—	—	—	^[89]
80	SAM/Al₂O₃/Ag	40/8	1	38	100	5.00×10^-5	—	—	—	^[90]
80	Al₂O₃/15% C Al₂O₃	6.7/2.5	5	85	85	3.20×10^-4	1.5	1000	186%	^[91]
60	parylene C/Al₂O₃	30/500	3	38	100	5.00×10^-5	—	—	—	^[92]
80	AMO / CYTOP	100/2000	1	60	100	1.05×10^-6	—	—	—	^[93]
80	SAOLs/Al₂O₃	10.4/20.1	5	r.t./25	r.t./40	2.99×10^-7	—	—	—	^[94]
80	SAOLs/Al₂O₃	10.4/20.1	5	85	85	1.58×10^-3	—	—	—	^[94]
40	Al₂O₃	100	1	85	85	1.84×10^-3	—	—	—	^[95]
80	ZrO₂	80	1	20	60	6.09×10^-4	—	—	—	^[84]
40	Al₂O₃	100	1	37.8	100	9.20×10^-7	—	—	—	^[95]
70	Al₂O₃/ZnO	3/3	5	30	90	4.92×10^-4	—	—	—	^[96]
70	(Al₂O₃/ZnO nano-stratified stack)/S-H nanocomposite	30/120	2.5	30	90	1.91×10^-5	3	1000	212%	^[96]
100	Al₂O₃/ZrO₂	10/10	5	50	50	3.97×10^-4	—	—	—	^[97]
80	AlOx/plasma polymer	1/20	20	85	85	3.00×10^-4	0.5	10000	≈100%	^[98]
80	Al₂O₃/TiO₂	5/5	8	85	85	2.10×10^-5	—	—	—	^[99]
60	Al₂O₃/ZnO	2/2	9	38	100	1.00×10^-6	—	—	—	^[100]
50	Al₂O₃/HfO₂	2/2	9	38	100	3.50×10^-6	—	—	—	^[100]
80	Al₂O₃/MgO	0.082/1.01	50/10	60	100	4.70×10^-6	—	—	—	^[101]
75	SiO₂	70	1	37.8	100	7.73×10^-3	—	—	—	^[80]
85	MgO/S-H nanocomposite	40/200	4.5	30	90	4.33×10^-6	—	—	—	^[102]
80	NOA63/ZrO₂/NOA63	16000/85/16000	1	20	50	9.00×10^-5	—	—	—	^[103]
80	ZrO₂/NOA63	28/16000	2	20	60	1.27×10^-4	—	—	—	^[104]
80	ZrO₂/zircone	4/1	15	20	60	3.078×10^-5	—	—	—	^[105]
70	ZnO/Al₂O₃/MgO	20/12/10	6	30	90	2.06×10^-6	0.5	—	10^-6	^[106]
70	Al₂O₃/S-H nanocomposite	60/2000	3	30	90	1.11×10^-6	1	100	—	^[107]

Table 1. Summary of the properties of various OLED encapsulation film

Figure 4. (a) Schematic diagram of an ALD system equipped with a UV lamp. Cold mirror and hot mirror reflect UV radiation and visible/IR radiation, respectively. Note that the hot mirror prevents the substrate temperature from increasing. (b) MOCON test results to obtain the WVTR for the 100 nm thick Al2O3 barrier films by thermal ALD and UV-ALD. With time, WVTR values reach a constant level that is assigned as the final WVTR value by MOCON test. The detection limit of the MOCON instrument used was 1.00×10-3 g•m-2•d-1. Reproduced with permission from ref. [95]. Copyright 2017, The Royal Society of Chemistry. (c) WVTR of Low-carbon and rich Al2O3 Films, (d) WVTR of Low-carbon and rich Al2O3 Films with Bending. (e) WVTR of three-layer multiple barrier films with bending test, (f) WVTR of five-layer multiple barrier films with bending test. Reproduced with permission from ref. [91]. Copyright 2018, The Korean Physical Society.

Figure 5. (a) Evolution of normalized PCE for the Al2O3 protected devices immersed in water. The inset picture shows photographs of the devices with Al2O3 (right) and without Al2O3 (left) layers after being kept in water for an hour; (b) evolution of normalized PCE of the control devices (black), devices with TiO2 interface layer (red), devices with TiO2 interface layer and Al2O3 encapsulation layer (blue) and devices with TiO2 interface layer and stacked Al2O3 encapsulation layer (green) stored in an ambient environment. Reproduced with permission from ref. [113]. Copyright 2018, American Chemical Society. (c) Schematic diagram of the encapsulation process; (d) efficiency of the perovskite solar cells before and after encapsulation; (e) time evolution of normalized PCE for the perovskite solar cells with and without encapsulation under a high-humidity environment. Reproduced with permission from ref. [124]. Copyright 2019, Elsevier Ltd.

ALD cycles	O₃-Al₂O₃			H₂O-Al₂O₃
ALD cycles	η_initial	η_{350 h}	%η_retention	η_initial	η_{350 h}	%η_retention
90	2.36	0.82	35	2.50	0.01	0.4
120	2.47	1.13	46	2.76	0.05	2
150	2.52	1.61	64	2.64	0.74	28
210	2.69	2.35	87	2.78	0.91	33

Table 2. The initial efficiency (ηinitial), efficiency after 350 h (η350 h) and percentage of initial efficiency retained after 350 h (%ηretention) for OPVs encapsulated with 90, 120, 150, and 210 cycles of Al2O3 deposited at 140 ℃. Reprinted with permission from Ref. [3], Copyright (2010) Elsevier B.V.

Figure 6. (a) Densities of ALD Al2O3 measured via XRR and (b) refractive index measured through SE. Reproduced with permission from ref. [88]. Copyright 2019, Elsevier Ltd and Techna Group S.r.l. (c) Optical image of representative as-deposited MAPbI3-xClx thin film. (d), (e), and (f) MAPbI3-xClx films exposed to O3, H2O, and acetic acid (AA), respectively. (g) XRD spectra of corresponding films. Reproduced with permission from ref. [120]. Copyright 2013, The Royal Society of Chemistry.

Figure 7. Lifetime characteristics of Al2O3, NL and glass lid encapsulated OLEDs compared to an OLED without encapsulation (constant-current mode). (a) Voltage-time characteristics. (b) Normalized luminance-time characteristics. Starting luminance 1000 cd/m2. Inset: Photographs of active OLED areas. (I) Without encapsulation taken after 300 h. (II) With glass lid encapsulation, (III) with Al2O3 encapsulation and (IV) with NL encapsulation taken after 1000 h. Reproduced with permission from ref. [131]. Copyright 2009, American Institute of Physics. (c) J-V characteristics of the OLED devices prepared with PE-ALD-based passivation layers and glass-encapsulated devices. The inset shows a schematic configuration of the OLED. (d) The emitting area over time, measured in OLED devices passivated with or without PE-ALD-based films at 60 ℃ and 90% RH. Reproduced with permission from ref. [163]. Copyright 2015, the Owner Societies. (e) The conductivity of Ca with respect to corrosion time under high ambient temperature and humidity. (f) TE-OLEDs luminescence versus continuous operation times for laminated Al2O3/MgO with different cyclic deposition. Reproduced with permission from ref. [101]. Copyright 2016, IOP Publishing Ltd.

Figure 8. (a) Degradation profiles of the devices with various encapsulations. All profiles except for that of the control were measured over storage in air at 28 ℃ with 60% relative humidity. The initial PCE of the devices ranged from 3.1% to 3.7%. The Al2O3/HfO2 nanolaminated films were made with the with-soak process. Reproduced with permission from ref. [155]. Copyright 2009, Elsevier B.V. (b) Average values (symbols) and standard deviation error bars of normalized photovoltaic performance parameters of 6 encapsulated OPVs as a function of time exposure to air. The dashed lines and dotted lines represent temporal evolution for the best and worse OPV device, respectively. The bottom-right panel is a schematic of an encapsulated OPV device. Reproduced with permission from ref. [59]. Copyright 2016, IOP Publishing Ltd.

Figure 9. (a) SEM cross section image of MgO/S-H nanocomposite 4.5 dyads on a Si wafer; (b) normalized conductance curves versus time. Conductance is normalized by the initial value in each sample. The black solid rectangle and red open circle mean glass and thin film encapsulation, respectively. The thin film encapsulated sample perfectly follows the trend of glass lid encapsulation. The inset shows a schematic diagram of the Ca test. Reproduced with permission from ref. [102]. Copyright 2013, Elsevier B.V. (c) A Cross-sectional TEM image of 4MP/Al2O3 multilayered film grown on a Si wafer with MLD:ALD ratio of 1:25. (d) Ca test yield vs time with the variation of a number of 4MP layers in 100 nm-thick Al2O3 thin films under 85% RH at 85 ℃. The number at the legend stands for the number of 4MP monolayers within the multilayered films. Ca test yield (%) was calculated as [(number of Ca dot oxidized at each time)/(total number of Ca dots, 144)]×100. Reproduced with permission from ref. [87]. Copyright 2019, Elsevier B.V.

Figure 10. (a) SEM cross-sectional image of the optimized organic/inorganic hybrid multilayer with 3 dyads; (b) WVTR of the optimized multilayers with respect to the increase of the dyad numbers. Reprinted with permission from ref. [38], Copyright (2014) Wiley Periodicals, Inc. (c) Right) Schematic illustration of the encapsulated PSC, and left) The cross-sectional SEM image of the TFE. (d) Shelf life of PSC encapsulated with 1—4 layers of multilayer TFE under an accelerated condition of 50 ℃, 50% RH. The numbers in legend indicate the WVTR of each TFE with unit of g•m-2•d-1. J-V characteristics of (e) pristine PSC and (f) the PSC encapsulated with 4-dyad TFE with respect to the time lapse with reverse scan. Reproduced with permission from ref. [171]. Copyright 2017, Wiley-VCH

Figure 11. (a) Comparison of transmittance for three kinds of polymer films; (b) the normalized change of electrical conductance of Ca film with composite film of AMO and different polymer as a function of time; (c) photographic images of encapsulated TE-OLEDs before and after chemical agent bath; (d) a schematic diagram of each layered structure; IS (inorganic layer/substrate), EIS (epoxy coating/inorganic layer/substrate), and EZIS (epoxy-ZrP nanocomposite coating/inorganic layer/substrate). Reproduced with permission from ref. [93]. Copyright 2017, Elsevier B.V.

Device structure	Deposition temperature/℃	WVTR/ (g•m^-2•d^-1)	PCE/%	Aging condition and stablity tests	Ref.
ITO/PEDOT:PSS/MAPbI₃/PCBM/ ALD ZnO/Ag NWs/50 nm ALD Al₂O₃ coated PET	100	9×10^-4	10.55	being exposed to ambience (30 ℃, 65% relative humidity) for more than 40 d	^[131]
FTO/bl-TiO₂/mp-TiO₂/(FAPbI₃)_0.87-(MAPbBr₃)_0.13/PTAA/Au/ALD Al₂O₃/pV3D3	60	1×10^-4	18.2±1.3	maintained 97% of its original efficiency after 300 h of exposure at 50 ℃ and 50% RH.	^[171]
FTO/ALD-NiO/Cs_0.05MA_0.95PbI₃/ PCBM/BCP/ALD-AZO/Ag /50 nm ALD Al₂O₃	100	—	18.4	maintaining 86.7% of the initial PCE under continuous1 Sun illumination at 85 ℃ in ambient air with constant near maximum power point over 500 h	^[160]
ITO/NIO/CH₃NH₃PbI₃/PC₆₁BM/ALD TiO₂/Ag/60 nm ALD Al₂O₃	60	—	—	93% of the initial PCE remained after being stored in ambient for a thousand hours	^[113]
FTO/bl-TiO₂/mp-TiO₂/MAPbI₃/Spiro-OMeTAD/Au/16 nm ALD Al₂O₃	60	—	17.4	exhibited a final PCE of 12.4% after more than 2250 h of storage underambient conditions (from original PCE=16.4%)	^[132]
FTO/bl-TiO₂/mp-TiO₂/(FAPbI₃)_0.85-(MAPbBr₃)_0.15/PTAA/Au/50 nm Al₂O₃	95	1.84×10^-2	15.3	with less than 4% drop in PCE after 7500 h (>10 months) of exposure to 50%RH under room temperature.	^[194]
ITO/SnO₂/MAPbI₃/Spiro-MeOTD/Ag/Alucone/ALD Al₂O₃	50	1.3×10^-5	17.01	at 80% relative humidity and 30 ℃ for over 2000 h while preserving 96% of its initial performance	^[124]
FTO/SnO₂/(FA_0.83MA_0.17)_0.95Cs_0.05-PbI_2.5Br_0.5/Spiro-OMeTAD/Au/300 cycles ALD Al₂O₃	75	—	19.4	retaining 84% of its initial efficiency by the end of 300 d stored in ambient conditions	^[124,133]

Table 3. ALD-Al2O3 encapsulation in different device structures of PSCS,including deposition temperature, WVTR, PCE of the encapsulated devices and the results of the stability tests

Material	Temperature/℃	WVTR/ (g•m^-2•d^-1)	J_sc/ (mA•cm^-2)	PCE/%	Lifetime	Cycle	Thickness/nm	Ref.
ITO/PEDOT:PSS/ Polymer:PCBM/Ca/Al	80	—	5.31	1.93	300 h/72%	1000	100(Al₂O₃)	^[137]
ITO/PEDOT:PSS/ rrP3HT:PC₇₀BM/Yb/Al	70	—	—	—	250 min/95%	3000	330(Al₂O₃)	^[136]
ITO/PEIE/P3HT:ICBA/ MoO₃/Ag	30	—	9	3	>1400 h/88%	—	10(TiO₂)/10(Al₂O₃)/ 400(SiN_x)/30(Al₂O₃)/ 10(TiO₂)	^[59]
ITO/PEDOT:PSS/ P3HT:PCBM/AlO_x/Pt	100	—	7	2.9	>2000 h/30%	999	≤100	^[112,135]
OPV	90	1.29×10^-5	—	—	—	—	500(pV4D4)/35(Al₂O₃)/200(pV4D4)/35(Al₂O₃)/200(pV4D4)/35(Al₂O₃)	^[38]
ITO/PEDOT:PSS/ P3HT:PCBM/Al	100	<5×10^-4	8.3	3.1	>450 h/50%	480	27(AlO_x/HfO_x cycle 30)	^[37]
ITO/MoO_x/ClAlPc/ ClAlPc:C₆₀/C₆₀/BCP/Ag	100	<5×10^-4	—	1.7	>1200 h/10%	480	27(AlO_x/HfO_x cycle 30)	^[37]
ITO/PEDOT:PSS/ P3HT:PCBM/Al	140	—	9.15	2.7	500 h/80%	210	18(Al₂O₃)	^[119]
ITO/PEDOT:PSS/ P3HT:PCBM/Al	140	—	9.98	3.66	640 h/50%	104	26(Al₂O₃/HfO₂ cycle 52)+UV-curable epoxy resin film	^[195]
ITO/pentacene/C₆₀/ BCP/Al	100	—	11.1	2.8	6145 h/94%	—	200(Al₂O₃)	^[134]

Table 4. Photovoltaic performance summary of organic solar cells with different ALD encapsulation

References 195

[1]	Kojima, A.; Teshima, K.; Shirai, Y.; Miyasaka, T. J. Am. Chem. Soc. 2009, 131, 6050. doi: 10.1021/ja809598r
[2]	Zhao, B.; Bai, S.; Kim, V.; Lamboll, R.; Shivanna, R.; Auras, F.; Richter, J. M.; Yang, L.; Dai, L.; Alsari, M.; She, X.-J.; Liang, L.; Zhang, J.; Lilliu, S.; Gao, P.; Snaith, H. J.; Wang, J.; Greenham, N. C.; Friend, R. H.; Di, D. Nat Photonics 2018, 12, 783. doi: 10.1038/s41566-018-0283-4
[3]	Yuan, J.; Zhang, Y.; Zhou, L.; Zhang, G.; Yip, H.-L.; Lau, T.-K.; Lu, X.; Zhu, C.; Peng, H.; Johnson, P. A.; Leclerc, M.; Cao, Y.; Ulanski, J.; Li, Y.; Zou, Y. Joule 2019, 3, 1140. doi: 10.1016/j.joule.2019.01.004
[4]	Lee, M. M.; Teuscher, J.; Miyasaka, T.; Murakami, T. N.; Snaith, H. J. Science 2012, 338, 643. doi: 10.1126/science.1228604
[5]	Hu, X.-M.; Zhong, C.-X.; Li, X.-Y.; Jia, X.; Wei, Y.; Xie, L.-H. Acta Chim. Sinica 2021, 79, 953. (in Chinese) doi: 10.6023/A21050196
	(胡鑫明, 钟春晓, 李晓艳, 贾雄, 魏颖, 解令海, 化学学报, 2021, 79, 953.) doi: 10.6023/A21050196
[6]	Miao, J.-H.; Ding, Z.-C.; Liu, J.; Wang, L.-X. Acta Chim. Sinica 2021, 79, 545. (in Chinese) doi: 10.6023/A20120589
	(苗俊辉, 丁自成, 刘俊, 王利祥, 化学学报, 2021, 79, 545.) doi: 10.6023/A20120589
[7]	Zhou, M.; Li, J.; Chneg, J.; Ge, C.-W.; Cheng, T.-Y.; Gao, X.-K. Chin. J. Org. Chem. 2021, 41, 4400. (in Chinese) doi: 10.6023/cjoc202105023
	(周敏, 李晶, 程杰, 葛从伍, 程探宇, 高希珂, 有机化学, 2021, 41, 4400.) doi: 10.6023/cjoc202105023
[8]	Bian, Y.-S.; Liu, K.; Guo, Y.-L.; Liu, Y.-Q. Acta Chim. Sinica 2020, 78, 848. (in Chinese) doi: 10.6023/A20050197
	(边洋爽, 刘凯, 郭云龙, 刘云圻, 化学学报, 2020, 78, 848.) doi: 10.6023/A20050197
[9]	Hou, B.; Li, J.; Xin, Z.-H.; Yang, X.-D.; Gao, H.-L.; Peng, P.-Z.; Gao, X.-K. Acta Chim. Sinica 2020, 78, 788. (in Chinese) doi: 10.6023/A20050161
	(侯斌, 李晶, 辛涵申, 杨笑迪, 高洪磊, 彭培珍, 高希珂, 化学学报, 2020, 78, 788.) doi: 10.6023/A20050161
[10]	Liu, H.; Zhang, X.-F.; Cheng, J.-Z.; Ye, D.-D.; Chen, L.; Wen, H.-R.; Liu, S.-Y. Chin. J. Org. Chem. 2020, 40, 831. (in Chinese) doi: 10.6023/cjoc201910042
	(刘慧, 张小凤, 程敬招, 叶东鼐, 陈龙, 温和瑞, 刘诗咏, 有机化学, 2020, 40, 831.) doi: 10.6023/cjoc201910042
[11]	Cai, J.-F.; Jiang, H.; Cui, Z.-H.; Chen, W.-G. Chin. J. Org. Chem. 2020, 40, 351. (in Chinese)
	(蔡金芳, 江华, 崔志华, 陈维国, 有机化学, 2020, 40, 351.) doi: 10.6023/cjoc201909022
[12]	Dai, X.-X.; Cheng, X.-D.; Kan, Z.-P.; Xiao, Z.-Y.; Duan, T.-N.; Hu, C.; Lu, S.-R. Chin. J. Org. Chem. 2020, 40, 4031. (in Chinese) doi: 10.6023/cjoc202005023
	(戴学新, 成晓东, 阚志鹏, 肖泽云, 段泰男, 胡超, 陆仕荣, 有机化学, 2020, 40, 4031.) doi: 10.6023/cjoc202005023
[13]	Jiang, D.-N.; Yan, K.-R.; Li, C.-Z. Acta Chim. Sinica 2020, 78, 1287. (in Chinese) doi: 10.6023/A20080342
	(蒋丹妮, 严康荣, 李昌治, 化学学报, 2020, 78, 1287.) doi: 10.6023/A20080342
[14]	Li, T.-F.; Zhan, X.-W. Acta Chim. Sinica 2021, 79, 257 (In Chinese). doi: 10.6023/A20110502
	(李腾飞, 占肖卫, 化学学报, 2021, 79, 257.) doi: 10.6023/A20110502
[15]	Park, S.; Yun, W. M.; Kim, L. H.; Park, S.; Kim, S. H.; Park, C. E. Org. Electron. 2013, 14, 3385. doi: 10.1016/j.orgel.2013.09.045
[16]	Cheng, P.; Zhan, X. Chem. Soc. Rev. 2016, 45, 2544. doi: 10.1039/c5cs00593k pmid: 26890341
[17]	Norrman, K.; Gevorgyan, S. A.; Krebs, F. C. ACS Appl. Mater. Interfaces 2009, 1, 102. doi: 10.1021/am800039w
[18]	Fu, Q.; Tang, X.; Huang, B.; Hu, T.; Tan, L.; Chen, L.; Chen, Y. Adv. Sci. (Weinh) 2018, 5, 1700387.
[19]	Yang, D.; Yang, Y. q.; Duan, Y.; Chen, P.; Zang, C. L.; Xie, Y.; Liu, D. M.; Wang, X.; Duan, Y. H.; Sun, F. B.; Gao, Q.; Xue, K. W. ECS Solid State Lett. 2013, 2, R31. doi: 10.1149/2.007309ssl
[20]	Eperon, G. E.; Habisreutinger, S. N.; Leijtens, T.; Bruijnaers, B. J.; van Franeker, J. J.; deQuilettes, D. W.; Pathak, S.; Sutton, R. J.; Grancini, G.; Ginger, D. S.; Janssen, R. A. J.; Petrozza, A.; Snaith, H. J. ACS Nano 2015, 9, 9380. doi: 10.1021/acsnano.5b03626 pmid: 26247197
[21]	Wu, Z.; Bai, S.; Xiang, J.; Yuan, Z.; Yang, Y.; Cui, W.; Gao, X.; Liu, Z.; Jin, Y.; Sun, B. Nanoscale 2014, 6, 10505. doi: 10.1039/C4NR03181D
[22]	Kimura, M.; Kuwano, S.; Sawaki, Y.; Fujikawa, H.; Noda, K.; Taga, Y.; Takagi, K. J. Mater. Chem. 2005, 15, 2393. doi: 10.1039/b502268a
[23]	Ke, W.; Fang, G.; Liu, Q.; Xiong, L.; Qin, P.; Tao, H.; Wang, J.; Lei, H.; Li, B.; Wan, J.; Yang, G.; Yan, Y. J. Am. Chem. Soc. 2015, 137, 6730. doi: 10.1021/jacs.5b01994
[24]	Bolink, H. J.; Coronado, E.; Repetto, D.; Sessolo, M.; Barea, E. M.; Bisquert, J.; Garcia-Belmonte, G.; Prochazka, J.; Kavan, L. Adv. Funct. Mater. 2008, 18, 145. doi: 10.1002/adfm.v18:1
[25]	Wöhrle, D.; Meissner, D. Adv. Mater. 1991, 3, 129. doi: 10.1002/adma.19910030303
[26]	Smith, I. C.; Hoke, E. T.; Solis-Ibarra, D.; McGehee, M. D.; Karunadasa, H. I. Angew. Chem. Int. Ed. 2014, 53, 11232. doi: 10.1002/anie.201406466
[27]	Zhou, H.; Chen, Q.; Li, G.; Luo, S.; Song, T.-b.; Duan, H.-S.; Hong, Z.; You, J.; Liu, Y.; Yang, Y. Science 2014, 345, 542. doi: 10.1126/science.1254050
[28]	Zhang, J.; Hu, Z.; Huang, L.; Yue, G.; Liu, J.; Lu, X.; Hu, Z.; Shang, M.; Han, L.; Zhu, Y. Chem. Commun. (Camb) 2015, 51, 7047. doi: 10.1039/C5CC00128E
[29]	Weerasinghe, H. C.; Dkhissi, Y.; Scully, A. D.; Caruso, R. A.; Cheng, Y.-B. Nano Energy 2015, 18, 118. doi: 10.1016/j.nanoen.2015.10.006
[30]	Shi, L.; Bucknall, M. P.; Young, T. L.; Zhang, M.; Hu, L.; Bing, J.; Lee, D. S.; Kim, J.; Wu, T.; Takamure, N.; McKenzie, D. R.; Huang, S.; Green, M. A.; Ho-Baillie, A. W. Y. Science 2020, 368, 1328.
[31]	Han, Y.; Meyer, S.; Dkhissi, Y.; Weber, K.; Pringle, J. M.; Bach, U.; Spiccia, L.; Cheng, Y.-B. J. Mater. Chem. A 2015, 3, 8139. doi: 10.1039/C5TA00358J
[32]	Dong, Q.; Liu, F.; Wong, M. K.; Tam, H. W.; Djurisic, A. B.; Ng, A.; Surya, C.; Chan, W. K.; Ng, A. M. ChemSusChem 2016, 9, 2597. doi: 10.1002/cssc.201600868 pmid: 27504719
[33]	Cheacharoen, R.; Boyd, C. C.; Burkhard, G. F.; Leijtens, T.; Raiford, J. A.; Bush, K. A.; Bent, S. F.; McGehee, M. D. Sustain. Energ. Fuels 2018, 2, 2398. doi: 10.1039/C8SE00250A
[34]	Satoh, R.-i.; Ro, T.; Heo, C.-J.; Lee, G. H.; Xianyu, W.; Park, Y.; Park, J.; Lim, S.-J.; Leem, D.-S.; Bulliard, X.; Kim, Y.; Bae, K.; Yang, W.-Y.; Park, K.-B.; Jin, Y. W.; Lee, S. Org. Electron. 2017, 41, 259. doi: 10.1016/j.orgel.2016.11.013
[35]	Michels, J. J.; Peter, M.; Salem, A.; van Remoortere, B.; van den Brand, J. J. Mater. Chem. C 2014, 2, 5759. doi: 10.1039/c4tc00707g
[36]	Tranchida, D.; Piccarolo, S.; Soliman, M. Macromolecules 2006, 39, 4547. doi: 10.1021/ma052727j
[37]	Bernardi, A.; Macko, J.; Po, R.; Mahony, A.; Scudo, P.; Bulovic, V. Sol. Energy Mater. Sol. Cells 2013, 10, 1. doi: 10.1016/0165-1633(84)90002-9
[38]	Kim, B. J.; Kim, D. H.; Kang, S. Y.; Ahn, S. D.; Im, S. G. J. Appl. Polym. Sci. 2014, 131, 40030.
[39]	Yang, C.; Bi, H.; Wan, D.; Huang, F.; Xie, X.; Jiang, M. J. Mater. Chem. A 2013, 1, 770. doi: 10.1039/C2TA00234E
[40]	Zhang, C.-X.; Song, G.-P.; Sun, Y.; Zhao, Y.-J.; He, X.-D. Mater. Rev. 2012, 26(S2), 124. (in Chinese)
	(张传鑫, 宋广平, 孙跃, 赵轶杰, 赫晓东, 材料导报, 2012, 26(S2), 124.)
[41]	Sang, R.; Zhang, H.; Long, L.; Hua, Z.; Yu, J.; Wei, B.; Wu, X.; Feng, T.; Zhang, J. 2011 12th International Conference on Electronic Packaging Technology and High Density Packaging, IEEE, Shanghai, 2011, pp. 1-4.
[42]	Ono, S.; Häusermann, R.; Chiba, D.; Shimamura, K.; Ono, T.; Batlogg, B. Appl. Phys. Lett. 2014, 104, 013307. doi: 10.1063/1.4860998
[43]	Chen, T.; Xue, Y.; Roy, A. K.; Dai, L. ACS Nano 2014, 8, 1039. doi: 10.1021/nn405939w pmid: 24350978
[44]	Kukli, K.; Ritala, M.; Leskelä, M. Chem. Vap. Deposition 2000, 6, 297. doi: 10.1002/(ISSN)1521-3862
[45]	George, S. M. Chem. Rev. 2010, 110, 111. doi: 10.1021/cr900056b
[46]	Ghazaryan, L.; Kley, E. B.; Tünnermann, A.; Szeghalmi, A. Nanotechnology 2016, 27, 255603. doi: 10.1088/0957-4484/27/25/255603 pmid: 27176497
[47]	Koushik, D.; Verhees, W. J. H.; Kuang, Y.; Veenstra, S.; Zhang, D.; Verheijen, M. A.; Creatore, M.; Schropp, R. E. I. Energ. Environ. Sci. 2017, 10, 91. doi: 10.1039/C6EE02687G
[48]	Khalily, M. A.; Patil, B.; Yilmaz, E.; Uyar, T. Nanoscale Adv. 2019, 1, 1224. doi: 10.1039/C8NA00330K
[49]	Donders, M. E.; Knoops, H. C. M.; Kessels, W. M. M.; Notten, P. H. L. J. Power Sources 2012, 203, 72. doi: 10.1016/j.jpowsour.2011.12.020
[50]	Hyde, G. K.; McCullen, S. D.; Jeon, S.; Stewart, S. M.; Jeon, H.; Loboa, E. G.; Parsons, G. N. Biomed. Mater. 2009, 4, 025001. doi: 10.1088/1748-6041/4/2/025001
[51]	Leskelä, M.; Ritala, M. Thin Solid Films 2002, 409, 138. doi: 10.1016/S0040-6090(02)00117-7
[52]	Hao, H.; Chen, X.; Li, Z.; Shen, Y.; Wang, H.; Zhao, Y.; Huang, R.; Liu, T.; Liang, J.; An, Y.; Peng, Q.; Ding, S. J. Semicond. 2019, 40, 012806. doi: 10.1088/1674-4926/40/1/012806
[53]	Mackus, A. J. M.; Schneider, J. R.; MacIsaac, C.; Baker, J. G.; Bent, S. F. Chem. Mater. 2019, 31, 1142. doi: 10.1021/acs.chemmater.8b02878
[54]	Lee, S.; Han, J.-H.; Lee, S.-H.; Baek, G.-H.; Park, J.-S. JOM 2018, 71, 197. doi: 10.1007/s11837-018-3150-3
[55]	Seo, S.; Jeong, S.; Park, H.; Shin, H.; Park, N. G. Chem. Commun. (Camb) 2019, 55, 2403. doi: 10.1039/C8CC09578G
[56]	Zhou, B.; Liu, M.; Wen, Y.; Li, Y.; Chen, R. Opto-Electron. Adv. 2020, 3, 19004301. doi: 10.29026/oea.2020.190043
[57]	Hossain, M. A.; Khoo, K. T.; Cui, X.; Poduval, G. K.; Zhang, T.; Li, X.; Li, W. M.; Hoex, B. Nano Mater. Sci. 2020, 2, 204.
[58]	Lu, Q.; Yang, Z.; Meng, X.; Yue, Y.; Ahmad, M. A.; Zhang, W.; Zhang, S.; Zhang, Y.; Liu, Z.; Chen, W. Adv. Funct. Mater. 2021, 31, 2100151. doi: 10.1002/adfm.v31.23
[59]	Perrotta, A.; Fuentes-Hernandez, C.; Khan, T. M.; Kippelen, B.; Creatore, M.; Graham, S. J. Phys D: Appl. Phys. 2016, 50, 024003. doi: 10.1088/1361-6463/50/2/024003
[60]	De Keijser, M.; Van Opdorp, C. Appl. Phys. Lett. 1991, 58, 1187. doi: 10.1063/1.104360
[61]	Jahanfar, M.; Suwa, K.; Tsuchiya, K.; Ogino, K. O. Open J. Org. Polym. Mater. 2013, 03, 46.
[62]	Reineke, S.; Lindner, F.; Schwartz, G.; Seidler, N.; Walzer, K.; Lüssem, B.; Leo, K. Nature 2009, 459, 234. doi: 10.1038/nature08003
[63]	Adachi, C.; Baldo, M. A.; Forrest, S. R.; Thompson, M. E. Appl. Phys. Lett. 2000, 77, 904. doi: 10.1063/1.1306639
[64]	Schaer, M.; Nüesch, F.; Berner, D.; Leo, W.; Zuppiroli, L. Adv. Funct. Mater. 2001, 11, 116. doi: 10.1002/(ISSN)1616-3028
[65]	Kim, N.; Potscavage, W. J.; Domercq, B.; Kippelen, B.; Graham, S. Appl. Phys. Lett. 2009, 94, 163308. doi: 10.1063/1.3115144
[66]	O'Brien, D. F.; Baldo, M. A.; Thompson, M. E.; Forrest, S. R. Appl. Phys. Lett. 1999, 74, 442. doi: 10.1063/1.123055
[67]	Schubert, S.; Klumbies, H.; Muller-Meskamp, L.; Leo, K. Rev. Sci. Instrum. 2011, 82, 094101. doi: 10.1063/1.3633956
[68]	Riedl, T.; Winkler, T.; Schmidt, H.; Meyer, J.; Schneidenbach, D.; Johannes, H.-H.; Kowalsky, W.; Weimann, T.; Hinze, P. 2010 IEEE International Reliability Physics Symposium, IEEE, Anaheim, 2010, pp. 327-333.
[69]	S.Holdcroft, Macromolecules 1991, 24, 4834. doi: 10.1021/ma00017a017
[70]	Abdou, M. S. A.; Holdcroft, S. Macromolecules 1993, 26, 2954. doi: 10.1021/ma00063a047
[71]	Abdou, M.; Holdcroft, S. Can. J. Chem. 2011, 73, 1893. doi: 10.1139/v95-234
[72]	Rivaton, A.; Chambon, S.; Manceau, M.; Gardette, J.-L.; Lemaître, N.; Guillerez, S. Polym. Degrad. Stab. 2010, 95, 278. doi: 10.1016/j.polymdegradstab.2009.11.021
[73]	Manceau, M.; Rivaton, A.; Gardette, J.-L. Macromol. Rapid Commun. 2008, 29, 1823. doi: 10.1002/marc.v29:22
[74]	Golovnin, I. V.; Bakulin, A. A.; Zapunidy, S. A.; Nechvolodova, E. M.; Paraschuk, D. Y. Appl. Phys. Lett. 2008, 92, 243311. doi: 10.1063/1.2945801
[75]	Paul, E. B.; Gordon, L. G.; Mark, E. G.; Peter, M. M.; Michael, H.; Eric, M.; Charles, C. B.; Wendy, D. B.; Lech, A. M.; Michael, S. W.; Julie, J. B.; Fogarty, D.; Linda, S. S. 2001 International Symposium on Optical Science and Technology, SPIE, San Diego, 2000, pp. 75-83.
[76]	Jørgensen, M.; Norrman, K.; Gevorgyan, S. A.; Tromholt, T.; Andreasen, B.; Krebs, F. C. Adv. Mater. 2012, 24, 580. doi: 10.1002/adma.201104187
[77]	Norrman, K.; Madsen, M. V.; Gevorgyan, S. A.; Krebs, F. C. J. Am. Chem. Soc. 2010, 132, 16883. doi: 10.1021/ja106299g pmid: 21053947
[78]	Dao, Q.-D.; Fujii, A.; Tsuji, R.; Ozaki, M. Appl. Phys. Express 2019, 12, 112009. doi: 10.7567/1882-0786/ab4aa2
[79]	Zhang, Y.; Lv, H.; Cui, C.; Xu, L.; Wang, P.; Wang, H.; Yu, X.; Xie, J.; Huang, J.; Tang, Z.; Yang, D. Nanotechnology 2017, 28, 205401. doi: 10.1088/1361-6528/aa6956
[80]	Lee, Y.; Seo, S.; Oh, I.-K.; Lee, S.; Kim, H. Ceram. Int. 2019, 45, 17662. doi: 10.1016/j.ceramint.2019.05.332
[81]	Carcia, P. F.; McLean, R. S.; Groner, M. D.; Dameron, A. A.; George, S. M. J. Appl. Phys. 2009, 106, 023533. doi: 10.1063/1.3159639
[82]	Yang, Y.-Q.; Duan, Y.; Chen, P.; Sun, F.-B.; Duan, Y.-H.; Wang, X.; Yang, D. J. Phys. Chem. C 2013, 117, 20308. doi: 10.1021/jp406738h
[83]	da Silva Sobrinho, A. S.; Czeremuszkin, G.; Latrèche, M.; Dennler, G.; Wertheimer, M. R. Surf. Coat. Technol. 1999, 116-119, 1204. doi: 10.1016/S0257-8972(99)00152-8
[84]	Duan, Y.; Sun, F.; Yang, Y.; Chen, P.; Yang, D.; Duan, Y.; Wang, X. ACS Appl. Mater. Interfaces 2014, 6, 3799. doi: 10.1021/am500288q
[85]	Choi, Y. J.; Yong, S. H.; Kim, S. J.; Hwangbo, H.; Cho, S. M.; Pu, L. S.; Chae, H. Thin Solid Films 2019, 690, 137524. doi: 10.1016/j.tsf.2019.137524
[86]	Su, D.-Y.; Kuo, Y.-H.; Tseng, M.-H.; Tsai, F.-Y. J. Coat. Technol. Res. 2019, 16, 1751. doi: 10.1007/s11998-019-00238-x
[87]	Park, J.; Seth, J.; Cho, S.; Sung, M. M. Appl. Surf. Sci. 2020, 502, 144109. doi: 10.1016/j.apsusc.2019.144109
[88]	Nam, T.; Lee, H.; Seo, S.; Cho, S. M.; Shong, B.; Lee, H.-B.-R.; Kim, H. Ceram. Int. 2019, 45, 19105. doi: 10.1016/j.ceramint.2019.06.156
[89]	Chen, G.; Weng, Y.; Sun, F.; Zhou, X.; Wu, C.; Yan, Q.; Guo, T.; Zhang, Y. RSC Adv. 2019, 9, 20884. doi: 10.1039/C9RA02111F
[90]	Kim, H. G.; Lee, J. G.; Kim, S. S. Org. Electron. 2018, 52, 98. doi: 10.1016/j.orgel.2017.10.004
[91]	Yong, S. H.; Kim, S. J.; Park, J. S.; Cho, S. M.; Ahn, H. J.; Chae, H. J. Korean Phys. Soc. 2018, 73, 40. doi: 10.3938/jkps.73.40
[92]	Wu, J.; Fei, F.; Wei, C.; Chen, X.; Nie, S.; Zhang, D.; Su, W.; Cui, Z. RSC Adv. 2018, 8, 5721. doi: 10.1039/C8RA00023A
[93]	Wang, L.; Ruan, C.; Li, M.; Zou, J.; Tao, H.; Peng, J.; Xu, M. J. Mater. Chem. C 2017, 5, 4017. doi: 10.1039/C7TC00903H
[94]	Yoon, K. H.; Kim, H. S.; Han, K. S.; Kim, S. H.; Lee, Y. K.; Shrestha, N. K.; Song, S. Y.; Sung, M. M. ACS Appl. Mater. Interfaces 2017, 9, 5399. doi: 10.1021/acsami.6b15404
[95]	Yoon, K. H.; Kim, H.; Koo Lee, Y.-E.; Shrestha, N. K.; Sung, M. M. RSC Adv. 2017, 7, 5601. doi: 10.1039/C6RA27759D
[96]	Jeong, E. G.; Han, Y. C.; Im, H.-G.; Bae, B.-S.; Choi, K. C. Org. Electron. 2016, 33, 150. doi: 10.1016/j.orgel.2016.03.015
[97]	Oh, J.; Shin, S.; Park, J.; Ham, G.; Jeon, H. Thin Solid Films 2016, 599, 119. doi: 10.1016/j.tsf.2015.12.044
[98]	Lim, S. H.; Seo, S.-W.; Lee, H.; Chae, H.; Cho, S. M. Korean J. Chem. Eng. 2016, 33, 1971. doi: 10.1007/s11814-016-0037-2
[99]	Zhou, Z.-W.; Li, M.; Xu, M.; Zou, J.-H.; Wang, L.; Peng, J.-B. CJLCD 2016, 31, 532. (in Chinese)
	(周忠伟, 李民, 徐苗, 邹建华, 王磊, 彭俊彪, 液晶与显示, 2016, 31, 532.)
[100]	Tseng, M. H.; Yu, H. H.; Chou, K. Y.; Jou, J. H.; Lin, K. L.; Wang, C. C.; Tsai, F. Y. Nanotechnology 2016, 27, 295706. doi: 10.1088/0957-4484/27/29/295706
[101]	Li, M.; Xu, M.; Zou, J.; Tao, H.; Wang, L.; Zhou, Z.; Peng, J. Nanotechnology 2016, 27, 494003. doi: 10.1088/0957-4484/27/49/494003
[102]	Kim, E.; Han, Y.; Kim, W.; Choi, K. C.; Im, H.-G.; Bae, B.-S. Org. Electron. 2013, 14, 1737. doi: 10.1016/j.orgel.2013.04.011
[103]	Gao, Q.; Yang, D.; Yang, Y.-Q.; Tao, Y.; Liu, Y.-F.; Duan, Y.; Chen, P. J. Optoelectronics.Laser 2014, 25, 1721. (in Chinese)
	(高强, 杨丹, 杨永强, 陶冶, 刘云飞, 段羽, 陈平, 光电子. 激光, 2014, 25, 1721.)
[104]	Duan, Y.; Wang, X.; Duan, Y.-H.; Yang, Y.-Q.; Chen, P.; Yang, D.; Sun, F.-B.; Xue, K.-W.; Hu, N.; Hou, J.-W. Org. Electron. 2014, 15, 1936. doi: 10.1016/j.orgel.2014.05.001
[105]	Chen, Z.; Wang, H.; Wang, X.; Chen, P.; Liu, Y.; Zhao, H.; Zhao, Y.; Duan, Y. Sci. Rep. 2017, 7, 40061. doi: 10.1038/srep40061
[106]	Kwon, J. H.; Jeon, Y.; Choi, S.; Park, J. W.; Kim, H.; Choi, K. C. ACS Appl. Mater. Interfaces 2017, 9, 43983. doi: 10.1021/acsami.7b14040
[107]	Kwon, J. H.; Jeong, E. G.; Jeon, Y.; Kim, D. G.; Lee, S.; Choi, K. C. ACS Appl. Mater. Interfaces 2019, 11, 3251. doi: 10.1021/acsami.8b11930
[108]	Klumbies, H.; Schmidt, P.; Hähnel, M.; Singh, A.; Schroeder, U.; Richter, C.; Mikolajick, T.; Hoßbach, C.; Albert, M.; Bartha, J. W.; Leo, K.; Müller-Meskamp, L. Org. Electron. 2015, 17, 138. doi: 10.1016/j.orgel.2014.12.003
[109]	Carcia, P. F.; McLean, R. S.; Reilly, M. H.; Groner, M. D.; George, S. M. Appl. Phys. Lett. 2006, 89, 031915. doi: 10.1063/1.2221912
[110]	Langereis, E.; Keijmel, J.; van de Sanden, M. C. M.; Kessels, W. M. M. Appl. Phys. Lett. 2008, 92, 231904. doi: 10.1063/1.2940598
[111]	Luo, Y.; Li, T.-J.; Duan, Y. J. Optoelectronics.Laser 2014, 25, 840. (in Chinese)
	(骆杨, 李天骄, 段羽, 光电子. 激光, 2014, 25, 840.)
[112]	Clark, M. D.; Jespersen, M. L.; Patel, R. J.; Leever, B. J. Org. Electron. 2014, 15, 1. doi: 10.1016/j.orgel.2013.10.014
[113]	Lv, Y.; Xu, P.; Ren, G.; Chen, F.; Nan, H.; Liu, R.; Wang, D.; Tan, X.; Liu, X.; Zhang, H.; Chen, Z.-K. ACS Appl. Mater. Interfaces 2018, 10, 23928. doi: 10.1021/acsami.8b07346
[114]	Batra, N.; Gope, J.; Vandana; Panigrahi, J.; Singh, R.; Singh, P. K. AIP Advances 2015, 5, 067113. doi: 10.1063/1.4922267
[115]	Ahvenniemi, E.; Akbashev, A. R.; Ali, S.; Bechelany, M.; Berdova, M.; Boyadjiev, S.; Cameron, D. C.; Chen, R.; Chubarov, M.; Cremers, V.; Devi, A.; Drozd, V.; Elnikova, L.; Gottardi, G.; Grigoras, K.; Hausmann, D. M.; Hwang, C. S.; Jen, S.-H.; Kallio, T.; Kanervo, J.; Khmelnitskiy, I.; Kim, D. H.; Klibanov, L.; Koshtyal, Y.; Krause, A. O. I.; Kuhs, J.; Kärkkänen, I.; Kääriäinen, M.-L.; Kääriäinen, T.; Lamagna, L.; Łapicki, A. A.; Leskelä, M.; Lipsanen, H.; Lyytinen, J.; Malkov, A.; Malygin, A.; Mennad, A.; Militzer, C.; Molarius, J.; Norek, M.; Özgit-Akgün, Ç.; Panov, M.; Pedersen, H.; Piallat, F.; Popov, G.; Puurunen, R. L.; Rampelberg, G.; Ras, R. H. A.; Rauwel, E.; Roozeboom, F.; Sajavaara, T.; Salami, H.; Savin, H.; Schneider, N.; Seidel, T. E.; Sundqvist, J.; Suyatin, D. B.; Törndahl, T.; van Ommen, J. R.; Wiemer, C.; Ylivaara, O. M. E.; Yurkevich, O. J. Vac. Sci. Technol. A 2016, 35, 010801. doi: 10.1116/1.4971389
[116]	Yang, Y. Q.; Yu, D.; Duan, Y. H.; Wang, X.; Chen, P.; Yang, D.; Sun, F. B.; Xue, K. W. Org. Electron. 2014, 15, 1120. doi: 10.1016/j.orgel.2014.03.007
[117]	Yang, Y. Q.; Yu, D. J. Phys. Chem C 2014, 118, 18783. doi: 10.1021/jp505974j
[118]	Li, M.; Gao, D.; Li, S.; Zhou, Z.; Zou, J.; Tao, H.; Wang, L.; Xu, M.; Peng, J. RSC Adv. 2015, 5, 104613. doi: 10.1039/C5RA21424F
[119]	Sarkar, S.; Culp, J. H.; Whyland, J. T.; Garvan, M.; Misra, V. Org. Electron. 2010, 11, 1896. doi: 10.1016/j.orgel.2010.08.020
[120]	Kim, I. S.; Martinson, A. B. F. J. Mater. Chem. A 2015, 3, 20092. doi: 10.1039/C5TA07186K
[121]	Chalker, P. R. Surf. Coat. Tech. 2016, 291, 258. doi: 10.1016/j.surfcoat.2016.02.046
[122]	Kim, H. G.; Lee, J. G.; Kim, S. S. Org. Electron. 2017, 50, 239. doi: 10.1016/j.orgel.2017.07.030
[123]	Jarvis, K. L.; Evans, P. J.; Triani, G. Surf. Coat. Tech. 2018, 337, 44. doi: 10.1016/j.surfcoat.2017.12.056
[124]	Wang, H.; Zhao, Y.; Wang, Z.; Liu, Y.; Zhao, Z.; Xu, G.; Han, T.-H.; Lee, J.-W.; Chen, C.; Bao, D.; Huang, Y.; Duan, Y.; Yang, Y. Nano Energy 2020, 69, 104375. doi: 10.1016/j.nanoen.2019.104375
[125]	Hoffmann, L.; Theirich, D.; Pack, S.; Kocak, F.; Schlamm, D.; Hasselmann, T.; Fahl, H.; Räupke, A.; Gargouri, H.; Riedl, T. ACS Appl. Mater. Interfaces 2017, 9, 4171. doi: 10.1021/acsami.6b13380
[126]	Henke, T.; Knaut, M.; Hossbach, C.; Geidel, M.; Albert, M.; Bartha, J. W. Surf. Coat. Tech. 2017, 309, 600. doi: 10.1016/j.surfcoat.2016.11.048
[127]	Puurunen, R. L. Chem. Vap. Deposition 2003, 9, 327. doi: 10.1002/(ISSN)1521-3862
[128]	Guerra, C.; Döebeli, M.; Michler, J.; Utke, I. Chem. Mater. 2017, 29, 8690. doi: 10.1021/acs.chemmater.7b02759
[129]	Muneshwar, T.; Cadien, K. J. Appl. Phys. 2018, 124, 095302. doi: 10.1063/1.5044456
[130]	Wang, H.; Wang, Z.; Xu, X.; Liu, Y.; Chen, C.; Chen, P.; Hu, W.; Duan, Y. Appl. Phys. Lett. 2019, 114, 201902. doi: 10.1063/1.5095515
[131]	Chang, C.-Y.; Lee, K.-T.; Huang, W.-K.; Siao, H.-Y.; Chang, Y.-C. Chem. Mater. 2015, 27, 5122. doi: 10.1021/acs.chemmater.5b01933
[132]	Ramos, F. J.; Maindron, T.; Béchu, S.; Rebai, A.; Frégnaux, M.; Bouttemy, M.; Rousset, J.; Schulz, P.; Schneider, N. Sustain. Energy Fuels 2018, 2, 2468. doi: 10.1039/C8SE00282G
[133]	Singh, R.; Ghosh, S.; Subbiah, A. S.; Mahuli, N.; Sarkar, S. K. Sol. Energy Mater Sol. Cells 2020, 205, 110289. doi: 10.1016/j.solmat.2019.110289
[134]	Potscavage, W. J.; Yoo, S.; Domercq, B.; Kippelen, B. Appl. Phys Lett. 2007, 90, 253511. doi: 10.1063/1.2751108
[135]	Clark, M. D.; Maschmann, M. R.; Patel, R. J.; Leever, B. J. Sol. Energy Mater Sol. Cells 2014, 128, 178. doi: 10.1016/j.solmat.2014.05.006
[136]	Vianou Irénée Madogni, M. A. Basile, Bruno Kounouhéwa,; Olivier Douhéret, R. L. Adv. Mater. Phys. Chem. 2018, 8, 321. doi: 10.4236/ampc.2018.89022
[137]	Türkmen, T. A.; Öztürk, S.; Çırpan, A.; Yerli, Y.; Aslan, E.; Mucur, S. P.; Parlak, E. A. Mater. Res. Express 2019, 6, 105108. doi: 10.1088/2053-1591/ab42a3
[138]	Choi, D.-w.; Park, J.-S. Surf. Coat. Tech. 2014, 259, 238. doi: 10.1016/j.surfcoat.2014.02.012
[139]	Ritala, M.; Leskela, M.; Rauhala, E. Chem. Mater. 1994, 6, 556. doi: 10.1021/cm00040a035
[140]	Jewel, M. U.; Mahmud, M. D. S.; Monne, M. A.; Zakhidov, A.; Chen, M. Y. RSC Adv. 2019, 9, 1841. doi: 10.1039/C8RA08470J
[141]	Mitchell, D. R. G.; Triani, G.; Attard, D. J.; Finnie, K. S.; Evans, P. J.; Barbé, C. J.; Bartlett, J. R. Smart Mater. Struct. 2005, 15, S57-S64.
[142]	Graff, G. L.; Williford, R. E.; Burrows, P. E. J. Appl. Phys. 2004, 96, 1840. doi: 10.1063/1.1768610
[143]	Chou, C.-T.; Yu, P.-W.; Tseng, M.-H.; Hsu, C.-C.; Shyue, J.-J.; Wang, C.-C.; Tsai, F.-Y. Adv. Mater. 2013, 25, 1750. doi: 10.1002/adma.v25.12
[144]	Song, S. H.; Lee, M. Y.; Lee, G. B.; Choi, B.-H. J. Vac. Sci. Technol. A 2017, 35, 01B110. doi: 10.1116/1.4967728
[145]	Li, Y.; Xiong, Y.; Yang, H.; Cao, K.; Chen, R. J. Mater. Res. 2020, 35, 681. doi: 10.1557/jmr.2019.331
[146]	Meyer, J.; Görrn, P.; Bertram, F.; Hamwi, S.; Winkler, T.; Johannes, H.-H.; Weimann, T.; Hinze, P.; Riedl, T.; Kowalsky, W. Adv. Mater. 2009, 21, 1845. doi: 10.1002/adma.v21:18
[147]	Zhao, C.; Richard, O.; Bender, H.; Caymax, M.; De Gendt, S.; Heyns, M.; Young, E.; Roebben, G.; Van Der Biest, O.; Haukka, S. Appl. Phys. Lett. 2002, 80, 2374. doi: 10.1063/1.1459765
[148]	Meyer, J.; Kröger, M.; Hamwi, S.; Gnam, F.; Riedl, T.; Kowalsky, W.; Kahn, A. Appl. Phys. Lett. 2010, 96, 193302. doi: 10.1063/1.3427430
[149]	Fukumizu, H.; Sekine, M.; Hori, M.; McIntyre, P. C. Jpn. J. Appl. Phys. 2020, 59, 016504. doi: 10.7567/1347-4065/ab6273
[150]	Meyer, J.; Schmidt, H.; Kowalsky, W.; Riedl, T.; Kahn, A. Appl. Phys. Lett. 2010, 96, 243308. doi: 10.1063/1.3455324
[151]	Seo, S.-W.; Chae, H.; Joon Seo, S.; Kyoon Chung, H.; Min Cho, S. Appl. Phys. Lett. 2013, 102, 161908. doi: 10.1063/1.4803066
[152]	Lee, W.; An, C.; Yoo, S.; Jeon, W.; Chung, M.; Kim, S. H.; Hwang, C. Phys Status Solidi (RRL) - Rapid Research Letters 2018, 12, 1800356.
[153]	Lee, U.; Choi, J.; Yang, B.; Oh, S.; Kim, Y.; Oh, M.; Heo, J.; Kim, H. J. ECS Solid State Lett. 2013, 2, R13-R15.
[154]	Park, S.-H. K.; Oh, J.; Hwang, C.-S.; Lee, J.-I.; Yang, Y. S.; Chu, H. Y. Electrochem. Solid-State Lett. 2005, 8, H21. doi: 10.1149/1.1850396
[155]	Tsai, Y.-S.; Chittawanij, A.; Juang, F.-S.; Lin, P.-C.; Hong, L.-A.; Tsai, F.-Y.; Tseng, M.-H.; Wang, C.-C.; Chen, C.-C.; Lin, K.-L.; Chen, S.-H. J. Phys. Chem. Solids 2015, 83, 135. doi: 10.1016/j.jpcs.2015.04.008
[156]	Lin, Y. Y.; Chang, Y. N.; Tseng, M. H.; Wang, C. C.; Tsai, F. Y. Nanotechnology 2015, 26, 024005. doi: 10.1088/0957-4484/26/2/024005
[157]	Jensen, J. M.; Oelkers, A. B.; Toivola, R.; Johnson, D. C.; Elam, J. W.; George, S. M. Chem. Mater 2002, 14, 2276. doi: 10.1021/cm011587z
[158]	Choi, D.-w.; Kim, S.-J.; Lee, J. H.; Chung, K.-B.; Park, J.-S. Curr. Appl. Phys. 2012, 12, S19. doi: 10.1016/j.cap.2012.02.012
[159]	Elam, J. W.; Sechrist, Z. A.; George, S. M. Thin Solid Films 2002, 414, 43. doi: 10.1016/S0040-6090(02)00427-3
[160]	Seo, S.; Jeong, S.; Bae, C.; Park, N.-G.; Shin, H. Adv. Mater. 2018, 30, 1801010. doi: 10.1002/adma.v30.29
[161]	Singh, A.; Nehm, F.; Müller-Meskamp, L.; Hoßbach, C.; Albert, M.; Schroeder, U.; Leo, K.; Mikolajick, T. Org. Electron. 2014, 15, 2587. doi: 10.1016/j.orgel.2014.07.024
[162]	Kim, L. H.; Kim, K.; Park, S.; Jeong, Y. J.; Kim, H.; Chung, D. S.; Kim, S. H.; Park, C. E. ACS Appl. Mater. Interfaces 2014, 6, 6731. doi: 10.1021/am500458d
[163]	Kim, L. H.; Jeong, Y. J.; An, T. K.; Park, S.; Jang, J. H.; Nam, S.; Jang, J.; Kim, S. H.; Park, C. E. Phys. Chem. Chem. Phys. 2016, 18, 1042. doi: 10.1039/C5CP06713H
[164]	Iatsunskyi, I.; Coy, E.; Viter, R.; Nowaczyk, G.; Jancelewicz, M.; Baleviciute, I.; Załęski, K.; Jurga, S. J. Phys. Chem C 2015, 119, 20591. doi: 10.1021/acs.jpcc.5b06745
[165]	Tripp, M. K.; Stampfer, C.; Miller, D. C.; Helbling, T.; Herrmann, C. F.; Hierold, C.; Gall, K.; George, S. M.; Bright, V. M. Sens. Actuator A: Phys. 2006, 130-131, 419. doi: 10.1016/j.sna.2006.01.029
[166]	Behrendt, A.; Meyer, J.; van de Weijer, P.; Gahlmann, T.; Heiderhoff, R.; Riedl, T. ACS Appl. Mater. Interfaces 2016, 8, 4056. doi: 10.1021/acsami.5b11499
[167]	Bulusu, A.; Singh, A.; Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kim, H.; Cullen, D.; Kippelen, B.; Graham, S. J. Appl. Phys 2015, 118, 085501. doi: 10.1063/1.4928855
[168]	Keuning, W.; Van de Weijer, P.; Lifka, H.; Kessels, W.; Creatore, M. J. Vac. Sci. Technol A 2012, 30, 01A131. doi: 10.1116/1.3664762
[169]	Kwon, J. H.; Jeong, E. G.; Jeon, Y.; Kim, D.-G.; Lee, S.; Choi, K. C. ACS Appl. Mater. Interfaces 2019, 11, 3251. doi: 10.1021/acsami.8b11930
[170]	Qin, C.; Yang, J.; Xu, T.; Ding, X.; Zhang, J. 2018 19th International Conference on Electronic Packaging Technology, IEEE, Shanghai, 2018, pp. 780-784.
[171]	Lee, Y. I.; Jeon, N. J.; Kim, B. J.; Shim, H.; Yang, T.-Y.; Seok, S. I.; Seo, J.; Im, S. G. Adv. Energ. Mater. 2018, 8, 1701928. doi: 10.1002/aenm.v8.9
[172]	Yoo, B. M.; Shin, H. J.; Yoon, H. W.; Park, H. B. J. Appl. Polym. Sci. 2014, 131, 39628.
[173]	Berry, V. Carbon 2013, 62, 1. doi: 10.1016/j.carbon.2013.05.052
[174]	Choi, K.; Nam, S.; Lee, Y.; Lee, M.; Jang, J.; Kim, S. J.; Jeong, Y. J.; Kim, H.; Bae, S.; Yoo, J.-B.; Cho, S. M.; Choi, J.-B.; Chung, H. K.; Ahn, J.-H.; Park, C. E.; Hong, B. H. ACS Nano 2015, 9, 5818. doi: 10.1021/acsnano.5b01161
[175]	Wirtz, C.; Berner, N. C.; Duesberg, G. S. Adv. Mater. Interfaces 2015, 2, 1500082. doi: 10.1002/admi.201500082
[176]	Giesbers, A. J. M.; Bouten, P. C. P.; Cillessen, J. F. M.; van der Tempel, L.; Klootwijk, J. H.; Pesquera, A.; Centeno, A.; Zurutuza, A.; Balkenende, A. R. Solid State Commun. 2016, 229, 49. doi: 10.1016/j.ssc.2016.01.002
[177]	Seo, T.; Lee, S.; Cho, H.; Chandramohan, S.; Suh, E.-K.; Lee, H.; Bae, S.; Kim, S.; Park, M.; Lee, J.; Kim, m. j. Sci. Rep.-UK 2016, 6, 24143.
[178]	Seo, H.-K.; Park, M.-H.; Kim, Y.-H.; Kwon, S.-J.; Jeong, S.-H.; Lee, T.-W. ACS Appl. Mater. Interfaces 2016, 8, 14725. doi: 10.1021/acsami.6b01639
[179]	Aria, A. I.; Kidambi, P. R.; Weatherup, R. S.; Xiao, L.; Williams, J. A.; Hofmann, S. J. Phys. Chem. C 2016, 120, 2215. doi: 10.1021/acs.jpcc.5b10492
[180]	Nam, T.; Park, Y. J.; Lee, H.; Oh, I.-K.; Ahn, J.-H.; Cho, S. M.; Kim, H.; Lee, H.-B.-R. Carbon 2017, 116, 553. doi: 10.1016/j.carbon.2017.02.023
[181]	Thiele, C.; Felten, A.; Echtermeyer, T. J.; Ferrari, A. C.; Casiraghi, C.; v. Löhneysen, H.; Krupke, R. Carbon 2013, 64, 84. doi: 10.1016/j.carbon.2013.07.038
[182]	Choi, D.-w.; Park, H.; Lim, J. H.; Han, T. H.; Park, J.-S. Carbon 2017, 125, 464. doi: 10.1016/j.carbon.2017.09.061
[183]	Steim, R.; Kogler, F. R.; Brabec, C. J. J. Mater. Chem. 2010, 20, 2499. doi: 10.1039/b921624c
[184]	Park, H.; Chang, S.; Smith, M.; Gradečak, S.; Kong, J. Sci. Rep. 2013, 3, 1581. doi: 10.1038/srep01581
[185]	Sun, F. B.; Yu, D.; Yang, Y. Q.; Chen, P.; Duan, Y. H.; Wang, X.; Yang, D.; Xue, K. W. Org. Electron. 2014, 15, 2546. doi: 10.1016/j.orgel.2014.07.004
[186]	Hwang, B.; Qaiser, N.; Lee, C.; Matteini, P.; Yoo, S. J.; Kim, H. J. Alloys Compd. 2020, 846, 156420. doi: 10.1016/j.jallcom.2020.156420
[187]	Zhang, H.; Ding, H.; Wei, M.; Li, C.; Wei, B.; Zhang, J. Nanoscale Res. Lett. 2015, 10, 169. doi: 10.1186/s11671-015-0857-8 pmid: 25977648
[188]	Danforth, B. L.; Dickey, E. R. Surf. Coat. Tech. 2014, 241, 142. doi: 10.1016/j.surfcoat.2013.09.041
[189]	Kim, H.; Ra, H. N.; Kim, M.; Kim, H. G.; Kim, S. S. Prog. Org. Coat. 2017, 108, 25.
[190]	Ghosh, A. P.; Gerenser, L. J.; Jarman, C. M.; Fornalik, J. E. Appl. Phys. Lett. 2005, 86, 223503. doi: 10.1063/1.1929867
[191]	Lee, S.; Han, J.-H.; Lee, S.-H.; Baek, G.-H.; Park, J.-S. JOM 2019, 71, 197. doi: 10.1007/s11837-018-3150-3
[192]	Kim, M.; Mackenzie, D. M. A.; Kim, W.; Isakov, K.; Lipsanen, H. Appl. Surf. Sci. 2021, 551, 149410. doi: 10.1016/j.apsusc.2021.149410
[193]	Han, Y. C.; Jeong, E. G.; Kim, H.; Kwon, S.; Im, H.-G.; Bae, B.-S.; Choi, K. C. RSC Adv. 2016, 6, 40835. doi: 10.1039/C6RA06571F
[194]	Choi, E. Y.; Kim, J.; Lim, S.; Han, E.; Ho-Baillie, A. W. Y.; Park, N. Sol. Energ. Mat. Sol. Cells 2018, 188, 37. doi: 10.1016/j.solmat.2018.08.016
[195]	Chang, C.-Y.; Chou, C.-T.; Lee, Y.-J.; Chen, M.-J.; Tsai, F.-Y. Org. Electron. 2009, 10, 1300. doi: 10.1016/j.orgel.2009.07.008

低温原子层沉积封装技术在OLED上的应用及对有机、钙钛矿太阳能电池封装的启示

Application of Low Temperature Atomic Layer Deposition Packaging Technology in OLED and Its Implications for Organic and Perovskite Solar Cell Packaging

RichHTML

PDF

Knowledge

Abstract

Cite this article

share this article

Fig. & Tab. 15

References 195

Related Articles 12

Recommended Articles

Metrics

Comments

[1]	Fengbin Zheng, Kun Wang, Tian Lin, Yinglong Wang, Guodong Li, Zhiyong Tang. Research Progress on the Preparation of Metal-Organic Frameworks Encapsulated Metal Nanoparticle Composites and Their Catalytic Applications^★ [J]. Acta Chimica Sinica, 2023, 81(6): 669-680.
[2]	Wenjun Wu, Yuting Li, Xi Feng, Wenxing Ding. Perovskite Dual-function Passivator: Room Temperature Ionic Liquid Obtained from Mechanochemical Preparation [J]. Acta Chimica Sinica, 2022, 80(11): 1469-1475.
[3]	Wang Menghan, Wan Li, Gao Xuyu, Yuan Wenbo, Fang Junfeng, Tao Youtian, Huang Wei. Synthesis of D-π-A-π-D Type Dopant-Free Hole Transporting Materials and Application in Inverted Perovskite Solar Cells [J]. Acta Chimica Sinica, 2019, 77(8): 741-750.
[4]	Yang Ying, Chen Tian, Pan Dequn, Zhang Zheng, Guo Xueyi. Research Progress of Bifacial Solar Cells with Transparent Counter Electrode [J]. Acta Chim. Sinica, 2018, 76(9): 681-690.
[5]	Guo Xudong, Niu Guangda, Wang Liduo. Chemical Stability Issue and Its Research Process of Perovskite Solar Cells with High Efficiency [J]. Acta Chim. Sinica, 2015, 73(3): 211-218.
[6]	Xue Qifan, Sun Chen, Hu Zhicheng, Huang Fei, Yip Hin-Lap, Cao Yong. Recent Advances in Perovskite Solar Cells: Morphology Control and Interfacial Engineering [J]. Acta Chimica Sinica, 2015, 73(3): 179-192.
[7]	Fu Yu, Wang Fang, Zhang Yan, Fang Xu, Lai Wenyong, Huang Wei. Research Progress of Non-Fullerene Small-Molecule Acceptor Materials for Organic Solar Cells [J]. Acta Chimica Sinica, 2014, 72(2): 158-170.
[8]	YANG Zhan-Xian, GONG Yong-Kuan. Preparation and Property of Liposome with Isonicotinyl Hydrazide Phospholipid Derivative for High Encapsulation Efficiency [J]. Acta Chimica Sinica, 2011, 69(05): 508-514.
[9]	. Preparation of Polymer Composite Particles with Encapsulated Dodecanol via Emulsion Polymerization [J]. Acta Chimica Sinica, 2008, 66(21): 2403-2408.
[10]	LI Jia-Ye WU Jin-Ping* ZHOU Cheng-Gang YAO Shu-Juan HAN Bo. Influence of Nitrogen Substituent of Amidinate Ligands to the Stability of Co(II) Bis-amidinate ALD Precursors [J]. Acta Chimica Sinica, 2008, 66(2): 165-169.
[11]	REN Jie^1,2, CHEN Wei, LU Hong-Liang, XU Min, ZHANG Wei*^,1. Density Functional Theory Study on Surface Reaction Mechanism of Atomic Layer Deposition of ZrO₂ on Si(100)-2×1 [J]. Acta Chimica Sinica, 2006, 64(11): 1133-1139.
[12]	YIN Wei*^1,2, ZHANG Xiu-Lian^1,2, ZHANG Mai-Sheng^{2. Encapsulation and Photocatalysis of Nanosized Supramolecular Materials of TiO₂/Eu-MCM [J]. Acta Chimica Sinica, 2005, 63(13): 1193-1200.}