Acta Chimica Sinica ›› 2002, Vol. 60 ›› Issue (1): 30-36. Previous Articles     Next Articles

Original Articles

不锈钢载波钝化膜的半导体性质

张俊青;乔亦男;曹楚南;张鉴清;周国定   

  1. 上海电力学院电化学研究室国家电力公司热力设备腐蚀与防护重点实验室;浙江大学化学系;中国科学院金属研究所金属腐蚀与防护国家重点实验室
  • 发布日期:2002-01-15

Semiconducting properties of passive film formed on stainless steel by using A. V. passivation

ZHANG JUNQING;QIAO YINAN;CAO CHUNAN;ZHANG JIANQING;ZHOU GUODING   

  • Published:2002-01-15

Passive film formed on 304 stainless steel in 2.5 mol/L H~2SO~4 solution by using alternating voltage (A. V. ) passivation have been investigated by measuring capacitance and photoelectrochemical parameters. The investigation of the effect of measure frequency on the slope of Mott-Schottky curve has been carried out. The photoelectrochemical measurements were consistent with the capacitance measurement. Analysis of the experimental results showed that the passive film formed 304 stainless steel by using A. V. passivation exhibits semiconducting properties. Using the simple model of semiconductor rather than the multi-donor level model can explain satisfactorily the semiconducting behavior of the film formed on 304 stainless steel by using A. V. passivation.

Key words: STAINLESS STEEL, PASSIVATION FILMS, PHOTO-ELECTROCHEMISTRY

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