Gd~2CuO~4 film was successfully deposited on Si wafer using an amorphous heteronuclear complex as precursor. XPS indicated the film was composed of Gd~2CuO~4 complicated oxide, and while XRD showed that the film had perovskite structure. AES depth profile revealed the film was homogenous with depth. The thickness of film increased with the concentration of precursor polynomially and the relationship could be described as follows: d=2.96 - 0.446(ω/%) + 0. 141(ω/%)^2. The mass fraction of precursor in solution had singnifluence on the texture of film. When the mass fraction of precursor in solution was lower than 22%, no micro-crackle was observed. The addition of PEG had practically no effects on the thickness of film, but it could improve the texture of the film.

Key words: COPPER OXIDE, CADMIUM OXIDE, DOUBLE OXIDE, THIN FILMS, PEROVSKITE TYPE STRUCTURE, X-RAY PHOTOELECTRON SPECTROMETRY, SCANNING ELECTRON MICROSCOPES