Acta Chimica Sinica ›› 2010, Vol. 68 ›› Issue (20): 2077-2085. Previous Articles     Next Articles

Special Topic

Ti, V, Nb掺杂MgH2储氢体系的放氢性能及微观机理

张健*,1,黄雅妮2,毛聪1,龙春光1,邵毅敏1付俊庆1,彭平2   

  1. (1长沙理工大学汽车与机械工程学院 长沙 410114)
    (2湖南大学材料科学与工程学院 长沙 410082)
  • 投稿日期:2010-05-02 修回日期:2010-06-18 发布日期:2010-07-13
  • 通讯作者: 张健 E-mail:zj4343@163.com
  • 基金资助:

    镁基氢化物吸放氢性能的第一性原理及实验研究

Dehydrogenation Properties and Micromechanisms of MgH2 Hydrogen Storage Systems with Ti, V or Nb Doping

Zhang Jian*,1 Huang Yani2 Mao Cong1 Long Chunguang1 Shao Yimin1 Fu Junqing1 Peng Ping2   

  1. (1 Institute of Automobile and Mechanical Engineering, Changsha University of Science and Technology, Changsha 410114)
    (2 College of Materials Science and Engineering, Hunan University, Changsha 410082)
  • Received:2010-05-02 Revised:2010-06-18 Published:2010-07-13
  • Contact: Jian ZHANG E-mail:zj4343@163.com

Using the pseudopotential plane-wave method based on density functional theory, the geometrical configuration, energetics and electronic structures of MgH2 hydrogen storage systems with transition metals Ti, V or Nb doping have been calculated. The doping atom of Ti, V or Nb exhibits more notable affinity with hydrogen as compared with Mg atom. The bonding strength of Mg—H is weakened when the doping atom pulls nearby hydrogen atoms toward itself. Due to the doping of Ti, V or Nb, the structural stabilities of MgH2 systems are decreased and their dehydrogenation properties are improved, as well as, the dehydrogenation abilities of doped systems are increased gradually in order of MgH2-Ti, MgH2-V and MgH2-Nb systems. The clusters of hydrides formed from doping atoms and hydrogen play significant catalytic role in improving the dehydrogenation properties of MgH2 systems. The micromechanisms of improved properties lie in the narrowing of the energy gap near Fermi energy level, the decreasing of bonding electrons number as well as the weakening of H—Mg interactions in doped systems.

Key words: MgH2, pseudopotential plane-wave, dehydrogenation property, electronic structure