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Photoelectrochemical Properties of Graphene Oxide Film

  • WANG Ji-Xue ,
  • WANG Ke-Zhi ,
  • YANG Hong-Qiang ,
  • HUANG Zhe
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  • (College of Chemistry, Beijing Normal University, Beijing 100875)

Received date: 2011-04-02

  Revised date: 2011-05-25

  Online published: 2011-06-03

Abstract

Graphene oxide (GO) was prepared using a modified Hummers approach, and deposited by electrostatically assembly technique onto protonated indium-tin oxide (ITO) coated glass substrate. The thus-formed GO thin film was characterized by using UV-visible absorption spectroscopy and scanning electron microscopy. The GO coated ITO electrode in 0.1 mol•L-1 Na2SO4 was also subjected to photoelectrochemical studies, and was found to exhibit stable cathodic photocurrent density of 3.72 μA/cm2 under white light irradiance of 100 mW/cm2 and -0.4 V bias voltage.

Cite this article

WANG Ji-Xue , WANG Ke-Zhi , YANG Hong-Qiang , HUANG Zhe . Photoelectrochemical Properties of Graphene Oxide Film[J]. Acta Chimica Sinica, 2011 , 69(21) : 2539 -2542 . DOI: 10.6023/A1104022Q

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