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Acta Chimica Sinica >

2015 , Vol. 73 >Issue 9: 924 - 935

DOI: https://doi.org/10.6023/A15040280

Review

Electric-double-layer Transistors Based on Two Dimensional Materials

  • He Xuexia ,
  • Liu Fucai ,
  • Zeng Qingsheng ,
  • Liu Zheng
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  • a School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore;
    b School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

Received date: 2015-08-18

  Online published: 2015-09-15

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Abstract

Over the past years, two-dimensional (2D) nanomaterials especially transition metal dichalcogenides (TMDs) have emerged as promising semiconductor materials to complement graphene-based electronics. They grain lots of attention due to their large number of candidates and varieties of physical properties. In this family, there are a wide range of materials exists ranging from Mott insulator semiconductor, metal, even to superconductor. Some of them, e.g. MoS2, MoSe2, WS2 and WSe2 have been widely investigated in these years, and they show unique properties for artificial van der Waals solids, electronics with ultra-low energy consumption, valleytronics, non-linear optics and high performance catalyst for hydrogen evolution reaction, while many of them still await a thorough theoretical and experimental exploration. Scientists in this field have try their best to modify the properties of this unique family. Charge carrier control is a key issue in the development of electronic functions of semiconductive materials. Beyond the simple enhancement of conductivity, high charge carrier accumulation can realize various phenomena, such as chemical reaction, phase transition, magnetic ordering, and superconductivity. In 2007, Hebard et al. reported the first electric-double-layer transistors (EDLT) using ionic liquid as the gate dielectric, the mobility was increased by 3 cm2·V－1·s－1 than the traditional transistor, this was the first demonstration that EDLT can be used to enhance the performance such as the mobility and the operation voltage of the devices. After that work, many works have been done using EDLT method. Very recently, scientists found that EDLT is also applicable for modifying the electronic properties of both organic and inorganic materials by control the charge carriers in the interface of the EDLT. Based on this method, high transistor performance, insulator-metal transitions, superconductivity, and even ferromagnetism have been released. In this review, we introduce and review the recent work for modifying the electronic properties based on 2D TMD materials.

Key words： electric double layer transistor; field effect transistor; ionic liquid; two-dimensional materials; transition metal dichalcogenides; superconductor

Cite this article

He Xuexia , Liu Fucai , Zeng Qingsheng , Liu Zheng . Electric-double-layer Transistors Based on Two Dimensional Materials[J]. Acta Chimica Sinica, 2015 , 73(9) : 924 -935 . DOI: 10.6023/A15040280

References

[1] Sipos, B.; Kusmartseva, A. F.; Akrap, A.; Berger, H.; Forro, L.; Tutis, E. Nat. Mater. 2008, 7, 960.
[2] Butler, S. Z.; Hollen, S. M.; Cao, L.; Cui, Y.; Gupta, J. A.; Gutiérrez, H. R.; Heinz, T. F.; Hong, S. S.; Huang, J.; Ismach, A. F.; Johnston-Halperin, E.; Kuno, M.; Plashnitsa, V. V.; Robinson, R. D.; Ruoff, R. S.; Salahuddin, S.; Shan, J.; Shi, L.; Spencer, M. G.; Terrones, M.; Windl, W.; Goldberger, J. E. ACS Nano 2013, 7, 2898.
[3] Chhowalla, M.; Shin, H. S.; Eda, G.; Li, L.-J.; Loh, K. P.; Zhang, H. Nat. Chem. 2013, 5, 263.
[4] Mas-Balleste, R.; Gomez-Navarro, C.; Gomez-Herrero, J.; Zamora, F. Nanoscale 2011, 3, 20.
[5] Tay, R. Y.; Griep, M. H.; Mallick, G.; Tsang, S. H.; Singh, R. S.; Tumlin, T.; Teo, E. H.; Karna, S. P. Nano Lett. 2014, 14, 839.
[6] Wang, M.; Jang, S. K.; Jang, W.-J.; Kim, M.; Park, S.-Y.; Kim, S.-W.; Kahng, S.-J.; Choi, J.-Y.; Ruoff, R. S.; Song, Y. J.; Lee, S. Adv. Mater. 2013, 25, 2746.
[7] Roy, T.; Tosun, M.; Kang, J. S.; Sachid, A. B.; Desai, S. B.; Hettick, M.; Hu, C. C.; Javey, A. ACS Nano 2014, 8, 6259.
[8] Najmaei, S.; Zou, X.; Er, D.; Li, J.; Jin, Z.; Gao, W.; Zhang, Q.; Park, S.; Ge, L.; Lei, S.; Kono, J.; Shenoy, V. B.; Yakobson, B. I.; George, A.; Ajayan, P. M.; Lou, J. Nano Lett. 2014, 14, 1354.
[9] Perera, M. M.; Lin, M.-W.; Chuang, H.-J.; Chamlagain, B. P.; Wang, C.; Tan, X.; Cheng, M. M.-C.; Tománek, D.; Zhou, Z. ACS Nano 2013, 7, 4449.
[10] Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Nat. Nanotechnol. 2011, 6, 147.
[11] Ferrari, A. C.; Bonaccorso, F.; Fal'ko, V.; Novoselov, K. S.; Roche, S.; Boggild, P.; Borini, S.; Koppens, F. H. L.; Palermo, V.; Pugno, N.; Garrido, J. A.; Sordan, R.; Bianco, A.; Ballerini, L.; Prato, M.; Lidorikis, E.; Kivioja, J.; Marinelli, C.; Ryhanen, T.; Morpurgo, A.; Coleman, J. N.; Nicolosi, V.; Colombo, L.; Fert, A.; Garcia-Hernandez, M.; Bachtold, A.; Schneider, G. F.; Guinea, F.; Dekker, C.; Barbone, M.; Sun, Z.; Galiotis, C.; Grigorenko, A. N.; Konstantatos, G.; Kis, A.; Katsnelson, M.; Vandersypen, L.; Loiseau, A.; Morandi, V.; Neumaier, D.; Treossi, E.; Pellegrini, V.; Polini, M.; Tredicucci, A.; Williams, G. M.; Hee Hong, B.; Ahn, J.-H.; Min Kim, J.; Zirath, H.; van Wees, B. J.; van der Zant, H.; Occhipinti, L.; Di Matteo, A.; Kinloch, I. A.; Seyller, T.; Quesnel, E.; Feng, X.; Teo, K.; Rupesinghe, N.; Hakonen, P.; Neil, S. R. T.; Tannock, Q.; Lofwander, T.; Kinaret, J. Nanoscale 2015, 7, 4598.
[12] Zou, Z. Y.; Dai, B. Y.; Liu, Z. F. Sci. China 2013, 43, 1. (邹志宇, 戴博雅, 刘忠范, 中国科学, 2013, 43, 1.)
[13] Hu, Y. J.; Jin, J.; Zhang, H.; Wu, P.; Cai, C. X. Acta Phys.-Chim. Sin. 2010, 26, 2073. (胡耀娟, 金娟, 张卉, 吴萍, 蔡称心, 物理化学学报, 2010, 26, 2073.)
[14] Fu, Q.; Bao, X. H. Chinese Sci. Bull. 2009, 54, 2657. (傅强, 包信合, 科学通报, 2009, 54, 2657.)
[15] Novoselov, K. S.; Jiang, D.; Schedin, F.; Booth, T. J.; Khotkevich, V. V.; Morozov, S. V.; Geim, A. K. Proc. Natl. Acad. Sci. U. S. A. 2005, 102, 10451.
[16] Kubota, Y.; Watanabe, K.; Tsuda, O.; Taniguchi, T. Chem. Mater. 2008, 20, 1661.
[17] Yin, Z.; Li, H.; Li, H.; Jiang, L.; Shi, Y.; Sun, Y.; Lu, G.; Zhang, Q.; Chen, X.; Zhang, H. ACS Nano 2011, 6, 74.
[18] Kim, H.; Ahn, C.; Arabale, G.; Lee, C.; Kim, T. ECS Trans. 2013, 58, 47.
[19] Amani, M.; Chin, M. L.; Birdwell, A. G.; O'Regan, T. P.; Najmaei, S.; Liu, Z.; Ajayan, P. M.; Lou, J.; Dubey, M. Appl. Phys. Lett. 2013, 102, 193107.
[20] Wu, W.; De, D.; Chang, S.-C.; Wang, Y.; Peng, H.; Bao, J.; Pei, S.-S. Appl. Phys. Lett. 2013, 102, 142106.
[21] Taniguchi, K.; Matsumoto, A.; Shimotani, H.; Takagi, H. Appl. Phys. Lett. 2012, 101, 042603.
[22] Ye, J. T.; Zhang, Y. J.; Akashi, R.; Bahramy, M. S.; Arita, R.; Iwasa, Y. Science 2012, 338, 1193.
[23] Yuan, H. T.; Toh, M.; Morimoto, K.; Tan, W.; Wei, F.; Shimotani, H.; Kloc, C.; Iwasa, Y. Appl. Phys. Lett. 2011, 98, 012102.
[24] Ueno, K.; Nakamura, S.; Shimotani, H.; Ohtomo, A.; Kimura, N.; Nojima, T.; Aoki, H.; Iwasa, Y.; Kawasaki, M. Nat. Mater. 2008, 7, 855.
[25] Ueno, K.; Nakamura, S.; Shimotani, H.; Yuan, H. T.; Kimura, N.; Nojima, T.; Aoki, H.; Iwasa, Y.; Kawasaki, M. Nat. Nanotechnol. 2011, 6, 408.
[26] Fujimoto, T.; Awaga, K. Phys. Chem. Chem. Phys. 2013, 15, 8983.
[27] Revolinsky, E.; Lautenschlager, E. P.; Armitage, C. H. Solid State Commun. 1963, 1, 59.
[28] Sanchez, D.; Junod, A.; Muller, J.; Berger, H.; Lévy, F. Physica B Condens. Matter 1995, 204, 167.
[29] Matthias, B. T.; Geballe, T. H.; Compton, V. B. Rev. Mod. Phys. 1963, 35, 1.
[30] Woollam, J. A.; Somoano, R. B. Phys. Rev. B 1976, 13, 3843.
[31] Sipos, B.; Kusmartseva, A. F.; Akrap, A.; Berger, H.; Forro, L.; Tutis, E. Nat. Mater. 2008, 7, 960.
[32] Taniguchi, K.; Matsumoto, A.; Shimotani, H.; Takagi, H. Appl. Phys. Lett. 2012, 101, 042603.
[33] Ye, J. T.; Inoue, S.; Kobayashi, K.; Kasahara, Y.; Yuan, H. T.; Shimotani, H.; Iwasa, Y. Nat. Mater. 2010, 9, 125.
[34] Grahame, D. C. Chem. Rev. 1947, 41, 441.
[35] Parsons, R. Chem. Rev. 1990, 90, 813.
[36] Sparnaay, M. J. Adv. Colloid Interface Sci. 1967, 1, 278.
[37] Helmholtz, H. Annalen der Physik 1853, 165, 211.
[38] Ueno, K.; Nakamura, S.; Shimotani, H.; Nojima, T.; Iwasa, Y.; Kawasaki, M. Proc. SPIE 2011, 26, 7940.
[39] Ye, J. T.; Inoue, S.; Kobayashi, K.; Kasahara, Y.; Yuan, H. T.; Shimotani, H.; Iwasa, Y. Physica C 2010, 470, S682.
[40] Tongay, S.; Sahin, H.; Ko, C.; Luce, A.; Fan, W.; Liu, K.; Zhou, J.; Huang, Y.-S.; Ho, C.-H.; Yan, J.; Ogletree, D. F.; Aloni, S.; Ji, J.; Li, S.; Li, J.; Peeters, F. M.; Wu, J. Nat. Commun. 2014, 5, 3252.
[41] Ono, S.; Miwa, K.; Seki, S.; Takeya, J. Appl. Phys. Lett. 2009, 94, 063301.
[42] Nakamura, H.; Takagi, H.; Inoue, I. H.; Takahashi, Y.; Hasegawa, T.; Tokura, Y. Appl. Phys. Lett. 2006, 89, 133504.
[43] Nomura, K.; Kamiya, T.; Ohta, H.; Ueda, K.; Hirano, M.; Hosono, H. Appl. Phys. Lett. 2004, 85, 1993.
[44] Larentis, S.; Fallahazad, B.; Tutuc, E. Appl. Phys. Lett. 2012, 101, 223104.
[45] Hebard, A. F.; Fiory, A. T.; Eick, R. IEEE Trans. Magn. 1987, 23, 1279.
[46] Misra, R.; McCarthy, M.; Hebard, A. F. Appl. Phys. Lett. 2007, 90, 052905.
[47] Yuan, H.; Shimotani, H.; Tsukazaki, A.; Ohtomo, A.; Kawasaki, M.; Iwasa, Y. Adv. Funct. Mater. 2009, 19, 1046.
[48] Kang, M. S.; Sahu, A.; Norris, D. J.; Frisbie, C. D. Nano Lett. 2010, 10, 3727.
[49] Pu, J.; Yomogida, Y.; Liu, K.-K.; Li, L.-J.; Iwasa, Y.; Takenobu, T. Nano Lett. 2012, 12, 4013.
[50] Zhang, Y.; Ye, J.; Matsuhashi, Y.; Iwasa, Y. Nano Lett. 2012, 12, 1136.
[51] Kwak, J. Y.; Hwang, J.; Calderon, B.; Alsalman, H.; Munoz, N.; Schutter, B.; Spencer, M. G. Nano Lett. 2014, 14, 4511.
[52] Cho, A. J.; Yang, S.; Park, K.; Namgung, S. D.; Kim, H.; Kwon, J. Y. ECS Solid State Lett. 2014, 3, Q67.
[53] Braga, D.; Gutiérrez Lezama, I.; Berger, H.; Morpurgo, A. F. Nano Lett. 2012, 12, 5218.
[54] Kitazawa, K. Jpn. J. Appl. Phys. 2012, 51, 010001.
[55] Lvovsky, Y.; Jarvis, P. IEEE Trans. Appl. Supercond. 2005, 15, 1317.
[56] Ahn, C. H.; Triscone, J. M.; Mannhart, J. Nature 2003, 424, 1015.
[57] Ono, M.; Koga, S.; Ohtsuki, H. IEEE Instru. Meas. Mag. 2002, 5, 9.
[58] Prassides, K. Nat. Mater. 2010, 9, 96.
[59] Woollam, J. A.; Somoano, R. B. Phys. Rev. B 1976, 13, 3843.
[60] Saito, Y.; Iwasa, Y. ACS Nano 2015, 9, 3192.
[61] Yu, Y.; Yang, F.; Lu, X. F.; Yan, Y. J.; ChoYong, H.; Ma, L.; Niu, X.; Kim, S.; Son, Y.-W.; Feng, D.; Li, S.; Cheong, S.-W.; Chen, X. H.; Zhang, Y. Nat. Nanotechnol. 2015, 10, 270.
[62] Jo, S.; Costanzo, D.; Berger, H.; Morpurgo, A. F. Nano Lett. 2015, 15, 1197.
[63] Pan, X.-C.; Chen, X.; Liu, H.; Feng, Y.; Wei, Z.; Zhou, Y.; Chi, Z.; Pi, L.; Yen, F.; Song, F.; Wan, X.; Yang, Z.; Wang, B.; Wang, G.; Zhang, Y. Nat. Commun. 2015, 6, 7805.
[64] Shi, W.; Ye, J.; Zhang, Y.; Suzuki, R.; Yoshida, M.; Miyazaki, J.; Inoue, N.; Saito, Y.; Iwasa, Y. Sci. Rep. 2015, 5, 12534.
[65] Schilling, A.; Cantoni, M.; Guo, J. D.; Ott, H. R. Nature 1993, 363, 56.
[66] Bednorz, J. G.; Muller, K. A. Physica 1987, 148B, 166.
[67] Wu, M. K.; Ashburn, J. R.; Torng, C. J.; Hor, P. H.; Meng, R. L.; Gao, L.; Huang, Z. J.; Wang, Y. Q.; Chu, C. W. Phys. Rev. Lett. 1987, 58, 908.
[68] Jariwala, D.; Sangwan, V. K.; Lauhon, L. J.; Marks, T. J.; Hersam, M. C. ACS Nano 2014, 8, 1102.

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