Resistive Memory Materials Based on Transition-Metal Complexes
Received date: 2016-08-02
Online published: 2016-09-06
Supported by
Project supported by the National Natural Science Foundation of China (grants 21271176, 21472196, 21521062, and 21501183), the Ministry of Science and Technology of China (grant 2012YQ120060), and the Strategic Priority Research Program of the Chinese Academy of Sciences (grant XDB 12010400).
A resistive memory operates as an electrical switch between high and low conductivity states (or multistates) in response to an external electric field. Due to the high capacity, high flexibility, good scalability, low cost, and low power consumption, resistive memory is promising for the next-generation high-density data storage. In addition to inorganic metal oxides, carbon nanomaterials, organic small molecular and polymeric semiconductor materials, transition-metal complexes have recently received much attention as active materials for resistive memory. In this contribution, the applications of transition-metal complexes in resistive memory reported to date are summarized and discussed, mainly including group VⅢ [Fe(Ⅱ), Ru(Ⅱ), Co(Ⅲ), Rh(Ⅲ), Ir(Ⅲ), and Pt(Ⅱ) complexes], group IB and ⅡB [Cu(Ⅱ), Au(Ⅲ), and Zn(Ⅱ) complexes], and lanthanide complexes [mainly Eu(Ⅲ) complexes]. The memory behavior and mechanism of these materials will be discussed. Transition-metal complexes often possess well-defined and reversible redox processes. The frontier energy levels and gaps can be easily modulated by changing the structures of ligands and metal species, which is beneficial for generating electrical bistates or multistates when they are used in resistive memory devices. These features make transition-metal complexes potentially useful as memory materials in practical applications.
Cui Bin-Bin , Tang Jian-Hong , Zhong Yu-Wu . Resistive Memory Materials Based on Transition-Metal Complexes[J]. Acta Chimica Sinica, 2016 , 74(9) : 726 -733 . DOI: 10.6023/A16080384
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