1 引言
2 结果与讨论
2.1 二维MXene的制备与表征
图2 不同剥离时间下Ti3C2Tx的(a) XRD图谱, (b)小角衍射XRD图谱, (c) Raman光谱, (d) FT-IR光谱, (e) UV-vis吸收光谱和(f)产率图Figure 2 (a) XRD patterns, (b) XRD patterns of small angle diffraction, (c) Raman spectra, (d) FT-IR spectra, (e) UV-vis absorbance spectra and (f) yields of Ti3C2Tx at different exfoliated times |
2.2 Ti3C2Tx在柔性透明对称器件中的性能研究
图4 不同浓度下Ti3C2Tx电极的(a)透光率对比图(插图为实物数码照片); (b)扫描速率为100 mV•s-1时的CV曲线; (c)电流密度为50 μA•cm-2时的GCD曲线; (d)方阻图. Ti3C2Tx-1.5电极的(e)不同扫描速率下的CV曲线和(f)不同电流密度下的GCD曲线Figure 4 Comparisons of different Ti3C2Tx electrodes: (a) optical transmittances (insets are digital photographs); (b) CV curves with a scan rate of 100 mV•s-1; (c) GCD curves with a current density of 50 μA•cm-2; (d) Square resistance plots. Ti3C2Tx-1.5 electrode: (e) CV curves at different scan rates; (f) GCD curves at different current densities |
图5 三明治结构Ti3C2Tx对称器件的电化学性能: (a) CV曲线; (b) GCD曲线; (c) EIS图谱; (d) 不同弯曲角度的CV曲线(扫描速率150 mV•s-1); (e) 不同弯曲角度的GCD曲线(电流密度75 µA•cm-2); (f) 由GCD曲线计算出的不同弯曲角度下的电容保持率; (g)器件的循环稳定性测试; 单个器件与两个器件串/并联的(h) CV曲线和(i) GCD曲线Figure 5 Electrochemical performance of sandwich-type symmetric device based on Ti3C2Tx electrodes: (a) CV curves at different scanning rates; (b) GCD curves at different current densities; (c) EIS plots; (d) CV curves under different bending angle (scan rate of 150 mV•s-1); (e) GCD curves under different bending angles (current density of 75 µA•cm-2); (f) Capacitance retention at different bending angles calculated from GCD curves; (g) Cyclic stability testing of devices; (h) CV curves of single device and series/parallel devices; (i) GCD curves of single device and series/parallel device |
2.3 Ti3C2Tx在柔性透明ZHSCs中的性能研究
图6 非对称混合器件ZHSC-30的电化学性能: (a)不同扫描速率下的CV曲线; (b)不同电流密度下的GCD曲线; (c)在600 µA•cm-2电流密度下的电容保持率(插图: 循环第1次和第1000次的GCD曲线); 在不同弯曲角度下的(d) CV曲线和(e)电容保持率(插图: GCD曲线); (f)不同透明器件的Ragone图Figure 6 Electrochemical performance of asymmetric ZHSC-30 device: (a) CV curves under different scanning rates; (b) GCD curves at different current densities; (c) Capacitance retention at a current density of 600 µA•cm-2 (inset: GCD curves for 1st and 1000th cycles); (d) CV curves at different bending angles; (e) Capacitance retention (inset: GCD curves); (f) Ragone plots of ZHSC-30 with other reported transparent supercapacitors |