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化学学报
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化学学报 ›› 2012, Vol. 70 ›› Issue (08): 961-967.DOI: 10.6023/A1107195 上一篇    下一篇

研究论文

自组装超薄膜修饰Ta2O5 介质膜及其特性研究

杨亚杰, 徐建华, 蒋亚东, 闻俊峰   

  1. 电子薄膜与集成器件国家重点实验室 电子科技大学光电信息学院 成都 610054
  • 投稿日期:2011-07-19 修回日期:2011-11-20 发布日期:2011-12-06
  • 通讯作者: 杨亚杰 E-mail:jj_eagle@163.com
  • 基金资助:

    国家自然科学基金(No. 61101029)和中央高校科研基本业务费(No. ZYGX2010J057)资助项目.

Preparation and Characterization of Ta2O5 Films Surface Modified by Electrostatic Self-assembly Ultrathin Films

Yang Yajie, Xu Jianhua, Jiang Yadong, Wen Junfeng   

  1. State Key Lab of Electronic Thin Films & Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China UESTC, Chengdu 610054
  • Received:2011-07-19 Revised:2011-11-20 Published:2011-12-06
  • Supported by:

    Project supported by the National Natural Science Foundation of China (No. 61101029) and the Fundamental Research Funds for the Central Universities (No. ZYGX2010J057).

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采用静电自组装方法在五氧化二钽(Ta2O5)介质氧化膜上制备了聚二烯丙基二甲基氯化铵(PDDA)/聚苯乙烯磺酸钠(PSS)和聚二烯丙基二甲基氯化铵/聚-3,4-乙烯二氧噻吩-聚苯乙烯磺酸钠(PEDOT-PSS)超薄膜. 研究了两种自组装超薄膜在Ta2O5 介质氧化薄膜上的组装特性. 结果表明两种自组装膜能够稳定地组装于Ta2O5 介质膜表面, 并有效降低薄膜的表面粗糙度. 进一步研究了两种自组装超薄膜修饰的Ta2O5 电容结构的电性能. 结果表明静电自组装膜对Ta2O5 介质膜表面进行修饰后, 有效地隔离了介质氧化膜中的缺陷, 降低了电容的漏电流并提高耐电压能力; 研究还发现不同厚度的超薄膜对Ta2O5 电容结构的耐压特性有不同程度的影响, 较厚的薄膜可以更好地提高电容的耐压能力并降低漏电流, 但会增加电容的等效串联电阻(ESR). 另外, 在相同薄膜层数的情况下, 聚合物电解质PEDOT-PSS 良好的导电性能降低了复合超薄膜的电阻, 使得PDDA/PEDOT-PSS 修饰的电容结构ESR 值较低.

关键词: 静电自组装, Ta2O5, 耐压能力, 等效串联电阻, 漏电流

Ultrathin films of poly-diallyldimethylammonium chloride (PDDA)/polystyrene sulfonate (PSS) and PDDA/poly(3,4-ethylene dioxythiophene)-polystyrene sulfonate (PEDOT-PSS) were constructed on Ta2O5 films through layer-by-layer electrostatic self-assembly (ESA) method for a surface modification purpose. The self-assembly ability of PDDA/PSS and PDDA/PEDOT-PSS ultrathin films on Ta2O5 film was investigated. The results showed that the ESA ultrathin films can be constructed on Ta2O5 film surface with a layer-by-layer deposition method, and the Ta2O5 film covered with ESA film exhibited smoother surface roughness compared with Ta2O5 film without surface modification. Moreover, the electronic performance of Ta/Ta2O5/ESA films/polymer film capacitor structure was investigated. The results revealed that the capacitor composed of ultrathin ESA film exhibited better anti-voltage endurance ability and less leakage current, which resulted from the isolation of leakage current channel in Ta2O5 films because of surface coverage of ultrathin ESA film on Ta2O5. It also can be found that the thicker ultrathin ESA film for surface modification resulted in better anti-voltage endurance ability and higher equivalent series resistance (ESR) of Ta2O5 capacitor. The further investigation confirmed that lower ESR of capacitor composed of PDDA/PEDOT-PSS ESA films because of high conductive ability of PEDOT-PSS.

Key words: electrostatic self-assembly, Ta2O5, anti-voltage endurance ability, equivalent series resistor, leakage current