化学学报 ›› 2015, Vol. 73 ›› Issue (9): 886-894.DOI: 10.6023/A15030187 上一篇    下一篇

所属专题: 非碳基二维材料

综述

二维半导体合金的制备、结构和性质

王新胜a, 谢黎明a, 张锦b   

  1. a 国家纳米科学中心中国科学院纳米标准与检测重点实验室 北京 100190;
    b 北京大学化学与分子工程学院 北京 100871
  • 收稿日期:2015-03-17 出版日期:2015-09-15 发布日期:2015-05-22
  • 通讯作者: 谢黎明 E-mail:xielm@nanoctr.cn
  • 基金资助:

    项目受国家自然科学基金(NSFC) (Nos. 21373066, 11304052)、北京市科技新星计划(No. 2015B049)和中国博士后科学基金(No. 2013M540900)资助.

Preparation, Structure and Properties of Two-dimensional Semiconductor Alloys

Wang Xinshenga, Xie Liminga, Zhang Jinb   

  1. a CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190;
    b College of Chemistry and Molecular Engineering, Peking University, Beijing 100871
  • Received:2015-03-17 Online:2015-09-15 Published:2015-05-22
  • Supported by:

    Project supported by the National Natural Science Foundation of China (NSFC) (Nos. 21373066 and 11304052), the Beijing Nova Program (No. 2015B049) and China Postdoctoral Science Foundation (No. 2013M540900).

原子层厚度的二维半导体材料因具有特殊的低维效应而被广泛研究. 面向光电器件应用, 需要可控调节二维半导体材料的能带结构, 包括带隙、价带/导带位置等. 合金方法是一种调控半导体能带的通用方法. 本综述介绍了近几年来二维半导体合金材料的研究进展, 包括材料的热力学稳定性、可控制备、结构表征和性质研究. 介绍的材料体系是过渡金属二硫族化物的单层合金材料, 金属元素主要是第六副族的Mo和W, 硫族元素主要是S和Se.

关键词: 二维半导体合金, 过渡金属二硫族化合物, 能带调控, 微区光谱, 纳米器件

Atomically thick two-dimensional (2D) semiconducting materials have attract broad interest because of their low-dimensional effect. Towards optoelectronic applications, 2D semiconducting materials with tunable band structures (such as tunable band gaps, conducting band and valence band positions) are favored. Alloying is a general approach to tune the band structures. Here, this review introduces the research progresses on 2D semiconductor alloys in recent years, including their thermodynamic stability, controlled preparation, structure characterization and property investigation. The transition- metal dichalcogenide monolayer alloys, mainly Mo, W metal elements and S, Se dichalcogenide elements is focused.

Key words: 2D semiconductor alloy, transition-metal dichalcogenide, band engineering, micro spectroscopy, nano device