Acta Chim. Sinica ›› 2016, Vol. 74 ›› Issue (9): 726-733.DOI: 10.6023/A16080384 Previous Articles     Next Articles

Review

基于过渡金属配合物的阻变存储材料

崔彬彬a,b, 唐健洪a,b, 钟羽武a,b   

  1. a 中国科学院化学研究所 光化学重点实验室 北京 100190;
    b 中国科学院大学 化学与化工学院 北京 100049
  • 收稿日期:2016-08-02 出版日期:2016-09-10 发布日期:2016-09-06
  • 通讯作者: 钟羽武 E-mail:zhongyuwu@iccas.ac.cn
  • 基金资助:

    项目受国家自然科学基金(21271176,21472196,21521062,21501183),科技部重大仪器设备开发专项(2012YQ120060),中科院先导B(XDB12010400)项目资助.

Resistive Memory Materials Based on Transition-Metal Complexes

Cui Bin-Bina,b, Tang Jian-Honga,b, Zhong Yu-Wua,b   

  1. a CAS Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190;
    b College of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing 100049
  • Received:2016-08-02 Online:2016-09-10 Published:2016-09-06
  • Supported by:

    Project supported by the National Natural Science Foundation of China (grants 21271176, 21472196, 21521062, and 21501183), the Ministry of Science and Technology of China (grant 2012YQ120060), and the Strategic Priority Research Program of the Chinese Academy of Sciences (grant XDB 12010400).

A resistive memory operates as an electrical switch between high and low conductivity states (or multistates) in response to an external electric field. Due to the high capacity, high flexibility, good scalability, low cost, and low power consumption, resistive memory is promising for the next-generation high-density data storage. In addition to inorganic metal oxides, carbon nanomaterials, organic small molecular and polymeric semiconductor materials, transition-metal complexes have recently received much attention as active materials for resistive memory. In this contribution, the applications of transition-metal complexes in resistive memory reported to date are summarized and discussed, mainly including group VⅢ [Fe(Ⅱ), Ru(Ⅱ), Co(Ⅲ), Rh(Ⅲ), Ir(Ⅲ), and Pt(Ⅱ) complexes], group IB and ⅡB [Cu(Ⅱ), Au(Ⅲ), and Zn(Ⅱ) complexes], and lanthanide complexes [mainly Eu(Ⅲ) complexes]. The memory behavior and mechanism of these materials will be discussed. Transition-metal complexes often possess well-defined and reversible redox processes. The frontier energy levels and gaps can be easily modulated by changing the structures of ligands and metal species, which is beneficial for generating electrical bistates or multistates when they are used in resistive memory devices. These features make transition-metal complexes potentially useful as memory materials in practical applications.

Key words: resistive memory, information storage, transition-metal complexes, optoelectronic devices, optoelectronic materials