Acta Chimica Sinica ›› 2022, Vol. 80 ›› Issue (6): 797-804.DOI: 10.6023/A21120605 Previous Articles     Next Articles



闫彬, 薛丁江*(), 胡劲松   

  1. 中国科学院化学研究所 分子纳米结构与纳米技术院重点实验室 北京 100190
  • 投稿日期:2021-12-30 发布日期:2022-07-07
  • 通讯作者: 薛丁江
  • 作者简介:

    闫彬, 北京工业大学材料与制造学部在读博士生, 2021年进入中国科学院化学研究所胡劲松研究员和薛丁江研究员团队联合培养. 研究方向为无机薄膜太阳能电池.

    薛丁江, 中国科学院化学研究所研究员. 研究方向为无机薄膜太阳能电池, 具体包括GeSe、GeS及无机钙钛矿薄膜太阳能电池.

    胡劲松, 中国科学院化学研究所研究员. 主要从事氢能非贵金属电催化和低成本薄膜太阳能电池研究.

  • 基金资助:
    国家自然科学基金(21922512); 国家自然科学基金(21875264)

Recent Progress in GeSe Thin-Film Solar Cells

Bin Yan, Ding-Jiang Xue(), Jin-Song Hu   

  1. CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190
  • Received:2021-12-30 Published:2022-07-07
  • Contact: Ding-Jiang Xue
  • About author:
    Dedicated to the 10th anniversary of the Youth Innovation Promotion Association, CAS.
  • Supported by:
    National Natural Science Foundation of China(21922512); National Natural Science Foundation of China(21875264)

Germanium monoselenide (GeSe) is a promising photovoltaic absorber material for thin-film solar cells due to its appropriate bandgap (about 1.14 eV), high absorption coefficient (>105 cm–1 at visible light), large carrier mobility (about 128.7 cm2•V–1•s–1) and benign defect properties arising from its antibonding states at the valence band maximum. The theoretical Shockley-Quiesser efficiency limit for GeSe single junction solar cells determined by its bandgap is above 30%. Moreover, this simple binary compound possesses earth-abundant, nontoxic constituents and high stability in ambient atmosphere. The easy sublimation feature of GeSe enables the deposition of high-quality films through an industrial close-space sublimation method. The fundamental properties of GeSe with emphasis on the material, optical, electrical, and defect properties are introduced, and then the recent progress of fabrication of GeSe thin films and solar cells is summarized. Finally, a brief perspective on the further development of GeSe thin-film solar cells is provided.

Key words: GeSe, solar cells, photovoltaics, thin-film fabrication, defect property