化学学报 ›› 1980, Vol. 38 ›› Issue (5): 441-449. 上一篇    下一篇

论文

痕量砷在金膜电极上阳极溶出伏安法的研究

邓家祺, 陈晓明, 何佩鑫   

  1. 复旦大学化学系
  • 投稿日期:1978-11-15 发布日期:2013-06-03

A STUDY OF ANODIC STRIPPING VOLTAMMETRY OF TRACE ARSENIC ON GOLD FILM ELECTRODE

DENC JIA-QI, CHEN XIAO-MING, HE PEI-XIN   

  1. Department of Chemistry, Fudan University, Shanghai
  • Received:1978-11-15 Published:2013-06-03

本文报道了痕量砷在玻璃态石墨电极为基体的金膜电极上的阳极溶出伏安法,在1M硫酸介质中,于+0.20V左右得到一个砷的溶出峰,峰高与砷的浓度在1.0×10-9M~6.0×10-6M范围内有良好的线性关系.定量下限达1.0×10-9M,相当于0.075ppb,比DDC银法灵敏度高出200多倍.本文并用三角波周期伏安法观察了电极反应过程,证明电极反应属不可逆反应.此外认为砷在电极上的浓集是由于形成了砷-金的金属间化合物.

This paper reports the anodio stripping voltammetry of traoe amount of arsenio on the gold film whioh is depositeal on a glassy graphite eleotrode.In 1 M sulfuric acid medium,it shows a peak of stripping ourrent of arsenic at +0.15V+0.25 V(vs.1N.Ag-AgCl).A linear relation between the peak height and the ooncentration of arsenic in the range of 1.0×10-9M to 6.0×10-6M was observed,the sensitivity of this method is about 200 times:Eligher than that of the oolorimetry of arsenic with silver diothyldithio-carbamate.On the other hand,we havo studied the eleotrode process with the triangle cyolic voltammetry.It shows that the electrode reaction is irreversible and tho deposition of arsanio on the gold film electrode is probably due to the formation of intarmetallic compound of arsenic with gold.