化学学报 ›› 2011, Vol. 69 ›› Issue (07): 848-852. 上一篇    下一篇

研究论文

SiO2/SiNx:H选择性刻蚀改善光诱导化学镀/电镀多晶硅太阳能电池过镀现象

李涛*,1,周春兰1,宋洋2,张磊3,惠俊3,杨海峰4,郜志华2,段野2,李友忠2,励旭东5,许颖5,赵雷1,刘振刚1,王文静1   

  1. (1太阳能热利用及光伏系统重点实验室 中国科学院电工研究所 北京 100190)
    (2中轻太阳能电池有限责任公司 北京 101111)
    (3广州确信乐思化学贸易有限公司 广州 518055)
    (4中国检验检疫科学研究院 北京 100123)
    (5北京市太阳能研究所 北京 100083)
  • 投稿日期:2010-08-03 修回日期:2010-12-09 发布日期:2010-12-28
  • 通讯作者: 李涛 E-mail:litao@mail.iee.ac.cn
  • 基金资助:

    中国科学院知识创新工程重要方向项目

SiO2/SiNx:H Selective Etching Improving Light-induced Electroless Plating/Electro-plating Multicrystalline Solar Cells Over-plating Phenomenon

Li Tao*,1 Zhou Chunlan1 Song Yang2 Zhang Lei3 Hui Jun3 Yang Haifeng4 Gao Zhihua2 Duan Ye2 Li Youzhong2 Li Xudong5 Xu Ying5 Zhao Lei1 Liu Zhengang1 Wang Wenjing1   

  1. (1 Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Science, Beijing 100190)
    (2 Chinalight Solar Company Limited, Beijing 101111)
    (3 Guangzhou Cookson Enthone Trading Company Limited, Guangzhou 518055)
    (4 Chinese Academy of Inspection and Quarantine, Beijing 100123)
    (5 Beijing Solar Energy Research Institute, Beijing 100083)
  • Received:2010-08-03 Revised:2010-12-09 Published:2010-12-28

自对准的光诱导化学镀/电镀技术以其栅线宽度小、工艺快捷高效等优点, 成为制备选择性发射极太阳能电池的理想选择. 然而, 该技术的前序需要HF溶液有效去除重掺杂区表面SiO2的同时, 避免在SiNx:H掩模上刻蚀出微孔而露出衬底的硅, 否则金属镍和银会在光诱导化学镀/电镀工艺中沉积在微孔中, 导致过镀现象. 这就要求预处理溶液对SiO2/SiNx:H有很高的选择性刻蚀. 本工作根据实验结果分析了产生过镀现象的原因, 研究了进行SiO2/SiNx:H选择性刻蚀的可行性. 依据HF刻蚀SiO2和SiNx:H的机理, 通过调节HF缓释溶液的pH值, 改善了多晶硅太阳能电池的过镀现象.

关键词: 过镀, 选择性刻蚀, 光诱导化学镀/电镀, 多晶硅太阳能电池

Self-aligned light-induced electroless plating/electro-plating technology, with its advantages of fine grid lines and fast and efficient process, became an ideal option for the preparation of selective emitter solar cells. However, before these technologies processing, the heavy doping area should be etched by HF solution to remove the surface SiO2 effectively and the pinholes should not emerge to expose the silicon substrate in the SiNx:H mask. Otherwise, the metal nickel and silver would deposit in the pinholes during the light-induced electroless plating/electro-plating resulting in the over-plating phenomenon. This demanded that the pretreatment solution should have highly selective etching for SiO2/SiNx:H. This paper analyzed the causes of the over-plating phenomenon in terms of the experiment results and studied the feasibility of selective etching for SiO2/SiNx:H. According to the mechanism of HF etching SiO2 and SiNx:H, the over-plating phenomenon of multicrystalline silicon solar cells was improved by adjusting the pH value of the buffer HF solution.

Key words: over-plating, selective etching, light-induced electroless plating/electro-plating, multicrystalline silicon solar cells

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