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化学学报
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化学学报 ›› 1982, Vol. 40 ›› Issue (2): 151-156. 上一篇    下一篇

论文

痕量锗在金膜电极上阳极溶出伏安法的研究

邓家祺1, 张庆元2, 王宅中3   

  1. 1. 复旦大学化学系 上海;
    2. 安徽大学化学系 合肥;
    3. 云南大学化学系 昆明
  • 投稿日期:1980-10-20 发布日期:2013-06-03
  • 通讯作者: 邓家祺

A STUDY OF ANODIC STRIPPING VOLTAMMETRY OF TRACE GERMANIUM ON GOLD FILM ELECTRODE

DENG JIA-QI1, ZHANG QING-YUAN2, WANG ZHAI-ZHONG3   

  1. 1. Chemistry Department, Fudan University, Shanghai;
    2. Chemistry Department, Anhui University, Hefei;
    3. Chemistry Department, Yunnan University, Kunming
  • Received:1980-10-20 Published:2013-06-03

PDF

643

被引次数

14

本文报道了痕量锗在玻璃石墨电极为基体的金膜电极上的阳极溶出伏安法.找出在pH10的硼砂缓冲溶液中于-1.90V和-1.17V(对1NAg-AgCl)左右出现两个溶出峰.取第一峰高为定量分析的基础.锗的浓度在1.0×10-8～1.0×10-6M范围内有良好的线性关系.检出下限为5.0×10-9M,相当于0.36ppb.本文用三角波周期伏安法观察了电极反应过程,证明电极反应为不可逆反应,并确定第一峰为金属锗氧化为二价锗,第二峰为二价锗氧化为四价锗.此外认为锗在电极上的富集是由于形成了金锗合金.

The anodic stripping voltammetry of trace amounts of germanium on the gold film deposited on a glassy graphite electrode was reported.In boric acid buffer solution, at pH 10, two peaks of stripping current of germanium appear at -0.90 V and -0.17V(vs.1N Ag-AgCl)respeotively, the first peak is used for quantitative analysis.A linear relationship exists between the peak height and the concentration of germanium in the range of 1.0×10-8～1.0×10-6M.The detection limit is about 5.0×10-9M (or 0.36 ppb).We have further studied the electrode process by means of triangle cyclic voltammetry and proved that the electrode reaction is irreversible and show that the first peak is due to the oxidation of metallic germanium to divalent germanium ion and the second peak due to the oxidation of divalent ions to tetravalent ions.The doposition of germanium on the gold film electrode is possibly due to the formation of an alloy of germanium and gold.