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化学学报
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化学学报 ›› 1960, Vol. 26 ›› Issue (2): 100-102. 上一篇    下一篇

研究简报

光谱法测定高纯度二氧化硅中微量杂质

黄昆华   

  1. 杭州, 浙江化工研究所
  • 投稿日期:1959-05-20 发布日期:2013-06-03

THE SPECTROGRAPHIC ANALYSIS OF TRACE ELEMENTS IN SILICA OF HIGH PURITY

HUANG KUN-HUA   

  1. Institute of Chemical Industries, Hangchow
  • Received:1959-05-20 Published:2013-06-03

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本文报告高纯度二氧化硅中五种痕量杂质元素的光谱测定.在交流电弧中完全蒸发试样而不采用内标法.采用二条分析线所得到的结果良好.本法可用以测定杂质的含量为10-4～10-2%.单独分析的最大偏差为8%.

This paper reports the spectrographic analysis of five trace elements in silica, using a.c. arc and cap electrode. By plotting two selected lines instead of one against log, concentration of the elements in question, calibration curves obtained are steeper in slope. The results thus found are precise. With this technique trace elements of the order 10-4,-10-2 per cent can be det0rmined. Average deviations do not exceed eight per cant.