化学学报 ›› 2024, Vol. 82 ›› Issue (8): 894-902.DOI: 10.6023/A24040135 上一篇    下一篇

研究论文

CsZn2B3O7:Eu2+宽带绿色荧光粉的发光性质及其在白光发光二极管上的应用

陈蕾a, 张瀚月a, 卿青a, 宋芳b, 李莉萍c,*(), 冷稚华a,*()   

  1. a 西安建筑科技大学化学与化工学院 西安 710055
    b 西安建筑科技大学分析测试中心 西安 710055
    c 吉林大学化学学院无机合成与制备化学国家重点实验室 长春 130012
  • 投稿日期:2024-04-19 发布日期:2024-06-04
  • 基金资助:
    陕西省自然科学基础研究计划项目(2024JC-YBMS-384); 陕西基础科学(化学、生物学)研究院基础科学研究计划项目(23JHQ077); 西安建筑科技大学大学生创新创业训练计划(202310703048)

Photoluminescence Properties of CsZn2B3O7:Eu2+ Broadband Green-emitting Phosphor for White Light-emitting Diodes

Lei Chena, Hanyue Zhanga, Qing Qinga, Fang Songb, Liping Lic,*(), Zhihua Lenga,*()   

  1. a School of Chemistry and Chemical Engineering, Xi’an University of Architecture and Technology, Xi’an 710055, China
    b Instrument Analysis Center of Xi’an University of Architecture and Technology, Xi’an 710055, China
    c State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China
  • Received:2024-04-19 Published:2024-06-04
  • Contact: * E-mail: 1079650289@qq.com; lengzh@xauat.edu.cn
  • Supported by:
    Natural Science Basic Research Program of Shaanxi Province(2024JC-YBMS-384); Basic Science Research Project of Shaanxi Academy of Fundamental Sciences (Chemistry, Biology)(23JHQ077); Innovation and Entrepreneurship Training Program for Students of Xi'an University of Architecture and Technology(202310703048)

近紫外芯片和红绿蓝三基色荧光粉组装的白光发光二极管(NUV-WLED)能有效缓解“蓝光危害”和提升显色指数, 然而开发合成温度低的宽带三基色荧光粉是其大规模应用的关键. 本研究选取合成温度低和具有丰富阳离子格位的CsZn2B3O7(下文简写成CZBO)作为基质材料, 采用高温固相法合成了一系列宽带Cs1-xZn2B3O7:xEu2+ (0.005≤x≤0.03, 下文简写成CZBO:xEu2+)绿色荧光粉. CZBO:xEu2+绿色荧光粉的发射峰值在508 nm、半峰宽约为109 nm, 且在373 nm附近的宽带激发峰能与365 nm的紫外LED芯片很好地匹配. CZBO:xEu2+荧光粉中存在三个Eu2+离子荧光中心, 分别对应占据在Cs(1)、Cs(2)和Cs(3)三个格位的Eu2+离子. Eu2+离子的最佳掺杂浓度为0.015, 且浓度猝灭机制为偶极-偶极相互作用. CZBO:0.015Eu2+荧光粉表现出较好的化学稳定性, 在空气中放置30 d后其荧光强度能维持在98.7%. 将CZBO:0.015Eu2+绿色荧光粉、商用BaMgAl10O17:Eu2+蓝色荧光粉和商用(Ca,Sr)AlSiN3:Eu2+红色荧光粉涂覆在365 nm的紫外LED芯片上组装的LED器件显色指数高达87. 在不同的电流(30~300 mA)驱动下组装的LED器件表现出稳定的暖白光发射, 且其色坐标、显色指数和相关色温几乎不变. 上述结果说明本研究报道的CZBO:0.015Eu2+绿色荧光粉在紫外LED芯片驱动的白光发光二极管照明领域具有潜在的应用前景.

关键词: Cs1-xZn2B3O7:xEu2+, 硼酸盐, 高温固相法, 绿色荧光粉, 白光发光二极管

Near-ultraviolet pumped white light-emitting diodes (NUV-WLED), which are based on the combination of NUV LED chip with red, green and blue trichromatic phosphors, can effectively alleviate the "blue light harm" and improve the color rendering index. However, developing broadband tricolor phosphor with lower synthesis temperature is the key for large-scale application of NUV-WLED. In this study, CsZn2B3O7 (hereinafter abbreviated as CZBO) with low synthesis temperature and multiple cationic sites was selected as the matrix material. A series of Cs1-xZn2B3O7:xEu2+ (0.005≤x≤0.03, hereinafter abbreviated as CZBO:xEu2+) broadband green phosphors were synthesized by high-temperature solid-state reaction method. The emission peak and full width at half maximum of CZBO:xEu2+ green phosphor are 508 nm and 109 nm, respectively. CZBO:xEu2+ phosphors exhibit a broadband absorption around 373 nm, which can be well matched with 365 nm ultraviolet LED chips. There are three Eu2+ luminescence centers in the CZBO:xEu2+ phosphors, i.e. the Eu2+ ions occupied in the Cs(1), Cs(2) and Cs(3) sites, respectively. The optimal doping concentration of Eu2+ ions is 0.015, and the concentration quenching mechanism is dipole-dipole interaction. CZBO:0.015Eu2+ phosphor shows good chemical stability, whose emission intensity can still remain 98.7% of that of the pristine sample after being exposed to ambient atmosphere for 30 d. The color rendering index of LED device fabricated by coating CZBO:0.015Eu2+ green phosphor, commercial BaMg- Al10O17:Eu2+ blue phosphor and commercial (Ca,Sr)AlSiN3:Eu2+ red phosphor on a 365 nm ultraviolet LED chip is as high as 87. This fabricated LED device shows a stable warm white light emission under different currents (30~300 mA), and its color coordinates, color rendering index and related color temperature are almost unchanged. These results indicate that the CZBO:0.015Eu2+ green phosphor reported in this study has a potential application prospect in the field of ultraviolet LED chip driven white light emitting diode lighting.

Key words: Cs1-xZn2B3O7:xEu2+, borate, high-temperature solid-state method, green phosphor, white light emitting diode