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化学学报 >

2012 , Vol. 70 >Issue 10: 1173 - 1178

DOI: https://doi.org/10.6023/A1110103

研究论文

电沉积Bi2Te3 基薄膜的电化学阻抗谱研究

  • 林青含 ,
  • 邱丽琴 ,
  • 程璇 ,
  • 周健
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  • a 厦门大学材料学院材料科学与工程系 厦门 361005;
    b 福建省特种先进材料重点实验室 厦门 361005

收稿日期: 2011-10-10

  修回日期: 2012-03-07

  网络出版日期: 2012-05-28

基金资助

福建省特种先进材料重点实验室基金(No. 2006L2003).

收起

Electrochemical Impedance Spectroscopic Study of Electrodeposited Bi2Te3-based Thin Films

  • Lin Qinghan ,
  • Qiu Liqin ,
  • Cheng Xuan ,
  • Zhou Jian
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  • a Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361005;
    b Fujian Key Laboratory of Advanced Materials, Xiamen University, Xiamen 361005

Received date: 2011-10-10

  Revised date: 2012-03-07

  Online published: 2012-05-28

Supported by

Project supported by the Fujian Key Laboratory of Advanced Materials, China (No. 2006L2003).

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摘要

以不锈钢为基底, 利用电化学沉积方法制备Bi2Te3 基薄膜材料, 并采用X 射线衍射技术、电子探针微观分析等方法对薄膜进行结构和成分表征, 通过电化学阻抗谱技术对不锈钢表面Bi2Te3 的电化学沉积机理进行了初步探讨. 结果表明Bi-Te 和Bi-Te-Se 体系具有相似的电化学沉积机理, 即Bi3+和HTeO2+ 或H2SeO3 首先被还原为Bi 单质和Te 或Se 单质, 然后Bi 单质与Te 或Se 单质反应生成Bi2Te3基化合物, 而Bi-Sb-Te 体系中, HTeO2+ 首先被还原为Te 单质, 生成的Te 再与Bi3+和Sb(III)反应生成Bi2Te3 基化合物, 三种体系的沉积都受电化学极化控制.

关键词： Bi2Te3; 电化学交流阻抗; 电沉积

本文引用格式

林青含 , 邱丽琴 , 程璇 , 周健 . 电沉积Bi2Te3 基薄膜的电化学阻抗谱研究[J]. 化学学报, 2012 , 70(10) : 1173 -1178 . DOI: 10.6023/A1110103

Abstract

The Bi2Te3-based thin films have been prepared by electrochemical deposition on stainless-steel substrates. The microstructure and composition of the films were studied by X-ray diffraction (XRD) and electron probe microanalysis (EPMA). The deposition mechanisms of Bi2Te3 thin films on stainless-steel substrates were preliminary investigated using electrochemical impedance spectroscopy (EIS). The results showed that the similar deposition mechanisms were obtained for Bi-Te binary and Bi-Te-Se ternary systems, i.e., the Bi3+, HTeO2+ and H2SeO3 were electrochemically reduced to form simple substances Bi(0), Te(0) and Se(0), respectively, then the Bi2Te3-based compounds were formed by reacting Te(0) or Se(0) with Bi(0). For Bi-Sb-Te ternary system, the HTeO2+ was first electrochemically reduced to form simple substance Te(0), and then the Bi2Te3-based compounds were formed by reacting Te(0) with Bi3+ and Sb(III). The deposition processes were controlled by electrochemical polarization.

Key words： Bi2Te3; electrochemical impedance spectroscopy; electrodeposition

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