基于缺陷曲率对含有V
1~V
4空位(5,5)单壁碳纳米管[1+1]和[2+1]加成反应的第一性原理研究
李磊, 贾桂霄, 王晓霞, 吴铜伟, 宋希文, 安胜利
[1+1] and [2+1] Additions on a (5,5) Single-Walled Carbon Nanotube with V
1~V
4 Vacancies Based on Defect Curvature: A First Principles Study
Li Lei, Jia Guixiao, Wang Xiaoxia, Wu Tongwei, Song Xiwen, An Shengli
化学学报
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2017, (3): 284
-292
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DOI: 10.6023/A16110645
