Photoelectrochem. cells of n/n+-Si or p/n+-Si with a metal (Pt, Au, Cu, Ni) Schottky barrier between the semiconductor and the Br redox couple electrolyte were studied. An optimized Pt/p/n+-Si cell had an open circuit voltage of 0.530 V, short circuit current of 47.6 mA/cm2, fill factor of 0.35 and energy conversion efficiency of 13.6%, under 65 mW/cm2 illumination. The photovoltaic parameters of some of the cells remained stable even after continuous irradiation for 75 h.

Key words: PLATINUM, SILICON, NICKEL, METAL THIN FILMS, CHEMICAL MODIFIED ELECTRODE, SOLAR CELLS, SCHOTTKY BARRIER, PHOTOELECTROCHEMICAL CELL