[Ga(en)~3]In~3Te~7(Ⅰ) has been synthesized by solvothermal technique using Rb~2Te, GaCl~3, InCl~3 and Te as starting materials and ethylenediamine as solvent at 180℃ for 7 days. The structure consists of a Zintl anion, ~∞^2[In~3Te~7]^3^- and a complex cation, [Ga(en)~3]^3^+. Ⅰ belongs to the monoclinic, space group P2~1/c, (no. 14), with unit cell dimensions: a=1.0460(2) nm, b=1.6981(3) nm, c=1. 4994(6) nm, α=90°, β=95.46(2)°, γ=90°, V=2.651(1) nm^3, Z=4. Optical studies were performed on the powder samples, which suggested that Ⅰ is a semiconductor with a band gap of 1.65eV. The result of TGA thermal analysis on Ⅰ indicated that the weight loss of enthylendiamine proceeded in three steps. The decomposition of Ⅰ produced Ga~2Te~3, In~2Te~3, Te and ethylenediamine as the final residues.

Key words: GALLIUM COMPOUND, CRYSTAL STRUCTURE, ETHANEDIAMINE, SEMICONDUCTOR