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Acta Chimica Sinica ›› 2008, Vol. 66 ›› Issue (12): 1411-1416. Previous Articles     Next Articles

La10(SiO4)6－x(GaO4)xO3－0.5x的合成及其导电性能

王贵领a 赵 辉*,b 霍丽华b 高 山b   

  1. (a哈尔滨工程大学材料科学与化学工程学院 哈尔滨 150001)
    (b黑龙江大学化学化工与材料学院功能材料省高校重点实验室 哈尔滨 150080)
  • 投稿日期:2007-10-09 修回日期:2007-12-20 发布日期:2008-06-28
  • 通讯作者: 赵 辉

Synthesis and Conducting Properties of La10(SiO4)6－x(GaO4)xO3－0.5x

WANG, Gui-Ling a ZHAO, Hui *,b HUO, Li-Hua b GAO, Shan b   

  1. (a College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001)
    (b Laboratory of Functional Materials, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080)
  • Received:2007-10-09 Revised:2007-12-20 Published:2008-06-28
  • Contact: ZHAO, Hui

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La10(SiO4)6－x(GaO4)xO3－0.5x (x＝0, 0.5, 1.0, 1.5 and 2) was successfully synthesized via a sol-gel method at 950 ℃, their apatite phases have been characterized by TG-DTA, XRD, IR and SEM, and their conducting properties were studied by electrochemical impedance spectroscopy. It was found that the conductivity was mostly influenced by both interstitial oxygen concentration and the volume of a unit cell, and the conductivity of La10(SiO4)5(GaO4)O2.5 was highest among all the synthesized oxyapatites, being 4.66×10－2 S•cm－1 at 700 ℃. Transport number of oxygen ions and the dependence of electrical conductivity on oxygen partial pressure indicate that the charge carriers of the silicate oxyapatite are oxygen ions.

Key words: Si-doped apatite, sol-gel method, free oxygen ion conduction, interstitial oxygen ion conduction, electrochemical impedance spectroscopy