Effect of antimony on the semiconducting properties of the anodic plumbous oxide film formed in sulfuric acid solution.Ⅲ.studies  on the anodic sb~2O~3 film film with a.c.impedance.

Acta Chimica Sinica ›› 1994, Vol. 52 ›› Issue (4): 331-336. Previous Articles Next Articles

Original Articles

锑对在硫酸溶液中形成的阳极Pb(Ⅱ)氧化物膜的半导体性质的影响Ⅲ. 交流阻抗法研究阳极Sb~2O~3膜

浦琮;周伟舫;张亿良

复旦大学化学系;上饶师范专科学校化学系

发布日期:1994-04-15

Effect of antimony on the semiconducting properties of the anodic plumbous oxide film formed in sulfuric acid solution.Ⅲ.studies on the anodic sb~2O~3 film film with a.c.impedance.

PU CONG;ZHOU WEIFANG;ZHANG YILIANG

Published:1994-04-15

Abstract

The semiconducting properties of the anodic film formed on antimony-lead alloys anodized in 0.05 moldm-3 H2SO4 + 0.5 moldm-3 Na2SO4 solution (30? at 0.9 V (vs. Hg/Hg2SO4/0.05 moldm-3 H2SO4) for 3 h were investigated using the a.c. impedance method. From the Mott-Schottky plot, the film is demonstrated to be a n-type semiconductor. The flat-band potential of the film is -0.34 V (vs. Hg/Hg2SO4/0.05 mol . dm-3 H2SO4), while the donor d. is 4.0 ?1019 cm-3. The effect of the antimony on the donor d. of the anodic lead oxide film is discussed.

Key words: STIBIUM, SULFURIC ACID, LEAD COMPOUNDS, FILMS, ANODES, OXYGEN COMPOUNDS, SEMICONDUCTOR, ACCUMULATORS

CLC Number:

O646

Cite this article

PU CONG;ZHOU WEIFANG;ZHANG YILIANG. Effect of antimony on the semiconducting properties of the anodic plumbous oxide film formed in sulfuric acid solution.Ⅲ.studies on the anodic sb~2O~3 film film with a.c.impedance.[J]. Acta Chimica Sinica, 1994, 52(4): 331-336.

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锑对在硫酸溶液中形成的阳极Pb(Ⅱ)氧化物膜的半导体性质的影响Ⅲ. 交流阻抗法研究阳极Sb~2O~3膜

Effect of antimony on the semiconducting properties of the anodic plumbous oxide film formed in sulfuric acid solution.Ⅲ.studies on the anodic sb~2O~3 film film with a.c.impedance.

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