Thin Films and Devices of Evaporable Spin Crossover Complexes

doi:10.6023/A22050212

Acta Chimica Sinica ›› 2022, Vol. 80 ›› Issue (9): 1351-1363.DOI: 10.6023/A22050212 Previous Articles Next Articles

Review

可蒸镀自旋交叉配合物的薄膜与器件

张琪^a, 江梦云^a, 刘天一^a, 曾意迅^a, 石胜伟^a^,^b^,^*()

a 武汉工程大学材料科学与工程学院武汉 430205
b 中国科学院长春应用化学研究所高分子物理与化学国家重点实验室长春 130022

投稿日期:2022-05-06 发布日期:2022-07-01
通讯作者: 石胜伟

作者简介:

张琪, 男, 武汉工程大学材料学院在读硕士研究生, 主要研究方向为基于自旋交叉配合物的开关存储器件.

江梦云, 女, 武汉工程大学材料学院在读硕士研究生, 主要研究方向为室温以上自旋交叉配合物的分子设计与制备.

石胜伟, 男, 博士毕业于中国科学院长春应用化学研究所, 现为武汉工程大学特聘教授, 主要研究方向为有机半导体材料与器件、柔性电子、自旋交叉现象及其器件应用等.

基金资助:
国家自然科学基金(52173183); 湖北省自然科学基金(2021CFB598); 中国科学院高分子物理与化学国家重点实验室开放课题(2020-13)

Thin Films and Devices of Evaporable Spin Crossover Complexes

Qi Zhang^a, Mengyun Jiang^a, Tianyi Liu^a, Yixun Zeng^a, Shengwei Shi^a^,^b()

a School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430205
b State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022

Received:2022-05-06 Published:2022-07-01
Contact: Shengwei Shi
Supported by:
National Natural Science Foundation of China(52173183); Natural Science Foundation of Hubei Province(2021CFB598); Open Research Fund of State Key Laboratory of Polymer Physics and Chemistry, Chinese Academy of Sciences(2020-13)

Spin states of the spin crossover complexes can be switched reversibly between high spin and low spin under different stimulations such as temperature, pressure, irradiation and magnetic field. Generally, it is also accompanied by the change of color, volume and conductivity, and the thermo-induced magnetic hysteresis. Therefore, they show potential applications in optical/thermal switches, sensors, display, and memory devices. Additionally, high-vacuum evaporation is generally applied to fabricate devices in molecular electronics/spintronics with high-quality and ultra-clean films. However, there are very few evaporable spin crossover complexes which greatly limit their applications. In this paper, we systematically summarize the recent progress of evaporable spin crossover complexes in films and devices. Several reported evaporable spin crossover complexes are discussed, and the effect of the substrate on spin transition has been investigated with different techniques, furthermore, the related conceptual devices are discussed. At the end, the existed difficulties and future trends of spin crossover complexes in device applications are prospected and reviewed to provide useful guidance for the future device developments.

Key words: spin crossover complexes, spin transition, evaporation, thin film, device applications

Cite this article

Qi Zhang, Mengyun Jiang, Tianyi Liu, Yixun Zeng, Shengwei Shi. Thin Films and Devices of Evaporable Spin Crossover Complexes[J]. Acta Chimica Sinica, 2022, 80(9): 1351-1363.

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Fig. & Tab. 10

Figure 1. Schematic diagram of spin transition in Fe(II) complexes

Figure 2. Structures of evaporable spin crossover complexes

Figure 3. XPS of [FeII(phen)2(NCS)2] films at (a) N 1s and (b) Fe 2p, (c) SQUID and (d) current-voltage characteristics for heterojunction device at room temperature[34]

Figure 4. XAS spectra of Fe L2,3 edges in [FeII(phen)2(NCS)2] for (a) powder, and (b) ultra-thin film on Cu(100) at 200 K[62]

Figure 5. (a) I-V curves of [FeII(phen)2(NCS)2]/CuN/Cu(100). (b) The reversible switching between HS and LS induced by voltage pulses with different polarity. (c) The effect of two consecutive voltage pulses with the same polarity on spin transition from HS to LS[63]

Figure 6. (a) Temperature-dependent Fe L2,3 XAS of 0.4 ML [FeII(H2B- (pz)2)2phen] on HOPG. Spectra before and after illuminating with green light at T=6 K are shown in blue and green, respectively. (b) Fraction of HS molecules as a function of exposure time to green light at T=6 K[68]

Figure 7. Scheme of the MEMS device and the associated magnetic actuation-piezoresistive detection method[70]

Figure 8. (a) The dependence of HS fraction on temperature for FeII[HB(3,5-(Me)2pz)3]2 films before and after annealing. (b) Absorption spectra for 130-nm film, inserted is the comparison of spectra before and after annealing[75]

Figure 9. (a) Scheme of the crossbar junctions; (b) temperature dependence of the UV absorbance of the films at 317 nm; (c) I-V curves of 100 nm thick junctions at different temperatures with a scan rate of 100 mV/s; (d) logI vs. 1/T curves of 100 nm thick junctions recorded with an applied bias of 12 V at a scan rate of 5 K/min. The dashed line shows the spin transition temperature (TSCO)[79]

Figure 10. AFM topography image of [Fe(HB(tz)3)2] thin film (a) and the cross-section of ITO/[Fe(HB(tz)3)2] (b), device structure with the encapsulation (c), and logI-V curves of ITO/[Fe(HB(tz)3)2] (100 nm)/Al at different temperatures evidencing a shift of the turn-on voltage (Von) between the LS (20 ℃) and HS (100 ℃) (d)[80]

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可蒸镀自旋交叉配合物的薄膜与器件

Thin Films and Devices of Evaporable Spin Crossover Complexes

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Fig. & Tab. 10

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