Ambipolar Organic Field Effect Transistor Memory Based on H-Type Fluorene-Based Small Molecule

doi:10.6023/A23060267

Acta Chimica Sinica ›› 2023, Vol. 81 ›› Issue (11): 1508-1514.DOI: 10.6023/A23060267 Previous Articles Next Articles

Article

基于H型芴基小分子的双极性有机场效应晶体管存储器

刘玉玉^a^,^b, 陈捷锋^a, 邵振^a, 魏颖^a^,^*(), 凌海峰^a^,^*(), 解令海^a^,^*()

a 南京邮电大学材料科学与工程学院有机电子与信息显示国家重点实验室南京 210023
b 南京工业职业技术大学电气工程学院南京 210023

投稿日期:2023-06-02 发布日期:2023-07-26
基金资助:
国家重点研发计划青年项目(2021YFA0717900); 国家自然科学基金(22275098); 国家自然科学基金(22071112); 国家留学基金(201908320064); 南京工业职业技术大学(YK21-02-07)

Ambipolar Organic Field Effect Transistor Memory Based on H-Type Fluorene-Based Small Molecule

Yuyu Liu^a^,^b, Jiefeng Chen^a, Zhen Shao^a, Ying Wei^a(), Haifeng Ling^a(), Linghai Xie^a()

a State Key Laboratory of Organic Electronics and Information Displays, College of Materials Science and Engineering, Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023
b College of Electrical Engineering, Nanjing Vocational University of Industry Technology, Nanjing 210023

Received:2023-06-02 Published:2023-07-26
Contact: *E-mail: iamywei@njupt.edu.cn; iamhfling@njupt.edu.cn; iamlhxie@njupt.edu.cn
Supported by:
National Key R&D Program Youth Project(2021YFA0717900); National Natural Science Foundation of China(22275098); National Natural Science Foundation of China(22071112); State Scholarship Fund(201908320064); Nanjing Vocational University of Industry Technology(YK21-02-07)

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Abstract

A small organic molecule 3Ph-TrH with a rigid structure was designed with π-bridge thienyl and fluorenyl groups as hole trapping sites and the fluorenyl and phenyl units as electron trapping sites according to steric hindrance. Then, the floating gate type organic field-effect transistor (OFET) memories based on this small organic molecule through solution processing were fabricated. The experimental results show that there is a hole storage window of 31.2 V and an electron storage window of 11.6 V in this device, exhibiting ambipolar charge storage based on a single small molecule material. To improve the stability of the device, a floating-gate OFET memory based on 3Ph-TrH with polystyrene (PS)-doped film was further prepared. The test results show that the device is equipped with better device stability and tolerance than those based on 3Ph-TrH as a single-component charge trapping layer. After 10000 s of retention times test, ON/OFF current ratio of the device can still be maintained at 1.1×10³, only reduced by an order of magnitude. This work can provide an idea for the preparation of a new type of OFET memory with ambipolar storage.

Key words: steric hindrance, fluorene-based small molecule material, charge trapping layer, ambipolar charge storage, floating gate type organic field-effect transistor (OFET) memory

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Yuyu Liu, Jiefeng Chen, Zhen Shao, Ying Wei, Haifeng Ling, Linghai Xie. Ambipolar Organic Field Effect Transistor Memory Based on H-Type Fluorene-Based Small Molecule[J]. Acta Chimica Sinica, 2023, 81(11): 1508-1514.

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Fig. & Tab. 6

Scheme 1. Synthetic routes of compound 3Ph-TrH

Figure 1. (a) Top view and side view of compound 3Ph-TrH; the calculated (b) HOMO and (c) LUMO distribution for 3Ph-TrH

Figure 2. (a) TGA diagram; (b) DSC diagram of 3Ph-TrH

Figure 3. (a~c) AFM morphology of 3Ph-TrH, 3Ph-TrH/PS, and PS films on SiO2/Si substrates; (d~f) AFM morphology of pentacene crystallized on 3Ph-TrH, 3Ph-TrH/PS, and PS films

Figure 4. (a) Device structure diagram; (b) energy level diagram of pentacene and 3Ph-TrH; for the device based on 3Ph-TrH: (c) electron and hole storage windows; (d) retention time and (e) WRER cycles test in the hole trapping mode; for the device based on 3Ph-TrH/PS: (f) electron and hole storage windows; (g) retention time and (h) WRER cycles test in the hole trapping mode

Figure 5. Schematic illustrations of operational mechanisms in (a) holes trapping in dark; (b) electrons trapping under lighting conditions

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基于H型芴基小分子的双极性有机场效应晶体管存储器

Ambipolar Organic Field Effect Transistor Memory Based on H-Type Fluorene-Based Small Molecule

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