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研究展望

路易斯碱负离子掺杂有机半导体:原理、应用和展望

蒋丹妮, 严康荣, 李昌治   

  1. 浙江大学 高分子科学与工程学系 杭州 310027
  • 发布日期:2020-09-04
  • 通讯作者: 李昌治 E-mail:czli@zju.edu.cn
  • 基金资助:
    国家自然科学基金优秀青年项目(21722404),浙江省自然科学基金杰出青年项目基金(LR17E030001)

Doping of Organic Semiconductors with Lewis Base Anions: Mechanism, Application and Perspectives

Jiang Dan-Ni, Yan Kang-Rong, Li Chang-Zhi   

  1. Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027
  • Published:2020-09-04
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Nos. 21722404, 21674093), and Zhejiang Natural Science Fund for Distinguished Young Scholars (LR17E030001).

掺杂是改善有机半导体载流子浓度和电荷输运能力的有效方法。路易斯碱负离子电子转移掺杂有机半导体,逐渐发展成为了一种温和、可控和可溶液加工的n型掺杂方法,并在有机光电器件中展现出较好的应用。本文旨在探讨路易斯碱负离子和n型半导体之间的电子转移机制及其影响因素,总结基于该策略开发的界面材料和活性层掺杂等方面的应用,并展望其未来的发展方向。

关键词: 路易斯碱负离子, n型掺杂, 离子-π作用, 界面, 掺杂剂

Doping is an effective method to improve the carrier densities and charge transport capabilities of organic semiconductors. In recent years, n-doping of organic semiconductors via Lewis base anions has attracted much attentions of researchers, which takes place under mild condition and controllable fashion, hence exhibiting broad applications in optoelectronics. This perspective focuses on discussing the mechanism of anion-induced electron transfer to semiconductors, summarizing its recent progresses in interfacial materials and doped active layers for optoelectronic devices, as well as analyzing the future development of this field.

Key words: Lewis base anions, n-doping, anion-π interaction, interfacial materials, dopant