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化学学报
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化学学报 ›› 2002, Vol. 60 ›› Issue (1): 30-36. 上一篇    下一篇

研究论文

不锈钢载波钝化膜的半导体性质

张俊青;乔亦男;曹楚南;张鉴清;周国定   

  1. 上海电力学院电化学研究室国家电力公司热力设备腐蚀与防护重点实验室;浙江大学化学系;中国科学院金属研究所金属腐蚀与防护国家重点实验室
  • 发布日期:2002-01-15

Semiconducting properties of passive film formed on stainless steel by using A. V. passivation

ZHANG JUNQING;QIAO YINAN;CAO CHUNAN;ZHANG JIANQING;ZHOU GUODING   

  • Published:2002-01-15

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778

被引次数

56 | 6

运用交流阻抗法和光电化学法研究了不锈钢载波钝化膜层的半导体性质。讨论了交流阻抗测试中扰动频率的变化对Mott-Schottky曲线的影响，讨论了不锈钢载波钝化膜的n/p型、杂质施主密度和平带电位等半导体性质，同时结合光电化学法对交流阻抗测试结果进行了验证分析，实验结果认为不锈钢载波钝化膜层具有与直流钝化膜层相似的半导体性质，并通过膜层的组成结构对其半导体性质作了分析。

关键词: 不锈钢, 钝化膜, 半导体性质, 交联阻抗, 光电化学

Passive film formed on 304 stainless steel in 2.5 mol/L H~2SO~4 solution by using alternating voltage (A. V. ) passivation have been investigated by measuring capacitance and photoelectrochemical parameters. The investigation of the effect of measure frequency on the slope of Mott-Schottky curve has been carried out. The photoelectrochemical measurements were consistent with the capacitance measurement. Analysis of the experimental results showed that the passive film formed 304 stainless steel by using A. V. passivation exhibits semiconducting properties. Using the simple model of semiconductor rather than the multi-donor level model can explain satisfactorily the semiconducting behavior of the film formed on 304 stainless steel by using A. V. passivation.

Key words: STAINLESS STEEL, PASSIVATION FILMS, PHOTO-ELECTROCHEMISTRY

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