Acta Chimica Sinica ›› 2011, Vol. 69 ›› Issue (21): 2539-2542.DOI: 10.6023/A1104022Q Previous Articles     Next Articles

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  1. (北京师范大学化学学院 北京 100875)
  • 投稿日期:2011-04-02 修回日期:2011-05-25 发布日期:2011-06-03
  • 通讯作者: 王科志
  • 基金资助:


Photoelectrochemical Properties of Graphene Oxide Film

WANG Ji-Xue, WANG Ke-Zhi, YANG Hong-Qiang, HUANG Zhe   

  1. (College of Chemistry, Beijing Normal University, Beijing 100875)
  • Received:2011-04-02 Revised:2011-05-25 Published:2011-06-03
  • Contact: Ke-ZHi Wang

Graphene oxide (GO) was prepared using a modified Hummers approach, and deposited by electrostatically assembly technique onto protonated indium-tin oxide (ITO) coated glass substrate. The thus-formed GO thin film was characterized by using UV-visible absorption spectroscopy and scanning electron microscopy. The GO coated ITO electrode in 0.1 mol•L-1 Na2SO4 was also subjected to photoelectrochemical studies, and was found to exhibit stable cathodic photocurrent density of 3.72 μA/cm2 under white light irradiance of 100 mW/cm2 and -0.4 V bias voltage.

Key words: graphene oxide, self-assembled film, photoelectrochemical property