Acta Chim. Sinica ›› 2015, Vol. 73 ›› Issue (9): 924-935.

Special Issue: 非碳基二维材料

Review

### 二维材料双电层场晶体管的研究

1. a 南洋理工大学材料科学与工程学院 新加坡 639798;
b 南洋理工大学电气电子工程学院 新加坡 639798
• 投稿日期:2015-08-18 发布日期:2015-09-15
• 通讯作者: 刘政 E-mail:Z.Liu@ntu.edu.sg

### Electric-double-layer Transistors Based on Two Dimensional Materials

He Xuexiaa, Liu Fucaia, Zeng Qingshenga, Liu Zhenga,b

1. a School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore;
b School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
• Received:2015-08-18 Published:2015-09-15

Over the past years, two-dimensional (2D) nanomaterials especially transition metal dichalcogenides (TMDs) have emerged as promising semiconductor materials to complement graphene-based electronics. They grain lots of attention due to their large number of candidates and varieties of physical properties. In this family, there are a wide range of materials exists ranging from Mott insulator semiconductor, metal, even to superconductor. Some of them, e.g. MoS2, MoSe2, WS2 and WSe2 have been widely investigated in these years, and they show unique properties for artificial van der Waals solids, electronics with ultra-low energy consumption, valleytronics, non-linear optics and high performance catalyst for hydrogen evolution reaction, while many of them still await a thorough theoretical and experimental exploration. Scientists in this field have try their best to modify the properties of this unique family. Charge carrier control is a key issue in the development of electronic functions of semiconductive materials. Beyond the simple enhancement of conductivity, high charge carrier accumulation can realize various phenomena, such as chemical reaction, phase transition, magnetic ordering, and superconductivity. In 2007, Hebard et al. reported the first electric-double-layer transistors (EDLT) using ionic liquid as the gate dielectric, the mobility was increased by 3 cm2·V－1·s－1 than the traditional transistor, this was the first demonstration that EDLT can be used to enhance the performance such as the mobility and the operation voltage of the devices. After that work, many works have been done using EDLT method. Very recently, scientists found that EDLT is also applicable for modifying the electronic properties of both organic and inorganic materials by control the charge carriers in the interface of the EDLT. Based on this method, high transistor performance, insulator-metal transitions, superconductivity, and even ferromagnetism have been released. In this review, we introduce and review the recent work for modifying the electronic properties based on 2D TMD materials.