Fabrication of erbium (Er) and yttrium (Y) co-doped porous silicon (PS:Er,Y) is firstly reported. Enhancement of Er-related photoluminescence at 1.54 μm has been achieved by the co-doping of Y~ (3+) . The dependence of photoluminescence intensity on temperature was investigated. Luminescence quenching was observed for PS：Er, similar to that for Si:Er, while 1.54 μm luminescence intensity from PS:Er,Y was found to increase a little when the photoluminescence spectra were measured at a higher temperature. A possible enhanced photoluminescence mechanism was proposed.

Key words: SILICON, SILICON, YTTRIUM, DOPE, PHOTOLUMINESCENCE, ELECTROLYSIS, FLUORESCENCE QUENCHER