Acta Chimica Sinica ›› 2005, Vol. 63 ›› Issue (19): 1829-1833. Previous Articles     Next Articles

Original Articles

层状MAgTeS3 (M=K, Rb)的溶剂热合成与表征

白音孟和1,叶玲2,季首华3,安永林*,1,宁桂玲1   

  1. (1大连理工大学化学系 大连 116024)
    (2吉林大学超分子结构与材料教育部重点实验室 长春 130012)
    (3大连理工大学材料系 大连 116024)
  • 投稿日期:2005-01-19 修回日期:2005-06-03 发布日期:2010-12-10
  • 通讯作者: 安永林

Solvothermal Synthesis and Characterization of MAgTeS3 (M=K, Rb) with Layered Structure

BAIYIN Meng-He1, YE Ling2, JI Shou-Hua3, AN Yong-Lin*,1, NING Gui-Ling1   

  1. (1 Department of Chemistry, Dalian University of Technology, Dalian 116024)
    (2 Key Lab of Supramolecular Structure and Materials of Ministry of Education, Jilin University, Changchun 130012)
    (3 Department of Materials, Dalian Uni-versity of Technology, Dalian 116024)
  • Received:2005-01-19 Revised:2005-06-03 Published:2010-12-10
  • Contact: AN Yong-Lin

Two thio-tellurite KAgTeS3 (1) and RbAgTeS3 (2) were synthesized solvother-mally and characterized by X-ray single crystal diffraction. These isostructural compounds compose of infinite parallel chains formed by AgS4 tetrahedra sharing their vertices, and these chains are further connected by trigonal-pyramidally coordinated Te4+ to form anionic layered structure with cations located between the layers. Crystal data for 1: Mr=370.75, P21/c, a=0.73639(6) nm, b=1.06468(8) nm, c=0.85203(6) nm, β=106.4640(10)°, V=0.64062(8) nm3, Z=4, Mo Kα, λ=0.071073 nm, R(F)=4.44%, wR(F2)=11.66%. Crystal data for 2: Mr=417.12, P21/c, a=0.75531(12) nm, b=1.07076(7) nm, c=0.8583(2) nm, β=106.497(6)°, V=0.66558(19) nm3, Z=4, Mo Kα, λ=0.071073 nm, R(F)=6.00%, wR(F2)=15.43%. UV-Vis diffu-sion reflectance spectra suggest that the crystals 1 and 2 are semiconductor with estimated band gaps 2.03 and 2.10 eV, respectively. The DSC data show that crystal 1 and crystal 2 collapse at 333 and 352 ℃ respectively, in nitrogen.

Key words: solvothermal synthesis, quaternary thio-tellurite, crystal structure