Ge2Sb2Te5的化学机械抛光研究进展

doi:10.6023/A13030326

化学学报 ›› 2013, Vol. 71 ›› Issue (08): 1111-1117.DOI: 10.6023/A13030326 上一篇下一篇

综述

Ge₂Sb₂Te₅的化学机械抛光研究进展

何敖东^a,b, 刘波^a, 宋志棠^a, 冯高明^c, 朱南飞^c, 任佳栋^c, 吴关平^c, 封松林^a

a 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室上海 200050;
b 中国科学院大学北京 100083;
c 中芯国际集成电路制造公司上海 201203

投稿日期:2013-03-24 发布日期:2013-05-06
通讯作者: 刘波, E-mail: liubo@mail.sim.ac.cn E-mail:liubo@mail.sim.ac.cn
基金资助:
项目受国家重点基础研究发展计划(Nos. 2010CB934300, 2011CBA00607, 2011CB9328004)、国家集成电路重大专项(No. 2009ZX02023-003)、国家自然科学基金(Nos. 60906004, 60906003, 61006087, 61076121, 61176122, 61106001)、上海市科委(12nm0503701)资助.

Research and Development of Chemical Mechanical Planarization for Ge₂Sb₂Te₅

He Aodong^a,b, Liu Bo^a, Song Zhitang^a, Feng Gaoming^c, Zhu Nanfei^c, Ren Jiadong^c, Wu Guanping^c, Feng Songling^a

a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050;
b University of the Chinese Academy of Sciences, Beijing 100049, China;
c Semiconductor Manufacturing International Corporation, Shanghai 201203, China

Received:2013-03-24 Published:2013-05-06
Supported by:
Project Supported by the National Key Basic Research Program of China (Nos. 2010CB934300, 2011CBA00607, 2011CB9328004), National Integrate Circuit Research Program of China (2009ZX02023-003), National Natural Science Foundation of China (60906004, 60906003, 61006087, 61076121, 61176122, 61106001), Science and Technology Council of Shanghai (12nm0503701).

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摘要/Abstract

相变存储器由于具有非易失性、高速度、低功耗等优点被认为最有可能成为下一代存储器的主流产品, Ge₂Sb₂Te₅(GST)作为一种传统相变材料已经被广泛应用在相变存储器中, 而GST的化学机械抛光作为相变存储器生产的关键工艺目前已被采用. 本工作综述了有关GST的化学机械抛光技术研究进展, 讨论了GST化学机械抛光过程的影响因素, 如下压力、转速、抛光垫、磨料、氧化剂、表面活性剂等, 并对目前GST的化学机械抛光机理进行了归纳, 进一步展望了GST的化学机械抛光技术的发展前景.

关键词: Ge₂Sb₂Te₅, 化学机械抛光, 相变存储器

Phase change memory (PCM) is considered a major candidate for next-generation memory due to its nonvolatile, fast program access times, low consumable power. So far chalcogenide Ge₂Sb₂Te₅ (GST), as a traditional phase material, has been widely adopted and investigated for PCM application. Recently, chemical mechanical planarization (CMP) of GST as a key technique for confined structure has been applied in the fabrication of PCM. In this paper, research and development of CMP for GST is reviewed firstly and the impact factors of down force, rotation velocity, polishing pads, and the slurry on the GST CMP are discussed. For the mechanical parameter, the removal rate (RR) of GST increases with the increasing of pressure and rotation velocity firstly, and then reaches saturation or slightly decreases. The gentle mechanical parameter is a better choice for GST CMP due to its lower hardness. With regard to polishing pads, GST polished using Politex reg can attain a better surface quality, and almost no residue and scratches can be found, compared with IC1010. The oxidizer of slurry, such as H₂O₂, (NH₄)₂S₂O₈, KMnO₄ and FeCl₃ have a great influence on the GST performance, the oxidization capacity of each element in GST alloy is different. Among these elements, Ge is preferentially oxidized, but Te is hard oxidized due to their different electronegativity. RR strongly depends on the pH of slurry, it reaches high RR in the strong acidic and alkaline condition. The stable species for GST in the slurries at pH 2 are GeO₂, Sb₂O₃ and Te both for the situations with and without H₂O₂, while they are, and for those at pH 11. Usually, the GST polished follows a corrosion polishing mechanism and cyclic reaction polishing mechanism in the different conditions. For corrosion polishing mechanism, it involves the direct touching between the GST film and the abrasives of slurry. For the cyclic reaction polishing mechanism, it involves passivation by an oxidized GST layer firstly, then mechanical polishing between the oxidized GST surface and abrasives, and repassivation. Although the GST CMP process exhibits better electrical performance for the PCM, it was very difficult to get the desirable GST CMP solutions due to the complicated GST material characteristics such as density, composition, doped component, and so on. The suitable slurry composition, optimal polishing process and suitable polishing pad need to be investigated further, especially below 30 nm complementary metal oxide semiconductor process node.

Key words: Ge₂Sb₂Te₅, chemical mechanical planarization, phase change memory

引用此文

何敖东, 刘波, 宋志棠, 冯高明, 朱南飞, 任佳栋, 吴关平, 封松林. Ge₂Sb₂Te₅的化学机械抛光研究进展[J]. 化学学报, 2013, 71(08): 1111-1117.

He Aodong, Liu Bo, Song Zhitang, Feng Gaoming, Zhu Nanfei, Ren Jiadong, Wu Guanping, Feng Songling. Research and Development of Chemical Mechanical Planarization for Ge₂Sb₂Te₅[J]. Acta Chimica Sinica, 2013, 71(08): 1111-1117.

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参考文献

[1] Carria, E.; Mio, A. M.; Gibilisco, S.; Miritello, M.; Grimaldi,M. G.; Rimini,E. Electrochem. Solid-State Lett. 2011, 14, 124.

[2] Peng, H. K.; Cil, K.; Gokirmak, A.; Bakan, G.; Zhu, Y.; Lai, C. S.; Lam, C. H.; Silva, H. Thin Solid Films. 2012, 520, 2976.

[3] Baker, D. A.; Paesler, M. A.; Lucovsky, G.; Agarwal,S. C.;Taylor, P. C. Phys. Rev. Lett. 2006, 96, 255501.

[4] Jeong, T. H.; Kim, R. M.; Seo, H.; Park, J. W.; Yeon, C. Jpn. J. Appl. Phys, Part1. 2000, 39, 2775.

[5] Matsunaga, T.; Yamada, N. Jpn. J. Appl. Phys. 2002, 41, 1674.

[6] Yeung, F.; Ahn, S. J.; Hwang, Y. N.; Jeong,C. W.; Song,Y. J.; Lee,S. Y.; Lee,S. H.; Ryoo,K. C.; Park, J. H.; Shin, J. M.; Jeong, W. C.; Kim, Y. T.; Koh, G. H.; Jeong, G. T.; Jeong, H.S.; Kim. K. Jpn. J. Appl. Phys. 2005, 44, 2691.

[7] Bae, J.; Lee, W., Park, S.; Lee, J. D.; Hwang, I.; Nam, S. ICPT Grenoble, France. 2012,10.

[8] Zhang, K, L.; Liu, Q. B.; Song, Z.T.; Feng, S.L.; Chen, B. IEEE. 2006.

[9] Zhong, M. Ph. D. Investigation of Phase-change Materials Chemical Mechanical Polishing, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences,2010 (in Chinese) (钟旻, 博士论文, 中国科学院上海微系统与信息技术研究所, 上海, 2010)

[10] Kim, J. Y.; Suwon, S. US7, 682, 976, B2. 2010.3.23.

[11] Liu, Q. B.; Song, Z. T.; Zhang, K. L.; Wang, L.Y.; Feng, S. L. Chin. Phys. Lett. 2006, 23, 2296.

[12] Schulueter, J. A.; Palmer, B. J. US7, 678, 605B2. 2010, 3.16.

[13] Liu, Z. US 2010/0112906 A1. 2010,5.6

[14] Cui, H.; Cho, J. Y.; Park, J. H.; Park, H. S.; Park, J. G. J. Electrochem. Soc. 2011, 158, H666.

[15] Park, J. H.; Cui, H.; Yi, S. H.; Park, J. G.; Paik, U. J. Mater. Res. 2008, 23, 3323.

[16] Zhang, Z. F.; Liu, W. L.; Song, Z. T.; J. Vac. Sci. Technol. B. 2011, 29, 011020.

[17] He, A. D.; Wang, L. Y,; Song, Z. T.; Liu,B.; Zhong, M.; Yan, W. X.; Li, T. J.; Feng, S. L. ECS J. Solid State Sci. Technol. 2012,1,179.

[18] He, A. D.; Song, Z. T.; Liu, B.; Zhong, M.; Wang, L. Y.; Lu, Y. G.; Feng, S. L. Chin. Phys. B. 2013, 22, 018503.

[19] Yan, W. X.; Wang, L. Y.; Zhang, Z, F.; He, A.D.; Zhong, M.; Liu, W. L.; Wu, L. C.; Song, Z. T. Chin. Phys. Lett. 2012, 29(3):038301.

[20] Cui, H.; Cho, J. Y.; Hwang, H. S.; Lim, J. H.; Park, J.H.; Park, H. S.; Hong, K.; Park, J. G. J. Electrochem. Soc. 2010,157, H1036.

[21] Zhong, M.; Song, Z., T.; Liu, B.; Feng, S. L.; Chen, B. J. Electrochem. Soc. 2008, 155, H929.

[22] Cho, J. Y.; Hao, C.; Park, J. H; Yi, S. H.; Park, J. G. Electrochem. Solid-State Lett. 2010, 13, H155.

[23] Yi, S. H.; Cho, J. Y.; Park, J. G. J. Electrochem. Soc. 2012,159, C546.

[24] Wang, L. Y.; Song, Z. T.; Zhong, M.; Liu, W. L.; Yan,W. X.; Qin, F.; He, A. D.; Liu, B. Appl. Surf. Sci. 2012, 258, 5185.

[25] Wang, Y. L.; Liu, B.; Song, Z. T.; Feng, S.L.; Xiang, Y. H.; Zhang, F.X.; J. Electrochem. Soc. 2009, 156, H699

[26] Cho, J. Y.; Cui, H.; Park, J. H.; Park, H. S.; Park, J. G. Electrochem. Solid-State Lett. 2011, 14, H450.

Ge₂Sb₂Te₅的化学机械抛光研究进展

Research and Development of Chemical Mechanical Planarization for Ge₂Sb₂Te₅

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