基于H型芴基小分子的双极性有机场效应晶体管存储器

doi:10.6023/A23060267

化学学报 ›› 2023, Vol. 81 ›› Issue (11): 1508-1514.DOI: 10.6023/A23060267 上一篇下一篇

研究论文

基于H型芴基小分子的双极性有机场效应晶体管存储器

刘玉玉^a^,^b, 陈捷锋^a, 邵振^a, 魏颖^a^,^*(), 凌海峰^a^,^*(), 解令海^a^,^*()

a 南京邮电大学材料科学与工程学院有机电子与信息显示国家重点实验室南京 210023
b 南京工业职业技术大学电气工程学院南京 210023

投稿日期:2023-06-02 发布日期:2023-07-26
基金资助:
国家重点研发计划青年项目(2021YFA0717900); 国家自然科学基金(22275098); 国家自然科学基金(22071112); 国家留学基金(201908320064); 南京工业职业技术大学(YK21-02-07)

Ambipolar Organic Field Effect Transistor Memory Based on H-Type Fluorene-Based Small Molecule

Yuyu Liu^a^,^b, Jiefeng Chen^a, Zhen Shao^a, Ying Wei^a(), Haifeng Ling^a(), Linghai Xie^a()

a State Key Laboratory of Organic Electronics and Information Displays, College of Materials Science and Engineering, Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023
b College of Electrical Engineering, Nanjing Vocational University of Industry Technology, Nanjing 210023

Received:2023-06-02 Published:2023-07-26
Contact: *E-mail: iamywei@njupt.edu.cn; iamhfling@njupt.edu.cn; iamlhxie@njupt.edu.cn
Supported by:
National Key R&D Program Youth Project(2021YFA0717900); National Natural Science Foundation of China(22275098); National Natural Science Foundation of China(22071112); State Scholarship Fund(201908320064); Nanjing Vocational University of Industry Technology(YK21-02-07)

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摘要/Abstract

从空间位阻角度出发, 设计并合成了H型芴基小分子材料3Ph-TrH, 并通过溶液加工方法制备了将其作为电荷捕获层的浮栅型有机场效应晶体管(OFET)存储器. 结果表明, 该器件的空穴和电子存储窗口分别为31.2和11.6 V, 实现了基于单个小分子材料的双极性电荷存储. 为了提高器件的稳定性, 进一步制备了基于3Ph-TrH与聚苯乙烯(PS)掺杂薄膜的浮栅型OFET存储器. 测试结果显示, 该器件比基于3Ph-TrH作为单组分电荷捕获层的器件具有更高的稳定性和耐受性, 在10000 s的维持时间测试后, 该器件的电流开关比还能维持在1.1×10³. 该工作为制备新型双极性电荷存储的OFET存储器提供了一条思路.

关键词: 空间位阻, 芴基小分子材料, 电荷捕获层, 双极性电荷存储, 浮栅型OFET存储器

A small organic molecule 3Ph-TrH with a rigid structure was designed with π-bridge thienyl and fluorenyl groups as hole trapping sites and the fluorenyl and phenyl units as electron trapping sites according to steric hindrance. Then, the floating gate type organic field-effect transistor (OFET) memories based on this small organic molecule through solution processing were fabricated. The experimental results show that there is a hole storage window of 31.2 V and an electron storage window of 11.6 V in this device, exhibiting ambipolar charge storage based on a single small molecule material. To improve the stability of the device, a floating-gate OFET memory based on 3Ph-TrH with polystyrene (PS)-doped film was further prepared. The test results show that the device is equipped with better device stability and tolerance than those based on 3Ph-TrH as a single-component charge trapping layer. After 10000 s of retention times test, ON/OFF current ratio of the device can still be maintained at 1.1×10³, only reduced by an order of magnitude. This work can provide an idea for the preparation of a new type of OFET memory with ambipolar storage.

Key words: steric hindrance, fluorene-based small molecule material, charge trapping layer, ambipolar charge storage, floating gate type organic field-effect transistor (OFET) memory

引用此文

刘玉玉, 陈捷锋, 邵振, 魏颖, 凌海峰, 解令海. 基于H型芴基小分子的双极性有机场效应晶体管存储器[J]. 化学学报, 2023, 81(11): 1508-1514.

Yuyu Liu, Jiefeng Chen, Zhen Shao, Ying Wei, Haifeng Ling, Linghai Xie. Ambipolar Organic Field Effect Transistor Memory Based on H-Type Fluorene-Based Small Molecule[J]. Acta Chimica Sinica, 2023, 81(11): 1508-1514.

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图/表 6

图式1. 化合物3Ph-TrH的合成路线

Scheme 1. Synthetic routes of compound 3Ph-TrH

图1. (a)化合物3Ph-TrH的主视图和俯视图; 理论计算3Ph-TrH的(b) HOMO、(c) LUMO电子云图

Figure 1. (a) Top view and side view of compound 3Ph-TrH; the calculated (b) HOMO and (c) LUMO distribution for 3Ph-TrH

图2. 3Ph-TrH的(a) TGA图; (b) DSC图

Figure 2. (a) TGA diagram; (b) DSC diagram of 3Ph-TrH

图3. (a~c) 3Ph-TrH、3Ph-TrH/PS、PS薄膜在SiO2/Si衬底上的AFM形貌图; (d~f)并五苯在3Ph-TrH、3Ph-TrH/PS、PS薄膜上结晶的AFM形貌图

Figure 3. (a~c) AFM morphology of 3Ph-TrH, 3Ph-TrH/PS, and PS films on SiO2/Si substrates; (d~f) AFM morphology of pentacene crystallized on 3Ph-TrH, 3Ph-TrH/PS, and PS films

图4. (a)器件结构图; (b)并五苯和3Ph-TrH的能级图; 基于3Ph-TrH器件: (c)电子和空穴存储窗口、空穴捕获模式下(d)维持时间测试、(e)读写擦循环测试; 基于3Ph-TrH/PS器件: (f)电子和空穴存储窗口、空穴捕获模式下(g)维持时间测试、(h)读写擦循环测试

Figure 4. (a) Device structure diagram; (b) energy level diagram of pentacene and 3Ph-TrH; for the device based on 3Ph-TrH: (c) electron and hole storage windows; (d) retention time and (e) WRER cycles test in the hole trapping mode; for the device based on 3Ph-TrH/PS: (f) electron and hole storage windows; (g) retention time and (h) WRER cycles test in the hole trapping mode

图5. 器件机理图: (a)黑暗条件下俘获空穴; (b)光照条件下俘获电子

Figure 5. Schematic illustrations of operational mechanisms in (a) holes trapping in dark; (b) electrons trapping under lighting conditions

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基于H型芴基小分子的双极性有机场效应晶体管存储器

Ambipolar Organic Field Effect Transistor Memory Based on H-Type Fluorene-Based Small Molecule

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