化学学报 ›› 2004, Vol. 62 ›› Issue (13): 1217-1221. 上一篇    下一篇

研究论文

分子导体θ-(ET)(C7H7SO3)·3H2O的合成、结构和导电性

陈红余1, 方奇1,2, 许文1, 薛刚1, 于文涛1, 徐翠英2, 张金彪2, 张德清2   

  1. 1. 山东大学晶体材料国家重点实验室, 济南, 250100;
    2. 中国科学院化学研究所, 北京, 100080
  • 投稿日期:2003-12-24 修回日期:2004-02-25 发布日期:2014-02-17
  • 通讯作者: 方奇,Email:fangqi@icm.sdu.edu.cn E-mail:fangqi@icm.sdu.edu.cn
  • 基金资助:
    国家自然科学基金(No.20172034)、中国科学院有机固体开放实验室开放课题资助项目.

Synthesis, Structure and Conductivity of Molecular Conductor θ-(ET)(C7H7SO3)·3H2O

CHEN Hong-Yu1, FANG Qi1,2, XU Wen1, XUE Gang1, YU Wen-Tao1, XU Cui-Ying2, ZHANG Jin-Biao2, ZHANG De-Qing2   

  1. 1. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100;
    2. Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080
  • Received:2003-12-24 Revised:2004-02-25 Published:2014-02-17

用恒电流电化学结晶的方法合成了一种新的基于电子给体BEDT-TTF(双亚乙基二硫四硫富瓦烯) 的电荷转移盐θ-(ET)(C7H7SO3)·3H2O (ET为BEDT-TTF的简写,C7H7SO3-=对甲苯磺酸根).用四圆X衍射的方法测定了θ-(ET)(C7H7SO3)·3H2O的结构.晶体属于三斜晶系,P-1空间群;a=0.8682(1) nm,b= 1.2027(1) nm,c=2.5890(3) nm,α=87.025(6)°,β=89.117(8)°,γ=69.071(7)°,V=2.5216(5) nm3,R=0.0580.晶体中ET自由基沿a轴方向堆积成柱,相邻两个分子柱中的ET分子平面的夹角为49.30°.在b轴方向存在着分子柱侧向间的S…S近距作用.ET阳离子层与对甲苯磺酸根阴离子层沿c轴方向上交替排列.位于阳离子层与阴离子层之间的许多H2O形成了有利于晶体导电性的二维氢键网络.θ-(ET)(C7H7SO3)·3H2O在(001)晶面上某方向上的室温导电率为0.011 S·cm-1,所测变温电导曲线表明,该晶体在120~278 K温度区间内表现为半导体导电行为,导电激活能Ea=0.316 eV.从278~286 K表现为金属导电性.在276 K附近存在金属-半导体相变.

关键词: ET, 合成, 结构, 导电性

A new ET-based radical salt, θ-(ET)(C7H7SO3)·3H2O (ET=bis(ethylenedithio)tetrathiafulvalene, C7H7SO3-=p-toluenesulfonate anion), has been synthesized by oxidative electrocrystallization.The crystal structure was determined by four-circle X-ray diffraction.The crystal belongs to triclinic system, P-1 space group with the unit cell parameters: a=0.8682(1) nm, b=1.2027(1) nm, c=2.5890(3) nm, α=87.025(6)°, β=89.117(8)°, γ=69.071(7)°, V=2.5216(5) nm3, R=0.0570.In the title crystal, the ET radicals are stacked to form columns along the a-axis and there is 49.30° dihedral angle between adjacent ET molecular planes.The inter-stack side-by-side S...S short contacts along the b-axis help to form a kind of cationic conducting sheet parallel to (001) plane.Layers of ET cations and layers of C7H7SO3- counter anions alternate to arrange along the c-direction.The H2O molecules between the cationic sheet and the anionic sheet result in strong H-bond net which is beneficial to electrical conductivity.The room temperature conductivity at a certain direction on (001) plane of θ-(ET)(C7H7SO3)·3H2O crystal was measured to be 0.011 S·cm-1.From 120 to 278 K, the resistivity-temperature curve demonstrates its semiconductor behavior, with an activation energy of 0.316 eV.However, with a metal-semiconductor phase transition around 276 K, it exhibits metallic conductivity from 278 to 286 K.

Key words: ET, synthesis, structure, conductivity