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化学学报
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化学学报 ›› 1993, Vol. 51 ›› Issue (8): 743-747. 上一篇    下一篇

研究论文

长链香豆素LB膜对n-Si/Ni液结上的光致电荷转移的影响

邓薰南;范钦柏;印建华;梁培辉;张伟清   

  1. 上海科学技术大学电化学研究室;中国科学院上海光学精密机械研究所
  • 发布日期:1993-08-15

The effect of long-chain coumarin films on the electron transfer at the liquid junction on n-Si/Ni

DENG XUNNAN;FAN QINBAI;YIN JIANHUA;LIANG PEIHUI;ZHANG WEI1ING   

  • Published:1993-08-15

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本文研究了由硬脂酸香豆素制得的LB膜对n-Si/Ni电极性能的修饰作用.该LB膜沉积方式是Z型的,成膜之后吸收蓝移(由343nm移至325nm).在60mW·cm^-2溴钨灯光照下,n-Si/Ni/3LB/Fe(CN) /Pt电池的光电转换效率增大了一倍,稳定性亦有明显改善.交流阻抗测量表明,光照使n-Si/Ni/3LB电极的电解电阻大大减小,实验结果表明,硬脂酸香豆素LB膜对n-Si/Ni电极上的光致电荷传递过程的修饰作用是良好的.

关键词: 硅, 镍, 香豆素 P, 电沉积, 化学修饰电极, 硬脂酸 P, 电荷转移, 半导体电极, Ｌ-Ｂ膜, 电化学性质

The modification of stearic acid-coumarin Langmuir-Blodgett (LB) films prepared from a coumarin derivative and stearyl chloride on the performance of n-Si/Ni electrode was studied. The deposition of the LB film was Z-type. There was a shift of absorption peak (from 343 nm to 325 nm) after the film was perpared on a glass plate. Under the illumination of 60 m W.cm-2 bromine-tungsten lamp light, the energy conversion efficiency of n-Si/Ni/3LB/Fe(CN)63-/4-/Pt cell has been increased by 100% and the stability was apparently enhanced. The a.c. impedance measurement has shown that the charge transfer resistance of n-Si/Ni/3LB electrode decreased greatly under the irradiation The research results indicates that the modification of stearic acid-coumarin LB films on the photoelectron transfer process on n-Si/Ni electrode is good.

Key words: SILICON, NICKEL, COUMARIN P, ELECTRO-DEPOSITION, CHEMICAL MODIFIED ELECTRODE, STEARIC ACID P, CHARGE TRANSFER, SEMICONDUCTOR ELECTRODE, L-B MEMBRANE, FUEL CELL

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