化学学报 ›› 2010, Vol. 68 ›› Issue (20): 2077-2085. 上一篇    下一篇

研究论文

Ti, V, Nb掺杂MgH2储氢体系的放氢性能及微观机理

张健*,1,黄雅妮2,毛聪1,龙春光1,邵毅敏1付俊庆1,彭平2   

  1. (1长沙理工大学汽车与机械工程学院 长沙 410114)
    (2湖南大学材料科学与工程学院 长沙 410082)
  • 投稿日期:2010-05-02 修回日期:2010-06-18 发布日期:2010-07-13
  • 通讯作者: 张健 E-mail:zj4343@163.com
  • 基金资助:

    镁基氢化物吸放氢性能的第一性原理及实验研究

Dehydrogenation Properties and Micromechanisms of MgH2 Hydrogen Storage Systems with Ti, V or Nb Doping

Zhang Jian*,1 Huang Yani2 Mao Cong1 Long Chunguang1 Shao Yimin1 Fu Junqing1 Peng Ping2   

  1. (1 Institute of Automobile and Mechanical Engineering, Changsha University of Science and Technology, Changsha 410114)
    (2 College of Materials Science and Engineering, Hunan University, Changsha 410082)
  • Received:2010-05-02 Revised:2010-06-18 Published:2010-07-13
  • Contact: Jian ZHANG E-mail:zj4343@163.com

采用基于密度泛函理论的赝势平面波方法, 计算了过渡金属元素Ti, V, Nb掺杂MgH2储氢体系的几何构型、能量与电子结构. 结果显示: Ti, V, Nb掺杂原子较Mg表现出更强的“亲氢性”, 掺杂原子在吸引周围H原子同时却削弱了体系中的H—Mg键强|掺杂体系相结构稳定性降低, 放氢性能提高, 且体系放氢能力按MgH2-Ti, MgH2-V, MgH2-Nb顺序依次增强|放氢过程中, 掺杂原子与周围H原子所形成的氢化物团簇对改善体系放氢性能表现出主要的催化活性|掺杂元素改善MgH2体系放氢性能的微观机理在于掺杂体系在费米能级附近能隙的变窄、低能级区成键电子数的减少以及H—Mg间相互作用的减弱.

关键词: MgH2, 赝势平面波, 放氢性能, 电子结构

Using the pseudopotential plane-wave method based on density functional theory, the geometrical configuration, energetics and electronic structures of MgH2 hydrogen storage systems with transition metals Ti, V or Nb doping have been calculated. The doping atom of Ti, V or Nb exhibits more notable affinity with hydrogen as compared with Mg atom. The bonding strength of Mg—H is weakened when the doping atom pulls nearby hydrogen atoms toward itself. Due to the doping of Ti, V or Nb, the structural stabilities of MgH2 systems are decreased and their dehydrogenation properties are improved, as well as, the dehydrogenation abilities of doped systems are increased gradually in order of MgH2-Ti, MgH2-V and MgH2-Nb systems. The clusters of hydrides formed from doping atoms and hydrogen play significant catalytic role in improving the dehydrogenation properties of MgH2 systems. The micromechanisms of improved properties lie in the narrowing of the energy gap near Fermi energy level, the decreasing of bonding electrons number as well as the weakening of H—Mg interactions in doped systems.

Key words: MgH2, pseudopotential plane-wave, dehydrogenation property, electronic structure