基于吸收互补有机半导体本体复合薄膜的高性能柔性光突触晶体管

doi:10.6023/A22030096

摘要/Abstract

采用光吸收互补的聚(3-己基噻吩)(P3HT)和引达省并二噻吩-苯并噻二唑共聚物(PIDT-BT), 通过溶液法制备了两者的本体复合异质结构有机半导体薄膜, 并研究了薄膜的表面结构和光电性质. 将PIDT-BT:P3HT复合薄膜作为一类新型光敏沟道层, 与聚电解质介电材料相结合, 制备了高性能柔性低电压光突触晶体管. 考察了不同光刺激条件对光突触晶体管性能的影响及半导体机制, 发现PIDT-BT:P3HT器件具有明显光突触特性, 并且相较于单纯PIDT-BT或P3HT器件具有更高响应的兴奋性突触后电流. 基于PIDT-BT:P3HT薄膜的光突触器件, 在绿红双色光刺激下的响应大于两种单色光分别刺激的响应之和, 表明附加光刺激可调控器件的记忆效率. 该研究为发展高性能光响应半导体薄膜及柔性低功耗光突触器件提供了新策略.

关键词: 有机半导体, 薄膜晶体管, 光突触器件, 柔性电子, 低电压

Photonic synapse transistors have attracted growing attention due to their salient advantages in information transmission/processing and good potentials for analog neural computing. Currently, most synapse transistors are rigid devices with the limitations in flexible and highly photosensitive semiconductor channel layers. To achieve high-performance flexible photonic synapse transistors, it is essential to develop stimuli-responsive organic semiconductor thin-films to broaden the photo-response range of devices and accelerate separation of photoinduced carriers for improving synaptic performances. Here, poly(3-hexylthiophene) (P3HT) and poly(indacenodithiophene-co-benzothiadiazole) (PIDT-BT) materials with complementary optical absorption have been used to fabricate a bulk composite film of organic semiconductor heterostructures by a solution-processing method. The surface structures and optoelectronic properties of the PIDT-BT:P3HT film and their single component films are studied. By using the PIDT-BT:P3HT heterostructure film as a novel photoactive channel layer, flexible low-voltage photonic synapse transistors have been designed and fabricated with the combination of polyelectrolyte-based dielectrics. The effects of different optical stimulation conditions on the performance of synapse transistors are investigated with insightful discussion on the semiconductor mechanisms. The flexible synapse transistors based on the PIDT-BT:P3HT film exhibit higher excitatory postsynaptic currents than devices with the single component semiconductor layers at the same optical stimulation. The synaptic response of the PIDT-BT:P3HT-based device is also evaluated under different stimulus variables including the optical spike wavelength, duration and frequency. As results, good synaptic characteristics are observed including the high excitatory postsynaptic current, paired-pulse facilitation, and frequency-dependent properties with the tunable synaptic plasticity. It is found that the response in excitatory postsynaptic current of the synaptic device stimulated by two beams (520 nm green laser and 685 nm red laser) together is greater than the sum of the responses stimulated by each beam alone. These results are useful for the design of high-performance photoresponsive semiconductor films and photonic synapse transistors, which are conducive to the development of low-power flexible optoelectronic devices, artificial synapses and beyond.

Key words: organic semiconductor, thin-film transistor, photonic synapse device, flexible electronics, low-voltage

引用此文

孙嘉贤, 刘禹廷, 尹志刚, 郑庆东. 基于吸收互补有机半导体本体复合薄膜的高性能柔性光突触晶体管[J]. 化学学报, 2022, 80(7): 936-945.

Jiaxian Sun, Yuting Liu, Zhigang Yin, Qingdong Zheng. High-Performance Flexible Photonic Synapse Transistors Based on a Bulk Composite Film of Organic Semiconductors with Complementary Absorption[J]. Acta Chimica Sinica, 2022, 80(7): 936-945.

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图/表 10

图1. (a)生物突触和(b)光突触晶体管的示意图以及(c)有机半导体PIDT-BT与P3HT的分子结构式

Figure 1. Schematic diagrams of (a) biological synapses and (b) photonic synapse transistors, as well as (c) molecule structures of PIDT-BT and P3HT

图2. 三种有机半导体薄膜PIDT-BT (a, d)、PIDT-BT:P3HT (b, e)和P3HT (c, f)的AFM分析: (a~c)高度图和(d~f)粘度图

Figure 2. AFM analysis for (a~c) height images and (d~f) adhesion images of three organic semiconductor films including PIDT-BT (a, d), PIDT-BT:P3HT (b, e), and P3HT (c, f)

图3. 三种有机半导体薄膜的紫外-可见吸收光谱

Figure 3. UV-Vis absorption spectra of three organic semiconductor films

图4. 基于三种有机半导体薄膜的柔性光突触晶体管在持续100 s激光脉冲下的ΔEPSC响应情况(每次脉冲持续时间400 ms, 脉冲间隔100 ms): (a) PIDT-BT; (b) PIDT-BT:P3HT; (c) P3HT

Figure 4. ΔEPSC response of the flexible photonic synapse transistors based on three organic semiconductor films to the laser pulses of 100 s duration (400 ms per pulse, and pulse interval of 100 ms). (a) PIDT-BT, (b) PIDT-BT:P3HT, and (c) P3HT

图5. (a)光突触晶体管中PIDT-BT:P3HT本体复合沟道薄膜的结构示意图; (b~d)不同光刺激条件下的PIDT-BT:P3HT薄膜半导体能级结构示意图: (b) 685 nm红光; (c) 520 nm绿光; (d) 520 nm与685 nm绿红双色光

Figure 5. (a) Schematic structure diagram of the PIDT-BT:P3HT bulk composite channel film in the photonic synapse transistor. (b~d) Schematic energy level diagrams of the PIDT-BT:P3HT semiconductor layer under different optical stimulation conditions: (b) 685 nm red beam, (c) 520 nm green beam, and (d) the combined 520 nm green beam and 685 nm red beam

图6. 不同光脉冲刺激下基于PIDT-BT:P3HT光突触晶体管的ΔEPSC响应情况: (a)对单个光脉冲的响应(脉冲持续时间700 ms); (b) ΔEPSCmax与光脉冲持续时间的关系图

Figure 6. ΔEPSC response of the PIDT-BT:P3HT photonic synapse transistor under different light pulses. (a) Response to a single optical pulse (pulse duration of 700 ms), and (b) relationship between the ΔEPSCmax and the duration of light pulse

图7. 不同光脉冲刺激下基于PIDT-BT:P3HT光突触晶体管的ΔEPSC响应情况: (a)对连续两个光脉冲的响应(脉冲持续时间400 ms, 脉冲间隔400 ms); (b) PPF index与Δt的关系图

Figure 7. (a) ΔEPSC response of the PIDT-BT:P3HT photonic synapse transistor under different light pulses. (a) Response to two consecutive optical pulses (pulse duration of 400 ms, and pulse interval of 400 ms), and (b) relationship between the PPF index and Δt

Optical stimulus	τ₁/ms	τ₂/ms
520 nm laser	446	5546
685 nm laser	187	2195
520 nm and 685 nm laser	477	3349

表1. 基于PIDT-BT:P3HT光突触晶体管在不同光刺激条件下的特征迟豫时间拟合结果总结

Table 1. Summary of the fitting results for characteristic relaxation time of the PIDT-BT:P3HT photonic synapse transistor under optical stimulus with different light sources

图8. (a)不同光刺激下由光脉冲数量导致PIDT-BT:P3HT光突触晶体管器件的短程记忆至长程记忆转变; (b) ΔG与τdecay随光脉冲数量变化的关系图(脉冲持续时间400 ms, 脉冲间隔400 ms)

Figure 8. (a) Transition from short-time memory to long-time memory of the PIDT-BT:P3HT photonic synapse transistor under different light pulses with the change in pulse numbers; (b) ΔG and τdecay as a function of the optical pulse number (pulse duration of 400 ms, and pulse interval of 400 ms)

图9. 不同施加电压下PIDT-BT:P3HT光突触晶体管对绿红双色光共同刺激(脉冲持续时间400 ms, 脉冲间隔400 ms)的ΔEPSC响应情况: (a)改变栅极电压的响应; (b) ΔEPSCmax与栅极电压的关系图; (c)改变源漏电压的响应; (d) ΔEPSCmax与源漏电压的关系图

Figure 9. ΔEPSC response of the PIDT-BT:P3HT photonic synapse transistor stimulated by the combined green and red beams (pulse duration of 400 ms, and pulse interval of 400 ms) at different applied voltages. (a) Response to the change in gate voltages; (b) relationship between the ΔEPSCmax and VG; (c) response to the change in source-drain voltages; (d) relationship between the ΔEPSCmax and VD

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