A new BEDT-TTF-based cation radical salt, α'-(BEDT-TTF)_2C_6H_4 (SO_3)_2 [BEDT-TTF = bis-(ethylenedithio) tetrathiafulvalene, C_6H_4 (SO_3)_2~(2-) = p-disulfonate benzene], has been prepared by oxidative electrocrystallization at a constant current of 1.5 μA. The single crystal structure was determined by four-circle X-ray diffraction method. The crystal belongs to monoclinic system, P2/n space group with the unit cell parameters of a = 0.77937 (17) nm, b = 0.66989(11) nm, c = 3.4422(7) nm, β = 91.135(12)°, V = 1.7968(6) nm~3. In the crystal of the title compound, the BEDT-TTF cation radicals are stacked to form staggered columns of dimerised BEDT-TTF units along the a-axis and arranged side-by-side to form one-dimensional uniform chains along the b-axis. Counter ions are also arranged to form strong interactions along a-axis. Layers of BEDT-TTF cationic radicals and C_6H_4(SO_3)_2~(2-) counter anions alternate to form separate structure along the c-direction. The room temperature conductivity of a'-(BEDT-TTF)_2C_6H_4(SO_3)_2 was measured to be 0.5913 Ω~(-1)·m~(-1) . The resistivity-temperature curve demonstrates that it is a typical semiconductor. A certain transition took place around 150 K.

Key words: BEDT-TIF, BENZENEDISULFONIC ACID P, ELECTRICAL CONDUCTIVITY, CHARGE TRANSFER, CRYSTAL STRUCTURE, XRD