The modification of Ni, Pb and LB films on the behavior of n-Si photoelectrode

Acta Chimica Sinica ›› 1993, Vol. 51 ›› Issue (5): 432-437. Previous Articles Next Articles

Original Articles

镍、铅、LB膜对n-Si光电极的修饰

邓薰南;印建华;范钦柏;沈增德;梁培辉;张伟清

上海科学技术大学电化学研究室;中国科学院上海光学精密机械研究所

发布日期:1993-05-15

The modification of Ni, Pb and LB films on the behavior of n-Si photoelectrode

DENG XUNNAN;YIN JIANHUA;FAN QINBAI;SHEN ZENGDE;LIANG PEIHUI;ZHANG WEI1ING

Published:1993-05-15

Abstract

The effects of metal (Ni or Pb) and Langmuir-Blodgett (LB) films on the photoelectrochem. behavior of n-Si were studied. Ni and Pb can improve the energy conversion efficiency and the stability of n-Si. The modification of n-Si/Ni by LB films prepared with eight different organic compounds was determine and discussed; the efficiency of the photoelectrode was doubled by the best compound (long-chain coumarin LB film). The photoelectrochem. properties of Si/LB/Al electrode having the MIS structure were also studied.

Key words: ELECTRODE, SILICON, NICKEL, LEAD, CHEMICAL MODIFIED ELECTRODE, PHOTO-ELECTROCHEMISTRY, L-B MEMBRANE

CLC Number:

O646

Cite this article

DENG XUNNAN;YIN JIANHUA;FAN QINBAI;SHEN ZENGDE;LIANG PEIHUI;ZHANG WEI1ING. The modification of Ni, Pb and LB films on the behavior of n-Si photoelectrode[J]. Acta Chimica Sinica, 1993, 51(5): 432-437.

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镍、铅、LB膜对n-Si光电极的修饰

The modification of Ni, Pb and LB films on the behavior of n-Si photoelectrode

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