Recent Progress in Ambipolar Organic Field-Effect Transistors Based on Organic Semiconductor Bilayer

doi:10.6023/cjoc202107016

Abstract

Complementary circuits made of ambipolar organic field-effect transistors (OFETs) have the advantages of low signal to noise ratio, low operation voltage, low power consumption, and so on. Up to now, only a few ambipolar organic semiconductors with balanced hole and electron mobilities have been reported, which is one of the key requirements for high performance complementary circuits. There are thousands of high performance unipolar organic semiconductors. The conducting channels based on both an n-type and a p-type organic semiconductors, which have matched mobilities, will be an effective way to build a high performance ambipolar OFETs. In this review, the key requirements, the electrical properties, and factors correlating with the performance of ambipolar OFETs based on organic bilayer are reported.

Key words: organic field-effect transistors (OFETs), ambipolar, organic bilayer, balanced, mobility

Cite this article

Min Li, Aifeng Lv. Recent Progress in Ambipolar Organic Field-Effect Transistors Based on Organic Semiconductor Bilayer[J]. Chinese Journal of Organic Chemistry, 2022, 42(1): 54-66.

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Fig. & Tab. 12

Figure 1. Charge carrier transport of ambipolar transistors based on organic bilayer (a) n-Type charge transport and (b) p-type transport. (–) represents the movement of electrons and (+) represents the movement of holes

OSC	μ_h/(cm²•V^–1•s^–1)	μ_e/(cm²•V^–1•s^–1)	HOMO/eV	LUMO/eV
1A/1B^[6]	0.004	0.005	—/–7.1	—/-3.8
1D/1C^[12]	2.96×10^–3	9.49×10^–3	-6.1/-5.95	–4.9/–4.35
1A/1E^[20]	0.0035	0.0095	—/–6.7	—/–4.3
1F/1D^[19a]	23.7	0.06	–5.4/–6.1	–2.4/–4.7
1B/1H^[18]	0.2	0.04	–7.1/–5.0	–3.8/–3.0
1G/1D^[7a]	0.12	3×10^–2	—/–6.1	—/–4.9
1D/1C^[9c]	10^–6	10^–6	–6.1/–5.2	–4.9/–3.5
1H/1I^[13,21]	0.41	0.40	–5.0/–5.4	–3.0/–3.4
1C/1J^[10]	1.8×10^–4	2.1×10^–4	–5.2/–5.3	–3.5/–4.0
1H/1K^[15]	0.34	0.03	-5.0/–6.5	–3.0/–4.0
1L/1M^[16]	5.0×10^–2	1.6×10^–2	–5.3/–4.8	-3.2/–2.8
1N/1O^[17]	1.7×10^–2	2.2×10^–2	—/–7.24	—/–3.61
1P/1Q^[14]	0.87	0.82	–5.75/–5.60	–4.15/–2.60

Table 1. Summary of hole/electron mobility, HOMO, and LUMO obtained from ambipolar OFETs based on organic-organic bilayer

Figure 2. Molecular structures of OSCs applied in the ambipolar OFETs based on organic-organic bilayer

Figure 3. AFM morphology of (a) an F16CuPc (5 nm)/CuPc (10 nm) organic bilayer, (b) a CuPc (5 nm)/F16CuPc (15 nm) organic bilayer, respectively

Figure 4. AFM images of BP2T films with different thicknesses (a) 0.5 nm, (b) 1 nm, (c) 2 nm, (d) 3 nm, (e) 5 nm, (f) 6 nm, (g) 20 nm, (h) 30 nm (all images are 4 μm×4 μm)[7a]

OSC	μ_h/(cm²•V^–1•s^–1)	I_on/off(hole)	μ_e/(cm²•V^–1•s^–1)	I_{on/off(electron)}	HOMO/eV	Conducting band/eV
ZnO/1H^[26]	0.34	10³	0.38	10⁴	–5.0	–4.4
ZnInO_x/1H^[28]	0.14	—	13.8	—	–5.0	—
InO_x/1H^[29]	1.1	—	0.1	—	–5.0	—
MoS₂/2A^[31]	0.36	10³	1.27	10³	–5.36	–4.0
ZnO/2B^[32]	2.4	10³	4.5	10³	—	–4.4
IGZOs/2C^[33]	4.5	—	5.1	—	–5.3	–4.3
IGZOs/1F^[33]	2.8	—	5.1	—	–5.1	–4.3
ZnO/1N^[34]	5.1×10^–2	—	1.2×10^–2	—	–5.1	–4.3
IGO/1N^[1B]	1.09	10²	1.80	10³	—	—
InO/2D^[35]	1.1	3.8×10²	1.5	1.2×10²	–5.36	—

Table 2. Summary of μh, μe, Ion/off, HOMO, conducting band obtained from ambipolar OFETs based on organic-organic bilayer

Figure 5. Molecular structures of OSCs applied in the ambipolar OFETs based on organic-inorganic bilayer and parallel conducting channel

Figure 6. Supply voltages at 50 V (a) and –60 V (b) based on C8-BTBT/a-IGZO inverters Inset is schematic of the inverter circui

Figure 7. Device structure of ambipolar OFETs with parallel p and n conducting channel: (a) front view and (b) side view

Figure 8. Molecular structures of OSCs applied in the ambipolar OFETs based on p/n organic blends

Figure 9. (a) Molecular structure of P(VDF-TrFE) and (b) schematic diagram of the energy levels at the OSCs-dielectric interface

Figure 10. Four device structures of ambipolar OFETs based on organic bilayers: (a) top-contact, (b) bottom-contact, (c) middle-contact and (d) dual-gate type

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