化学学报 ›› 2022, Vol. 80 ›› Issue (5): 581-589.DOI: 10.6023/A21120622 上一篇    下一篇

研究论文

表面双重后处理方法提升三元NiMgO半导体界面层及其有机太阳能电池的性能

何新蕊a,b, 蔡丽娜a,b, 陈汉生b, 尹攀b, 尹志刚b,c,*(), 郑庆东b,*()   

  1. a 福州大学化学学院 福州 350108
    b 中国科学院福建物质结构研究所 结构化学国家重点实验室 福州 350002
    c 中国福建光电信息科学与技术创新实验室 福州 350108
  • 投稿日期:2021-12-31 发布日期:2022-05-31
  • 通讯作者: 尹志刚, 郑庆东
  • 作者简介:
    庆祝中国科学院青年创新促进会十年华诞.
  • 基金资助:
    福建省杰出青年科学基金(2019J06023); 国家自然科学基金(52130306); 国家自然科学基金(52173241); 中国福建光电信息科学与技术创新实验室(闽都创新实验室)主任基金(2021ZR116)

A Dual Post-Treatment Method for Improving the Performance of Ternary NiMgO Semiconductor Interfacial Layers and Their Organic Solar Cells

Xinrui Hea,b, Lina Caia,b, Hansheng Chenb, Pan Yinb, Zhigang Yinb,c(), Qingdong Zhengb()   

  1. a College of Chemistry, Fuzhou University, Fuzhou 350108
    b State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002
    c Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108
  • Received:2021-12-31 Published:2022-05-31
  • Contact: Zhigang Yin, Qingdong Zheng
  • About author:
    Dedicated to the 10th anniversary of the Youth Innovation Promotion Association, CAS.
  • Supported by:
    Natural Science Foundation of Fujian Province for Distinguished Young Scholars(2019J06023); National Natural Science Foundation of China(52130306); National Natural Science Foundation of China(52173241); Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China(2021ZR116)

采用溶胶-凝胶法制备了Mg掺杂氧化镍(NiO)的三元氧化物半导体NiMgO薄膜, 研究了不同表面后处理方法对薄膜结构、性质和能级的影响. 利用NiMgO薄膜作为新型空穴传输界面层构建了非富勒烯有机太阳能电池, 研究了器件性能变化及其物理机制. 结果表明, 以未表面处理NiMgO为界面层时, 器件的能量转化效率(PCE)为5.90%; 使用紫外-臭氧(UVO)表面后处理的NiMgO界面层, 器件PCE大幅提升至12.67%. 而NiMgO在UVO处理前进行润洗, 可以去除表面残留物, 薄膜变平整且透光率增加. 因此, 采用润洗与UVO结合的表面双重后处理新策略后, 器件的开路电压不变, 但短路电流密度和填充因子分别提高到23.48 mA•cm–2和64.29%, 最终PCE达到13.17%. 该研究为半导体氧化物薄膜及器件的优化提供了一条有效途径.

关键词: 有机光伏, 三元氧化物, 空穴传输层, 表面处理, 界面工程

Organic solar cells (OSCs) are among the most promising photovoltaic technologies to solve energy and environmental problems. To achieve highly efficient OSCs, controlling over electrode interfacial layers is greatly important for improving charge transportation and collection. Here, ternary metal oxide semiconductor films of Mg-doped NiO (NiMgO) have been prepared via a sol-gel method, and further optimized by several post-treatment strategies. The structures, properties and energy levels of different NiMgO films have been investigated to explore the influence of various post-treatment strategies. Incorporating the ternary NiMgO films as a novel type of hole transport layers (HTLs), non-fullerene OSCs have been fabricated based on a promising bulk-heterojunction of PM6:M36. Their photovoltaic performances and mechanisms of device physics are also investigated. When the sol-gel derived NiMgO film without post-treatment is used as an HTL, the OSCs show a relatively low power conversion efficiency (PCE) of 5.90%. By contrast, after simple ultraviolet-ozone (UVO) post-treatment on the NiMgO HTL, the resulted OSCs exhibit greatly enhanced photovoltaic performances, with an increased open-circuit voltage (VOC) of 0.87 V and an improved PCE of 12.67%. More importantly, a new dual post-treatment combining surface rinse with UVO treatment has been demonstrated to further optimize NiMgO HTLs and improve device performances. The rinse process can remove excess impurities and flatten the surface of NiMgO films as well as increase the transmittance, while the UVO treatment process is beneficial for reducing surface defects of the ternary oxide films. Benefit-ing from such an efficient dual post-treatment on NiMgO HTLs, the OSCs afford a high PCE of 13.17% with a retained VOC of 0.87 V, an increased short-circuit current density of 23.48 mA•cm–2, and an improved fill factor of 64.29%. These results provide an effective way for surface post-treatment and property optimization of semiconducting metal oxide films, and contribute to the development of high-performance optoelectronic devices.

Key words: organic photovoltaic, ternary oxide, hole transport layer, surface treatment, interface engineering