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化学学报
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化学学报 ›› 2003, Vol. 61 ›› Issue (9): 1430-1433. 上一篇    下一篇

研究论文

钇对掺饵多孔硅体系1.54μm发光的增强作用

张晓霞;谢国伟;石建新;罗莉;黄伟国;龚孟濂   

  1. 中山大学化学与化学工程学院;香港浸会大学物理系;香港浸会大学化学系
  • 发布日期:2003-09-15

Emhanced 1.54 μm Luminescence from Erbium and Yttrium Co-doped Porous Silicon

Zhang Xiaoxia;Cheah Kok-Wai;Shi Jianxin;Luo Li;Wong Kai- Kwok;Gong Menglian   

  1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University;Department of Chemistry, Hong Kong Baptist University;Department of Physics, Hong Kong Baptist University
  • Published:2003-09-15

PDF

481

被引次数

14

首次报道了用恒电位电解法将饵、钇共掺入多孔硅（porous silicons, PS） 中，经高温退火处理后，观察到了在近红外区（1.54 μm）室温下较强的光致发光 （photoluminescence, PL），并与掺饵多孔硅（erbium-doped porous silicon, PS:Er）做了比较，发现钇的共掺入对掺饵多孔硅体系1.54 μm发射起了增强作用 。研究了饵、钇共掺杂多孔硅（erbium and yttrium co-doped porous silicon, PS:Er, Y）光致发光强度随温度的变化，发现PS:Er与Si:Er材料相似，有较强的 温度猝灭效应，而PS:Er，Y体系的PL强度随温度升高趋于平稳，且有增强的趋势， 受温度影响不明显，并初步探讨了其发光机制。

关键词: 硅, 铒, 钇, 掺杂, 光致发光, 电解, 荧光猝灭剂

Fabrication of erbium (Er) and yttrium (Y) co-doped porous silicon (PS:Er,Y) is firstly reported. Enhancement of Er-related photoluminescence at 1.54 μm has been achieved by the co-doping of Y~ (3+) . The dependence of photoluminescence intensity on temperature was investigated. Luminescence quenching was observed for PS：Er, similar to that for Si:Er, while 1.54 μm luminescence intensity from PS:Er,Y was found to increase a little when the photoluminescence spectra were measured at a higher temperature. A possible enhanced photoluminescence mechanism was proposed.

Key words: SILICON, SILICON, YTTRIUM, DOPE, PHOTOLUMINESCENCE, ELECTROLYSIS, FLUORESCENCE QUENCHER

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